DE69228585T2 - Herstellung einer lithographischen Maske mit Phasensprung - Google Patents

Herstellung einer lithographischen Maske mit Phasensprung

Info

Publication number
DE69228585T2
DE69228585T2 DE69228585T DE69228585T DE69228585T2 DE 69228585 T2 DE69228585 T2 DE 69228585T2 DE 69228585 T DE69228585 T DE 69228585T DE 69228585 T DE69228585 T DE 69228585T DE 69228585 T2 DE69228585 T2 DE 69228585T2
Authority
DE
Germany
Prior art keywords
production
phase shift
lithographic mask
lithographic
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69228585T
Other languages
English (en)
Other versions
DE69228585D1 (de
Inventor
Joseph Gerard Garofalo
Robert Louis Kostelak
Christophe Pierrat
Sheila Vaidya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69228585D1 publication Critical patent/DE69228585D1/de
Application granted granted Critical
Publication of DE69228585T2 publication Critical patent/DE69228585T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69228585T 1991-11-22 1992-11-12 Herstellung einer lithographischen Maske mit Phasensprung Expired - Fee Related DE69228585T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79749591A 1991-11-22 1991-11-22

Publications (2)

Publication Number Publication Date
DE69228585D1 DE69228585D1 (de) 1999-04-15
DE69228585T2 true DE69228585T2 (de) 1999-08-19

Family

ID=25170988

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69228585T Expired - Fee Related DE69228585T2 (de) 1991-11-22 1992-11-12 Herstellung einer lithographischen Maske mit Phasensprung

Country Status (5)

Country Link
US (1) US5338626A (de)
EP (1) EP0543569B1 (de)
JP (1) JPH05232684A (de)
DE (1) DE69228585T2 (de)
SG (1) SG50543A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5380609A (en) * 1992-07-30 1995-01-10 Dai Nippon Printing Co., Ltd. Method for fabricating photomasks having a phase shift layer comprising the use of a positive to negative resist, substrate imaging and heating
US5718829A (en) * 1995-09-01 1998-02-17 Micron Technology, Inc. Phase shift structure and method of fabrication
US5741624A (en) * 1996-02-13 1998-04-21 Micron Technology, Inc. Method for reducing photolithographic steps in a semiconductor interconnect process
US6114082A (en) * 1996-09-16 2000-09-05 International Business Machines Corporation Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same
US5780187A (en) * 1997-02-26 1998-07-14 Micron Technology, Inc. Repair of reflective photomask used in semiconductor process
US5935734A (en) * 1997-03-03 1999-08-10 Micron Technology, Inc. Method for fabrication of and apparatus for use as a semiconductor photomask
JP3474740B2 (ja) * 1997-03-25 2003-12-08 株式会社東芝 フォトマスクの設計方法
US5861330A (en) 1997-05-07 1999-01-19 International Business Machines Corporation Method and structure to reduce latch-up using edge implants
US6185473B1 (en) * 1998-01-08 2001-02-06 Micron Technology, Inc. Optical pattern transfer tool
US6110624A (en) * 1999-01-04 2000-08-29 International Business Machines Corporation Multiple polarity mask exposure method
EP1143300A1 (de) * 2000-04-03 2001-10-10 Shipley Company LLC Photoresistzusammensetzungen und ihre Verwendung
EP1866688B1 (de) * 2005-03-31 2009-03-25 PGT Photonics S.p.A. Verfahren zur herstellung eines umlenkspiegels in optischen wellenleiterbauelementen
CN102096334B (zh) * 2010-12-22 2012-08-08 中国科学院光电技术研究所 一种基于移相原理提高分辨率的超衍射成像器件及其制作方法
CN104485312A (zh) * 2014-12-30 2015-04-01 华天科技（西安）有限公司 一种改善muf工艺基板外围溢料的基板及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE290670C (de) *
DE3712335A1 (de) * 1987-04-11 1988-10-20 Vdo Schindling Verfahren zur herstellung einer struktur
US4948706A (en) * 1987-12-30 1990-08-14 Hoya Corporation Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material
JPH03228053A (ja) * 1990-02-01 1991-10-09 Fujitsu Ltd 光露光レチクル

Also Published As

Publication number Publication date
SG50543A1 (en) 1998-07-20
US5338626A (en) 1994-08-16
EP0543569A1 (de) 1993-05-26
EP0543569B1 (de) 1999-03-10
DE69228585D1 (de) 1999-04-15
JPH05232684A (ja) 1993-09-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee