JPS565981A - Production of lithgraphy mask - Google Patents

Production of lithgraphy mask

Info

Publication number
JPS565981A
JPS565981A JP8597580A JP8597580A JPS565981A JP S565981 A JPS565981 A JP S565981A JP 8597580 A JP8597580 A JP 8597580A JP 8597580 A JP8597580 A JP 8597580A JP S565981 A JPS565981 A JP S565981A
Authority
JP
Japan
Prior art keywords
lithgraphy
mask
production
lithgraphy mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8597580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6330990B2 (en, 2012
Inventor
Deriku Batsukuree Uiriamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Biosystems Inc
Original Assignee
Perkin Elmer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Perkin Elmer Corp filed Critical Perkin Elmer Corp
Publication of JPS565981A publication Critical patent/JPS565981A/ja
Publication of JPS6330990B2 publication Critical patent/JPS6330990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0002—Apparatus or processes for manufacturing printed circuits for manufacturing artworks for printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP8597580A 1979-06-26 1980-06-26 Production of lithgraphy mask Granted JPS565981A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/052,292 US4293624A (en) 1979-06-26 1979-06-26 Method for making a mask useful in X-ray lithography

Publications (2)

Publication Number Publication Date
JPS565981A true JPS565981A (en) 1981-01-22
JPS6330990B2 JPS6330990B2 (en, 2012) 1988-06-21

Family

ID=21976648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8597580A Granted JPS565981A (en) 1979-06-26 1980-06-26 Production of lithgraphy mask

Country Status (3)

Country Link
US (1) US4293624A (en, 2012)
JP (1) JPS565981A (en, 2012)
DE (1) DE3019851A1 (en, 2012)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379833A (en) * 1981-12-31 1983-04-12 International Business Machines Corporation Self-aligned photoresist process
US4654295A (en) * 1983-12-05 1987-03-31 Energy Conversion Devices, Inc. Method of making short channel thin film field effect transistor
US4632871A (en) * 1984-02-16 1986-12-30 Varian Associates, Inc. Anodic bonding method and apparatus for X-ray masks
US4677042A (en) * 1984-11-05 1987-06-30 Canon Kabushiki Kaisha Mask structure for lithography, method for preparation thereof and lithographic method
US4964146A (en) * 1985-07-31 1990-10-16 Hitachi, Ltd. Pattern transistor mask and method of using the same
US4687730A (en) * 1985-10-30 1987-08-18 Rca Corporation Lift-off technique for producing metal pattern using single photoresist processing and oblique angle metal deposition
US4711822A (en) * 1986-01-15 1987-12-08 Westinghouse Electric Corp. Metal core printed circuit boards
US4713315A (en) * 1986-12-09 1987-12-15 Smith David V Wire tag etching system
US5118584A (en) * 1990-06-01 1992-06-02 Eastman Kodak Company Method of producing microbump circuits for flip chip mounting
US5356756A (en) 1992-10-26 1994-10-18 The United States Of America As Represented By The Secretary Of Commerce Application of microsubstrates for materials processing
JP3233350B2 (ja) * 1997-04-25 2001-11-26 トヨタ自動車株式会社 積層造形に用いられるマスク、マスクの製造方法及びマスクの使用方法
US6485892B1 (en) * 1999-12-17 2002-11-26 International Business Machines Corporation Method for masking a hole in a substrate during plating
JP3592310B2 (ja) 2001-06-05 2004-11-24 住友電工スチールワイヤー株式会社 マグネシウム基合金ワイヤおよびその製造方法
US20080045706A1 (en) * 2002-12-31 2008-02-21 Flynn Daniel L Anti-inflammatory medicaments
US7704646B2 (en) * 2004-11-08 2010-04-27 Lg Innotek Co., Ltd. Half tone mask and method for fabricating the same
US8163185B1 (en) * 2008-03-31 2012-04-24 Western Digital (Fremont), Llc Method and apparatus for lifting off photoresist beneath an overlayer
WO2012092301A2 (en) * 2010-12-29 2012-07-05 Intevac, Inc. Method and apparatus for masking substrates for deposition
US9141157B2 (en) * 2011-10-13 2015-09-22 Texas Instruments Incorporated Molded power supply system having a thermally insulated component

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1906755A1 (de) * 1969-02-11 1970-09-03 Siemens Ag Verfahren zur Herstellung von Duennschichtstrukturen auf Substraten und nach diesem Verfahren hergestellte Photomaske
US3767398A (en) * 1971-10-26 1973-10-23 C Morgan Solid photoresist comprising a polyene and a polythiol
US4035522A (en) * 1974-07-19 1977-07-12 International Business Machines Corporation X-ray lithography mask
US4018938A (en) * 1975-06-30 1977-04-19 International Business Machines Corporation Fabrication of high aspect ratio masks
US4022927A (en) * 1975-06-30 1977-05-10 International Business Machines Corporation Methods for forming thick self-supporting masks
US4037111A (en) * 1976-06-08 1977-07-19 Bell Telephone Laboratories, Incorporated Mask structures for X-ray lithography
DE2658400A1 (de) * 1976-12-23 1978-06-29 Ibm Deutschland Verfahren zur herstellung einer negativen maske auf einem substrat

Also Published As

Publication number Publication date
DE3019851C2 (en, 2012) 1992-08-20
US4293624A (en) 1981-10-06
DE3019851A1 (de) 1981-01-15
JPS6330990B2 (en, 2012) 1988-06-21

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