JPS6330990B2 - - Google Patents
Info
- Publication number
- JPS6330990B2 JPS6330990B2 JP8597580A JP8597580A JPS6330990B2 JP S6330990 B2 JPS6330990 B2 JP S6330990B2 JP 8597580 A JP8597580 A JP 8597580A JP 8597580 A JP8597580 A JP 8597580A JP S6330990 B2 JPS6330990 B2 JP S6330990B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoresist
- gold
- substrate
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 48
- 229920002120 photoresistant polymer Polymers 0.000 claims description 48
- 239000010408 film Substances 0.000 claims description 40
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 36
- 239000010931 gold Substances 0.000 claims description 36
- 229910052737 gold Inorganic materials 0.000 claims description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 31
- 229910052782 aluminium Inorganic materials 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 15
- 239000006096 absorbing agent Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000001015 X-ray lithography Methods 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000006100 radiation absorber Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 13
- 229920002799 BoPET Polymers 0.000 description 7
- 239000005041 Mylar™ Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 206010067482 No adverse event Diseases 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 241000207439 Myra Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0002—Apparatus or processes for manufacturing printed circuits for manufacturing artworks for printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- ing And Chemical Polishing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/052,292 US4293624A (en) | 1979-06-26 | 1979-06-26 | Method for making a mask useful in X-ray lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS565981A JPS565981A (en) | 1981-01-22 |
| JPS6330990B2 true JPS6330990B2 (en, 2012) | 1988-06-21 |
Family
ID=21976648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8597580A Granted JPS565981A (en) | 1979-06-26 | 1980-06-26 | Production of lithgraphy mask |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4293624A (en, 2012) |
| JP (1) | JPS565981A (en, 2012) |
| DE (1) | DE3019851A1 (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8308878B2 (en) | 2001-06-05 | 2012-11-13 | Sumitomo Electric Industries, Ltd. | Magnesium-based alloy wire and method of its manufacture |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4379833A (en) * | 1981-12-31 | 1983-04-12 | International Business Machines Corporation | Self-aligned photoresist process |
| US4654295A (en) * | 1983-12-05 | 1987-03-31 | Energy Conversion Devices, Inc. | Method of making short channel thin film field effect transistor |
| US4632871A (en) * | 1984-02-16 | 1986-12-30 | Varian Associates, Inc. | Anodic bonding method and apparatus for X-ray masks |
| US4677042A (en) * | 1984-11-05 | 1987-06-30 | Canon Kabushiki Kaisha | Mask structure for lithography, method for preparation thereof and lithographic method |
| US4964146A (en) * | 1985-07-31 | 1990-10-16 | Hitachi, Ltd. | Pattern transistor mask and method of using the same |
| US4687730A (en) * | 1985-10-30 | 1987-08-18 | Rca Corporation | Lift-off technique for producing metal pattern using single photoresist processing and oblique angle metal deposition |
| US4711822A (en) * | 1986-01-15 | 1987-12-08 | Westinghouse Electric Corp. | Metal core printed circuit boards |
| US4713315A (en) * | 1986-12-09 | 1987-12-15 | Smith David V | Wire tag etching system |
| US5118584A (en) * | 1990-06-01 | 1992-06-02 | Eastman Kodak Company | Method of producing microbump circuits for flip chip mounting |
| US5356756A (en) | 1992-10-26 | 1994-10-18 | The United States Of America As Represented By The Secretary Of Commerce | Application of microsubstrates for materials processing |
| JP3233350B2 (ja) * | 1997-04-25 | 2001-11-26 | トヨタ自動車株式会社 | 積層造形に用いられるマスク、マスクの製造方法及びマスクの使用方法 |
| US6485892B1 (en) * | 1999-12-17 | 2002-11-26 | International Business Machines Corporation | Method for masking a hole in a substrate during plating |
| US20080045706A1 (en) * | 2002-12-31 | 2008-02-21 | Flynn Daniel L | Anti-inflammatory medicaments |
| US7704646B2 (en) * | 2004-11-08 | 2010-04-27 | Lg Innotek Co., Ltd. | Half tone mask and method for fabricating the same |
| US8163185B1 (en) * | 2008-03-31 | 2012-04-24 | Western Digital (Fremont), Llc | Method and apparatus for lifting off photoresist beneath an overlayer |
| WO2012092301A2 (en) * | 2010-12-29 | 2012-07-05 | Intevac, Inc. | Method and apparatus for masking substrates for deposition |
| US9141157B2 (en) * | 2011-10-13 | 2015-09-22 | Texas Instruments Incorporated | Molded power supply system having a thermally insulated component |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1906755A1 (de) * | 1969-02-11 | 1970-09-03 | Siemens Ag | Verfahren zur Herstellung von Duennschichtstrukturen auf Substraten und nach diesem Verfahren hergestellte Photomaske |
| US3767398A (en) * | 1971-10-26 | 1973-10-23 | C Morgan | Solid photoresist comprising a polyene and a polythiol |
| US4035522A (en) * | 1974-07-19 | 1977-07-12 | International Business Machines Corporation | X-ray lithography mask |
| US4018938A (en) * | 1975-06-30 | 1977-04-19 | International Business Machines Corporation | Fabrication of high aspect ratio masks |
| US4022927A (en) * | 1975-06-30 | 1977-05-10 | International Business Machines Corporation | Methods for forming thick self-supporting masks |
| US4037111A (en) * | 1976-06-08 | 1977-07-19 | Bell Telephone Laboratories, Incorporated | Mask structures for X-ray lithography |
| DE2658400A1 (de) * | 1976-12-23 | 1978-06-29 | Ibm Deutschland | Verfahren zur herstellung einer negativen maske auf einem substrat |
-
1979
- 1979-06-26 US US06/052,292 patent/US4293624A/en not_active Expired - Lifetime
-
1980
- 1980-05-23 DE DE19803019851 patent/DE3019851A1/de active Granted
- 1980-06-26 JP JP8597580A patent/JPS565981A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8308878B2 (en) | 2001-06-05 | 2012-11-13 | Sumitomo Electric Industries, Ltd. | Magnesium-based alloy wire and method of its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS565981A (en) | 1981-01-22 |
| DE3019851C2 (en, 2012) | 1992-08-20 |
| US4293624A (en) | 1981-10-06 |
| DE3019851A1 (de) | 1981-01-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6330990B2 (en, 2012) | ||
| US6852454B2 (en) | Multi-tiered lithographic template and method of formation and use | |
| US4174219A (en) | Method of making a negative exposure mask | |
| US4632898A (en) | Process for fabricating glass tooling | |
| US4600686A (en) | Method of forming a resist mask resistant to plasma etching | |
| EP0907105B1 (en) | Method for fabricating photomasks having a phase shift layer | |
| US3510371A (en) | Method of making an ultraviolet sensitive template | |
| JPH0562404A (ja) | 磁気ヘツド用スライダーの製造方法 | |
| KR20020033041A (ko) | 포토 마스크의 제조 방법 및 포토 마스크 | |
| JPH06267843A (ja) | パターン形成方法 | |
| EP0119310B1 (en) | Method of fabricating a pellicle cover for projection printing system | |
| JPH06250376A (ja) | 位相シフトマスク及び位相シフトマスクの製造方法 | |
| US6015640A (en) | Mask fabrication process | |
| JP2610402B2 (ja) | 二重露光によるｔ形のゲートの製造方法 | |
| US4612274A (en) | Electron beam/optical hybrid lithographic resist process in acoustic wave devices | |
| KR100258803B1 (ko) | 반도체 소자의 미세 패턴 형성방법 | |
| JPS61204933A (ja) | 半導体装置の製造方法 | |
| Shimkunas et al. | Mask technology for x-ray step-and-repeat system | |
| JPS59128540A (ja) | フオトマスク | |
| JPH03104113A (ja) | レジストパターンの形成方法 | |
| JP3222531B2 (ja) | 位相シフト層を有するフォトマスクの製造方法 | |
| JPS6114721A (ja) | マスク作製方法 | |
| JPS6156317B2 (en, 2012) | ||
| JPH0316116A (ja) | Ｘ線リソグラフィー用マスク構造体及びそれを用いたｘ線露光方法 | |
| JPH02156244A (ja) | パターン形成方法 |