DE3046856C2 - - Google Patents
Info
- Publication number
- DE3046856C2 DE3046856C2 DE3046856A DE3046856A DE3046856C2 DE 3046856 C2 DE3046856 C2 DE 3046856C2 DE 3046856 A DE3046856 A DE 3046856A DE 3046856 A DE3046856 A DE 3046856A DE 3046856 C2 DE3046856 C2 DE 3046856C2
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- layer
- radiation
- mask
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 3
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 2
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 238000010894 electron beam technology Methods 0.000 description 20
- 239000011241 protective layer Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7943449A GB2066487B (en) | 1979-12-18 | 1979-12-18 | Alignment of exposure masks |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3046856A1 DE3046856A1 (de) | 1981-09-03 |
| DE3046856C2 true DE3046856C2 (en, 2012) | 1992-03-05 |
Family
ID=10509905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803046856 Granted DE3046856A1 (de) | 1979-12-18 | 1980-12-12 | Herstellung von mikrominiaturfeststoffanordnungen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4377627A (en, 2012) |
| JP (1) | JPS5698830A (en, 2012) |
| DE (1) | DE3046856A1 (en, 2012) |
| FR (1) | FR2472213A1 (en, 2012) |
| GB (1) | GB2066487B (en, 2012) |
| IE (1) | IE50699B1 (en, 2012) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407933A (en) * | 1981-06-11 | 1983-10-04 | Bell Telephone Laboratories, Incorporated | Alignment marks for electron beam lithography |
| DE3235064A1 (de) * | 1982-09-22 | 1984-03-22 | Siemens AG, 1000 Berlin und 8000 München | Tunnelkathodenmaske fuer die elektronenlithografie, verfahren zu ihrer herstellung und verfahren zu ihrem betrieb |
| JPS6010727A (ja) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | 位置合わせ方法 |
| US4608112A (en) * | 1984-05-16 | 1986-08-26 | The United States Of America As Represented By The Secretary Of The Air Force | Mask aligner for solar cell fabrication |
| US4547958A (en) * | 1984-05-16 | 1985-10-22 | The United States Of America As Represented By The Secretary Of The Air Force | VMJ Solar cell fabrication process using mask aligner |
| US4690880A (en) * | 1984-07-20 | 1987-09-01 | Canon Kabushiki Kaisha | Pattern forming method |
| GB2180669A (en) * | 1985-09-20 | 1987-04-01 | Phillips Electronic And Associ | An electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask |
| US4713315A (en) * | 1986-12-09 | 1987-12-15 | Smith David V | Wire tag etching system |
| US4948706A (en) * | 1987-12-30 | 1990-08-14 | Hoya Corporation | Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material |
| JP2794793B2 (ja) * | 1989-06-13 | 1998-09-10 | ソニー株式会社 | 露光用マスクの製造方法 |
| JPH045663U (en, 2012) * | 1990-04-28 | 1992-01-20 | ||
| JPH0521310A (ja) * | 1991-07-11 | 1993-01-29 | Canon Inc | 微細パタン形成方法 |
| US5382483A (en) * | 1992-01-13 | 1995-01-17 | International Business Machines Corporation | Self-aligned phase-shifting mask |
| JP3334911B2 (ja) * | 1992-07-31 | 2002-10-15 | キヤノン株式会社 | パターン形成方法 |
| US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| AU5681194A (en) * | 1993-01-21 | 1994-08-15 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| US5733708A (en) * | 1995-10-02 | 1998-03-31 | Litel Instruments | Multilayer e-beam lithography on nonconducting substrates |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3245794A (en) * | 1962-10-29 | 1966-04-12 | Ihilco Corp | Sequential registration scheme |
| US3607267A (en) * | 1967-10-09 | 1971-09-21 | Motorola Inc | Precision alignment of photographic masks |
| AT301620B (de) * | 1967-10-23 | 1972-08-15 | Siemens Ag | Verfahren zum herstellen einer photolackmaske fuer halbleiterzwecke |
| US3742229A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask alignment system |
| CS159563B1 (en, 2012) * | 1972-12-28 | 1975-01-31 | ||
| GB1520925A (en) * | 1975-10-06 | 1978-08-09 | Mullard Ltd | Semiconductor device manufacture |
| DE2600137A1 (de) * | 1976-01-03 | 1977-07-07 | Ernst Prof Dipl Phys Froeschle | Elektronenstrahlbelichtungsverfahren fuer halbleiterbauelemente |
| GB1557064A (en) * | 1976-09-09 | 1979-12-05 | Mullard Ltd | Masks suitable for use in electron image projectors |
| DE2642634A1 (de) * | 1976-09-22 | 1978-03-23 | Siemens Ag | Verfahren zum justieren von belichtungsmasken relativ zu einer substratscheibe |
| DE2708674C3 (de) * | 1977-02-28 | 1980-07-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Justieren einer Belichtungsmaske relativ zu einer Substratscheibe bei der Fotolithografie |
-
1979
- 1979-12-18 GB GB7943449A patent/GB2066487B/en not_active Expired
-
1980
- 1980-12-12 DE DE19803046856 patent/DE3046856A1/de active Granted
- 1980-12-15 IE IE2623/80A patent/IE50699B1/en unknown
- 1980-12-15 US US06/216,340 patent/US4377627A/en not_active Expired - Fee Related
- 1980-12-15 FR FR8026537A patent/FR2472213A1/fr active Granted
- 1980-12-16 JP JP17796980A patent/JPS5698830A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IE802623L (en) | 1981-06-18 |
| IE50699B1 (en) | 1986-06-25 |
| GB2066487B (en) | 1983-11-23 |
| US4377627A (en) | 1983-03-22 |
| FR2472213B1 (en, 2012) | 1983-10-07 |
| GB2066487A (en) | 1981-07-08 |
| JPS6318858B2 (en, 2012) | 1988-04-20 |
| FR2472213A1 (fr) | 1981-06-26 |
| JPS5698830A (en) | 1981-08-08 |
| DE3046856A1 (de) | 1981-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01L 21/31 |
|
| D2 | Grant after examination | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: KUNZE, K., DIPL.-ING. DR.-ING., PAT.-ASS., 2000 HAMBURG |
|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |