DE2420589B2 - - Google Patents
Info
- Publication number
- DE2420589B2 DE2420589B2 DE2420589A DE2420589A DE2420589B2 DE 2420589 B2 DE2420589 B2 DE 2420589B2 DE 2420589 A DE2420589 A DE 2420589A DE 2420589 A DE2420589 A DE 2420589A DE 2420589 B2 DE2420589 B2 DE 2420589B2
- Authority
- DE
- Germany
- Prior art keywords
- photoresist
- exposed
- areas
- mask
- developer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 81
- 238000000034 method Methods 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 34
- 238000011161 development Methods 0.000 claims description 13
- 230000018109 developmental process Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 230000035699 permeability Effects 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 7
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 6
- 229920003986 novolac Polymers 0.000 claims description 4
- 239000001488 sodium phosphate Substances 0.000 claims description 4
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 4
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- ZRUOTKQBVMWMDK-UHFFFAOYSA-N 2-hydroxy-6-methylbenzaldehyde Chemical compound CC1=CC=CC(O)=C1C=O ZRUOTKQBVMWMDK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004115 Sodium Silicate Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 24
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- YLSVTHSRAUMJIG-UHFFFAOYSA-N 6-diazo-5,8-dioxonaphthalene-1-sulfonic acid Chemical compound O=C1C(=[N+]=[N-])CC(=O)C2=C1C=CC=C2S(=O)(=O)O YLSVTHSRAUMJIG-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- XXTZHYXQVWRADW-UHFFFAOYSA-N diazomethanone Chemical compound [N]N=C=O XXTZHYXQVWRADW-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011877 solvent mixture Substances 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- -1 Silver halide Chemical class 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229960003742 phenol Drugs 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/98—Utilizing process equivalents or options
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/357,061 US3930857A (en) | 1973-05-03 | 1973-05-03 | Resist process |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2420589A1 DE2420589A1 (de) | 1974-11-21 |
| DE2420589B2 true DE2420589B2 (en, 2012) | 1980-08-07 |
| DE2420589C3 DE2420589C3 (de) | 1981-04-16 |
Family
ID=23404144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2420589A Expired DE2420589C3 (de) | 1973-05-03 | 1974-04-27 | Verfahren zum Herstellen von Photolackmustern |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3930857A (en, 2012) |
| JP (1) | JPS5827653B2 (en, 2012) |
| DE (1) | DE2420589C3 (en, 2012) |
| FR (1) | FR2228242B1 (en, 2012) |
| GB (1) | GB1457924A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3146559A1 (de) * | 1980-11-25 | 1982-11-11 | Kabushiki Kaisha Suwa Seikosha, Tokyo | Belichtungsmaske |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2447225C2 (de) * | 1974-10-03 | 1983-12-22 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Ablösen von positiven Photolack |
| US4024293A (en) * | 1975-12-10 | 1977-05-17 | International Business Machines Corporation | High sensitivity resist system for lift-off metallization |
| US4078102A (en) * | 1976-10-29 | 1978-03-07 | International Business Machines Corporation | Process for stripping resist layers from substrates |
| JPS5626450A (en) * | 1979-08-13 | 1981-03-14 | Hitachi Ltd | Manufacture of semiconductor device |
| US4377633A (en) * | 1981-08-24 | 1983-03-22 | International Business Machines Corporation | Methods of simultaneous contact and metal lithography patterning |
| US4361641A (en) * | 1981-11-10 | 1982-11-30 | University Patents, Inc. | Electrolytic surface modulation |
| US4498954A (en) * | 1984-04-09 | 1985-02-12 | Honeywell Inc. | Selective process for etching chromium |
| FR2577362B1 (fr) * | 1985-02-13 | 1987-04-17 | Ebauchesfabrik Eta Ag | Procede de fabrication de resonateurs a quartz a haute frequence |
| US4735878A (en) * | 1985-03-12 | 1988-04-05 | Quixote Corporation | Optically read recording medium and method for making same |
| DE3604917A1 (de) * | 1986-02-17 | 1987-08-27 | Messerschmitt Boelkow Blohm | Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen |
| DE3623637A1 (de) * | 1986-07-12 | 1988-01-21 | Kernforschungsz Karlsruhe | Verfahren zur herstellung von mikrostrukturen unterschiedlicher strukturhoehe mittels roentgentiefenlithographie |
| US4684436A (en) * | 1986-10-29 | 1987-08-04 | International Business Machines Corp. | Method of simultaneously etching personality and select |
| US4997746A (en) * | 1988-11-22 | 1991-03-05 | Greco Nancy A | Method of forming conductive lines and studs |
| US5143820A (en) * | 1989-10-31 | 1992-09-01 | International Business Machines Corporation | Method for fabricating high circuit density, self-aligned metal linens to contact windows |
| US5145717A (en) * | 1990-01-31 | 1992-09-08 | E. I. Du Pont De Nemours And Company | Stripping method for removing resist from a printed circuit board |
| US5213916A (en) * | 1990-10-30 | 1993-05-25 | International Business Machines Corporation | Method of making a gray level mask |
| DE69130389T2 (de) * | 1990-12-05 | 1999-04-29 | At & T Corp., New York, N.Y. | Lithographische Verfahren |
| US5244759A (en) * | 1991-02-27 | 1993-09-14 | At&T Bell Laboratories | Single-alignment-level lithographic technique for achieving self-aligned features |
| US5214542A (en) * | 1991-03-08 | 1993-05-25 | Nippon Oil Co., Ltd. | Method for producing color filter |
| US5385795A (en) * | 1991-03-08 | 1995-01-31 | Nippon Oil Co., Ltd. | Method for producing color filter |
| US5314769A (en) * | 1991-04-25 | 1994-05-24 | Nippon Oil Co., Ltd. | Method for producing color filter |
| US5314770A (en) * | 1991-04-26 | 1994-05-24 | Nippon Oil Co., Ltd. | Method for producing color filter |
| US5214541A (en) * | 1991-06-12 | 1993-05-25 | Nippon Oil Co., Ltd. | Method for producing color filter |
| US5334468A (en) * | 1991-07-09 | 1994-08-02 | Nippon Oil Co., Ltd. | Method for producing color filter |
| US5888908A (en) * | 1992-04-30 | 1999-03-30 | Stmicroelectronics, Inc. | Method for reducing reflectivity of a metal layer |
| JP2949391B2 (ja) * | 1992-08-04 | 1999-09-13 | 日石三菱株式会社 | カラーフィルターの製造法 |
| JP3088048B2 (ja) * | 1992-09-08 | 2000-09-18 | 日石三菱株式会社 | カラーフィルターの製造法 |
| US5466636A (en) * | 1992-09-17 | 1995-11-14 | International Business Machines Corporation | Method of forming borderless contacts using a removable mandrel |
| US5897982A (en) * | 1996-03-05 | 1999-04-27 | Kabushiki Kaisha Toshiba | Resist develop process having a post develop dispense step |
| US6140707A (en) * | 1998-05-07 | 2000-10-31 | 3M Innovative Properties Co. | Laminated integrated circuit package |
| JP3233279B2 (ja) * | 1998-10-06 | 2001-11-26 | 日本アイ・ビー・エム株式会社 | 洗浄剤組成物および洗浄方法 |
| JP3353740B2 (ja) * | 1999-04-21 | 2002-12-03 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6747727B2 (en) | 1999-04-26 | 2004-06-08 | Hong-Da Liu | Method for the manufacture of a liquid crystal display |
| KR20030023204A (ko) * | 2001-09-12 | 2003-03-19 | 삼성전자주식회사 | 포토레지스트용 스트리퍼 조성물 |
| US7288279B2 (en) * | 2001-12-21 | 2007-10-30 | Michael Foods Of Delaware, Inc. | Formulated fried egg product |
| CN100435358C (zh) | 2003-09-09 | 2008-11-19 | Csg索拉尔有限公司 | 通过回流调节掩模 |
| AU2004271225B2 (en) * | 2003-09-09 | 2010-01-21 | Csg Solar Ag | Improved method of forming openings in an organic resin material |
| EP1665353A4 (en) * | 2003-09-09 | 2006-11-29 | Csg Solar Ag | IMPROVED METHOD FOR Etching SILICON |
| CN100561668C (zh) | 2003-09-09 | 2009-11-18 | Csg索拉尔有限公司 | 在有机树脂材料中形成开口的改进方法 |
| US7354696B2 (en) * | 2004-07-08 | 2008-04-08 | Agfa Graphics Nv | Method for making a lithographic printing plate |
| KR101232137B1 (ko) * | 2005-11-21 | 2013-02-12 | 엘지디스플레이 주식회사 | 인쇄판, 인쇄판의 제조방법 및 그를 이용한 액정표시소자제조방법 |
| US8268159B2 (en) * | 2005-12-20 | 2012-09-18 | Ceramatec, Inc. | Electrolytic process to produce sodium hypochlorite using sodium ion conductive ceramic membranes |
| US8148055B2 (en) * | 2006-06-30 | 2012-04-03 | Infineon Technologies Ag | Method for developing a photoresist |
| DE102006030359B4 (de) * | 2006-06-30 | 2011-07-07 | Infineon Technologies AG, 81669 | Verfahren zum Entwickeln eines Photolacks |
| CN101365300A (zh) * | 2007-08-08 | 2009-02-11 | 富葵精密组件(深圳)有限公司 | 电路板导电线路的制作方法 |
| US20220035251A1 (en) * | 2020-07-31 | 2022-02-03 | Applied Materials, Inc. | Methods to fabricate 2d wedge and localized encapsulation for diffractive optics |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE568197A (en, 2012) * | 1957-06-12 | |||
| NL138044C (en, 2012) * | 1961-07-28 | |||
| US3458311A (en) * | 1966-06-27 | 1969-07-29 | Du Pont | Photopolymerizable elements with solvent removable protective layers |
| US3600243A (en) * | 1966-11-09 | 1971-08-17 | Us Army | Method of making chromium mask for photoresist application |
| US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
| DE1772461C3 (de) * | 1967-05-25 | 1974-07-25 | Teeg Research Inc., Detroit, Mich. (V.St.A.) | Verfahren zur Herstellung von Reliefbildern |
| US3730717A (en) * | 1969-03-28 | 1973-05-01 | Du Pont | Photohardenable element with light developable direct writing silver halide overcoating |
| US3649393A (en) * | 1970-06-12 | 1972-03-14 | Ibm | Variable depth etching of film layers using variable exposures of photoresists |
| BE794482A (fr) * | 1972-01-25 | 1973-07-24 | Du Pont | Compositions photopolymerisables contenant des composes cis- alpha -dicarbonyliques cycliques et des sensibilisateurs choisis |
-
1973
- 1973-05-03 US US05/357,061 patent/US3930857A/en not_active Expired - Lifetime
-
1974
- 1974-03-19 FR FR7410668A patent/FR2228242B1/fr not_active Expired
- 1974-04-03 JP JP49037066A patent/JPS5827653B2/ja not_active Expired
- 1974-04-08 GB GB1543274A patent/GB1457924A/en not_active Expired
- 1974-04-27 DE DE2420589A patent/DE2420589C3/de not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3146559A1 (de) * | 1980-11-25 | 1982-11-11 | Kabushiki Kaisha Suwa Seikosha, Tokyo | Belichtungsmaske |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1457924A (en) | 1976-12-08 |
| US3930857A (en) | 1976-01-06 |
| FR2228242A1 (en, 2012) | 1974-11-29 |
| DE2420589A1 (de) | 1974-11-21 |
| JPS5827653B2 (ja) | 1983-06-10 |
| DE2420589C3 (de) | 1981-04-16 |
| JPS5011387A (en, 2012) | 1975-02-05 |
| FR2228242B1 (en, 2012) | 1978-11-03 |
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| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |