DE2950596C2 - - Google Patents
Info
- Publication number
- DE2950596C2 DE2950596C2 DE2950596A DE2950596A DE2950596C2 DE 2950596 C2 DE2950596 C2 DE 2950596C2 DE 2950596 A DE2950596 A DE 2950596A DE 2950596 A DE2950596 A DE 2950596A DE 2950596 C2 DE2950596 C2 DE 2950596C2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- drain
- voltage
- transistors
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 230000014509 gene expression Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- LYKJEJVAXSGWAJ-UHFFFAOYSA-N compactone Natural products CC1(C)CCCC2(C)C1CC(=O)C3(O)CC(C)(CCC23)C=C LYKJEJVAXSGWAJ-UHFFFAOYSA-N 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
- H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/970,231 US4197511A (en) | 1978-12-18 | 1978-12-18 | Linear load MOS transistor circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2950596A1 DE2950596A1 (de) | 1980-06-26 |
| DE2950596C2 true DE2950596C2 (en, 2012) | 1987-12-17 |
Family
ID=25516627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19792950596 Granted DE2950596A1 (de) | 1978-12-18 | 1979-12-15 | Transistorschaltungsanordnung zur darstellung eines widerstandes |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4197511A (en, 2012) |
| JP (2) | JPS5583258A (en, 2012) |
| BE (1) | BE880633A (en, 2012) |
| DE (1) | DE2950596A1 (en, 2012) |
| FR (1) | FR2445025A1 (en, 2012) |
| GB (1) | GB2040630B (en, 2012) |
| IT (1) | IT1126588B (en, 2012) |
| NL (1) | NL7909051A (en, 2012) |
| SE (2) | SE444099B (en, 2012) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57125506A (en) * | 1981-01-29 | 1982-08-04 | Hitachi Ltd | Operational amplifying circuit |
| JPS60103827A (ja) * | 1983-11-11 | 1985-06-08 | Fujitsu Ltd | 電圧変換回路 |
| SG44661A1 (en) * | 1992-02-11 | 1997-12-19 | Philips Electronics Nv | Current divider and intergrated circuit comprising a plurality of current dividers |
| EP0555905B1 (en) * | 1992-02-11 | 1996-12-18 | Koninklijke Philips Electronics N.V. | Current divider and integrated circuit comprising a plurality of current dividers |
| USD595352S1 (en) * | 2007-08-29 | 2009-06-30 | Kabushiki Kaisha Pilot Corporation | Ballpoint pen |
| US8759939B2 (en) * | 2012-01-31 | 2014-06-24 | Infineon Technologies Dresden Gmbh | Semiconductor arrangement with active drift zone |
| KR20210076105A (ko) * | 2018-10-18 | 2021-06-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 웨이퍼, 및 전자 기기 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3392341A (en) * | 1965-09-10 | 1968-07-09 | Rca Corp | Self-biased field effect transistor amplifier |
| US3675143A (en) * | 1970-02-16 | 1972-07-04 | Gte Laboratories Inc | All-fet linear voltage amplifier |
| US3723892A (en) * | 1972-03-22 | 1973-03-27 | Julie Res Labor Inc | Circuit using dynamic high impedance load |
| US3806742A (en) * | 1972-11-01 | 1974-04-23 | Motorola Inc | Mos voltage reference circuit |
| DE2435606C3 (de) * | 1974-07-24 | 1979-03-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes |
| FR2318533A1 (fr) * | 1975-07-15 | 1977-02-11 | Commissariat Energie Atomique | Dispositif de polarisation d'un amplificateur differentiel |
| GB2034937B (en) * | 1978-11-14 | 1983-01-06 | Philips Electronic Associated | Regulated power supply |
-
1978
- 1978-12-18 US US05/970,231 patent/US4197511A/en not_active Expired - Lifetime
-
1979
- 1979-12-10 SE SE7910152A patent/SE444099B/sv not_active IP Right Cessation
- 1979-12-13 GB GB7942966A patent/GB2040630B/en not_active Expired
- 1979-12-14 BE BE0/198575A patent/BE880633A/fr not_active IP Right Cessation
- 1979-12-14 NL NL7909051A patent/NL7909051A/nl unknown
- 1979-12-15 DE DE19792950596 patent/DE2950596A1/de active Granted
- 1979-12-17 FR FR7930842A patent/FR2445025A1/fr active Granted
- 1979-12-18 IT IT28175/79A patent/IT1126588B/it active
- 1979-12-18 JP JP16367679A patent/JPS5583258A/ja active Pending
-
1985
- 1985-07-24 SE SE8503585A patent/SE455454B/sv not_active IP Right Cessation
- 1985-10-28 JP JP1985165592U patent/JPH04582Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT7928175A0 (it) | 1979-12-18 |
| BE880633A (fr) | 1980-04-01 |
| JPH04582Y2 (en, 2012) | 1992-01-09 |
| IT1126588B (it) | 1986-05-21 |
| NL7909051A (nl) | 1980-06-20 |
| SE455454B (sv) | 1988-07-11 |
| SE7910152L (sv) | 1980-06-19 |
| FR2445025B1 (en, 2012) | 1984-10-05 |
| SE8503585D0 (sv) | 1985-07-24 |
| JPS5583258A (en) | 1980-06-23 |
| US4197511A (en) | 1980-04-08 |
| SE8503585L (sv) | 1985-07-24 |
| FR2445025A1 (fr) | 1980-07-18 |
| JPS61134124U (en, 2012) | 1986-08-21 |
| DE2950596A1 (de) | 1980-06-26 |
| GB2040630B (en) | 1983-04-13 |
| SE444099B (sv) | 1986-03-17 |
| GB2040630A (en) | 1980-08-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8128 | New person/name/address of the agent |
Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W. |
|
| 8127 | New person/name/address of the applicant |
Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US |
|
| 8128 | New person/name/address of the agent |
Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W. |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |