JPS5583258A - Transistor circuit unit - Google Patents

Transistor circuit unit

Info

Publication number
JPS5583258A
JPS5583258A JP16367679A JP16367679A JPS5583258A JP S5583258 A JPS5583258 A JP S5583258A JP 16367679 A JP16367679 A JP 16367679A JP 16367679 A JP16367679 A JP 16367679A JP S5583258 A JPS5583258 A JP S5583258A
Authority
JP
Japan
Prior art keywords
circuit unit
transistor circuit
transistor
unit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16367679A
Other languages
English (en)
Japanese (ja)
Inventor
Heinrich Sequin Carlo
Joseph Zimany Edward Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5583258A publication Critical patent/JPS5583258A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/342Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators
    • H03H11/245Frequency-independent attenuators using field-effect transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP16367679A 1978-12-18 1979-12-18 Transistor circuit unit Pending JPS5583258A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/970,231 US4197511A (en) 1978-12-18 1978-12-18 Linear load MOS transistor circuit

Publications (1)

Publication Number Publication Date
JPS5583258A true JPS5583258A (en) 1980-06-23

Family

ID=25516627

Family Applications (2)

Application Number Title Priority Date Filing Date
JP16367679A Pending JPS5583258A (en) 1978-12-18 1979-12-18 Transistor circuit unit
JP1985165592U Expired JPH04582Y2 (en, 2012) 1978-12-18 1985-10-28

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP1985165592U Expired JPH04582Y2 (en, 2012) 1978-12-18 1985-10-28

Country Status (9)

Country Link
US (1) US4197511A (en, 2012)
JP (2) JPS5583258A (en, 2012)
BE (1) BE880633A (en, 2012)
DE (1) DE2950596A1 (en, 2012)
FR (1) FR2445025A1 (en, 2012)
GB (1) GB2040630B (en, 2012)
IT (1) IT1126588B (en, 2012)
NL (1) NL7909051A (en, 2012)
SE (2) SE444099B (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57125506A (en) * 1981-01-29 1982-08-04 Hitachi Ltd Operational amplifying circuit
KR20140121415A (ko) * 2012-01-31 2014-10-15 인피니언 테크놀로지스 드레스덴 게엠베하 활성 드리프트 구역을 갖는 반도체 장치

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103827A (ja) * 1983-11-11 1985-06-08 Fujitsu Ltd 電圧変換回路
SG44661A1 (en) * 1992-02-11 1997-12-19 Philips Electronics Nv Current divider and intergrated circuit comprising a plurality of current dividers
EP0555905B1 (en) * 1992-02-11 1996-12-18 Koninklijke Philips Electronics N.V. Current divider and integrated circuit comprising a plurality of current dividers
USD595352S1 (en) * 2007-08-29 2009-06-30 Kabushiki Kaisha Pilot Corporation Ballpoint pen
KR20210076105A (ko) * 2018-10-18 2021-06-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 웨이퍼, 및 전자 기기

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3392341A (en) * 1965-09-10 1968-07-09 Rca Corp Self-biased field effect transistor amplifier
US3675143A (en) * 1970-02-16 1972-07-04 Gte Laboratories Inc All-fet linear voltage amplifier
US3723892A (en) * 1972-03-22 1973-03-27 Julie Res Labor Inc Circuit using dynamic high impedance load
US3806742A (en) * 1972-11-01 1974-04-23 Motorola Inc Mos voltage reference circuit
DE2435606C3 (de) * 1974-07-24 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes
FR2318533A1 (fr) * 1975-07-15 1977-02-11 Commissariat Energie Atomique Dispositif de polarisation d'un amplificateur differentiel
GB2034937B (en) * 1978-11-14 1983-01-06 Philips Electronic Associated Regulated power supply

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57125506A (en) * 1981-01-29 1982-08-04 Hitachi Ltd Operational amplifying circuit
KR20140121415A (ko) * 2012-01-31 2014-10-15 인피니언 테크놀로지스 드레스덴 게엠베하 활성 드리프트 구역을 갖는 반도체 장치
JP2015510689A (ja) * 2012-01-31 2015-04-09 インフィネオン テクノロジーズ ドレスデン ゲーエムベーハー 活性ドリフトゾーンを有する半導体構成

Also Published As

Publication number Publication date
IT7928175A0 (it) 1979-12-18
BE880633A (fr) 1980-04-01
JPH04582Y2 (en, 2012) 1992-01-09
IT1126588B (it) 1986-05-21
NL7909051A (nl) 1980-06-20
SE455454B (sv) 1988-07-11
SE7910152L (sv) 1980-06-19
FR2445025B1 (en, 2012) 1984-10-05
SE8503585D0 (sv) 1985-07-24
DE2950596C2 (en, 2012) 1987-12-17
US4197511A (en) 1980-04-08
SE8503585L (sv) 1985-07-24
FR2445025A1 (fr) 1980-07-18
JPS61134124U (en, 2012) 1986-08-21
DE2950596A1 (de) 1980-06-26
GB2040630B (en) 1983-04-13
SE444099B (sv) 1986-03-17
GB2040630A (en) 1980-08-28

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