DE2950596A1 - Transistorschaltungsanordnung zur darstellung eines widerstandes - Google Patents
Transistorschaltungsanordnung zur darstellung eines widerstandesInfo
- Publication number
- DE2950596A1 DE2950596A1 DE19792950596 DE2950596A DE2950596A1 DE 2950596 A1 DE2950596 A1 DE 2950596A1 DE 19792950596 DE19792950596 DE 19792950596 DE 2950596 A DE2950596 A DE 2950596A DE 2950596 A1 DE2950596 A1 DE 2950596A1
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- amplifier
- circuit arrangement
- input
- arrangement according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 230000014509 gene expression Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000013016 damping Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
- H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Amplifiers (AREA)
- Networks Using Active Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/970,231 US4197511A (en) | 1978-12-18 | 1978-12-18 | Linear load MOS transistor circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2950596A1 true DE2950596A1 (de) | 1980-06-26 |
| DE2950596C2 DE2950596C2 ( ) | 1987-12-17 |
Family
ID=25516627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19792950596 Granted DE2950596A1 (de) | 1978-12-18 | 1979-12-15 | Transistorschaltungsanordnung zur darstellung eines widerstandes |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4197511A ( ) |
| JP (2) | JPS5583258A ( ) |
| BE (1) | BE880633A ( ) |
| DE (1) | DE2950596A1 ( ) |
| FR (1) | FR2445025A1 ( ) |
| GB (1) | GB2040630B ( ) |
| IT (1) | IT1126588B ( ) |
| NL (1) | NL7909051A ( ) |
| SE (2) | SE444099B ( ) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57125506A (en) * | 1981-01-29 | 1982-08-04 | Hitachi Ltd | Operational amplifying circuit |
| JPS60103827A (ja) * | 1983-11-11 | 1985-06-08 | Fujitsu Ltd | 電圧変換回路 |
| DE69306603T2 (de) * | 1992-02-11 | 1997-06-05 | Philips Electronics Nv | Stromteiler sowie integrierte Schaltung mit mehreren Stromteilern |
| EP0555905B1 (en) * | 1992-02-11 | 1996-12-18 | Koninklijke Philips Electronics N.V. | Current divider and integrated circuit comprising a plurality of current dividers |
| US8759939B2 (en) * | 2012-01-31 | 2014-06-24 | Infineon Technologies Dresden Gmbh | Semiconductor arrangement with active drift zone |
| WO2020079572A1 (ja) * | 2018-10-18 | 2020-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、及び電子機器 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2435606B2 (de) * | 1974-07-24 | 1978-06-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3392341A (en) * | 1965-09-10 | 1968-07-09 | Rca Corp | Self-biased field effect transistor amplifier |
| US3675143A (en) * | 1970-02-16 | 1972-07-04 | Gte Laboratories Inc | All-fet linear voltage amplifier |
| US3723892A (en) * | 1972-03-22 | 1973-03-27 | Julie Res Labor Inc | Circuit using dynamic high impedance load |
| US3806742A (en) * | 1972-11-01 | 1974-04-23 | Motorola Inc | Mos voltage reference circuit |
| FR2318533A1 (fr) * | 1975-07-15 | 1977-02-11 | Commissariat Energie Atomique | Dispositif de polarisation d'un amplificateur differentiel |
| GB2034937B (en) * | 1978-11-14 | 1983-01-06 | Philips Electronic Associated | Regulated power supply |
-
1978
- 1978-12-18 US US05/970,231 patent/US4197511A/en not_active Expired - Lifetime
-
1979
- 1979-12-10 SE SE7910152A patent/SE444099B/sv not_active IP Right Cessation
- 1979-12-13 GB GB7942966A patent/GB2040630B/en not_active Expired
- 1979-12-14 BE BE0/198575A patent/BE880633A/fr not_active IP Right Cessation
- 1979-12-14 NL NL7909051A patent/NL7909051A/nl unknown
- 1979-12-15 DE DE19792950596 patent/DE2950596A1/de active Granted
- 1979-12-17 FR FR7930842A patent/FR2445025A1/fr active Granted
- 1979-12-18 JP JP16367679A patent/JPS5583258A/ja active Pending
- 1979-12-18 IT IT28175/79A patent/IT1126588B/it active
-
1985
- 1985-07-24 SE SE8503585A patent/SE455454B/sv not_active IP Right Cessation
- 1985-10-28 JP JP1985165592U patent/JPH04582Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2435606B2 (de) * | 1974-07-24 | 1978-06-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes |
Also Published As
| Publication number | Publication date |
|---|---|
| SE455454B (sv) | 1988-07-11 |
| FR2445025B1 ( ) | 1984-10-05 |
| BE880633A (fr) | 1980-04-01 |
| US4197511A (en) | 1980-04-08 |
| DE2950596C2 ( ) | 1987-12-17 |
| GB2040630B (en) | 1983-04-13 |
| NL7909051A (nl) | 1980-06-20 |
| JPH04582Y2 ( ) | 1992-01-09 |
| SE7910152L (sv) | 1980-06-19 |
| SE444099B (sv) | 1986-03-17 |
| JPS5583258A (en) | 1980-06-23 |
| SE8503585L (sv) | 1985-07-24 |
| IT1126588B (it) | 1986-05-21 |
| FR2445025A1 (fr) | 1980-07-18 |
| JPS61134124U ( ) | 1986-08-21 |
| SE8503585D0 (sv) | 1985-07-24 |
| GB2040630A (en) | 1980-08-28 |
| IT7928175A0 (it) | 1979-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8128 | New person/name/address of the agent |
Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W. |
|
| 8127 | New person/name/address of the applicant |
Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US |
|
| 8128 | New person/name/address of the agent |
Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W. |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |