DE2925648C2 - - Google Patents
Info
- Publication number
- DE2925648C2 DE2925648C2 DE2925648A DE2925648A DE2925648C2 DE 2925648 C2 DE2925648 C2 DE 2925648C2 DE 2925648 A DE2925648 A DE 2925648A DE 2925648 A DE2925648 A DE 2925648A DE 2925648 C2 DE2925648 C2 DE 2925648C2
- Authority
- DE
- Germany
- Prior art keywords
- gain
- semiconductor laser
- laser according
- active region
- heterostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7811085 | 1978-11-08 | ||
NL7900668A NL7900668A (nl) | 1978-11-08 | 1979-01-29 | Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2925648A1 DE2925648A1 (de) | 1980-05-22 |
DE2925648C2 true DE2925648C2 (ja) | 1987-12-10 |
Family
ID=26645465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19792925648 Granted DE2925648A1 (de) | 1978-11-08 | 1979-06-26 | Anordnung zum erzeugen oder verstaerken kohaerenter elektromagnetischer strahlung und verfahren zur herstellung der anordnung |
Country Status (8)
Country | Link |
---|---|
US (1) | US4359776A (ja) |
AU (1) | AU4779979A (ja) |
DE (1) | DE2925648A1 (ja) |
FR (1) | FR2441935A1 (ja) |
GB (1) | GB2033647A (ja) |
IT (1) | IT1121253B (ja) |
NL (1) | NL7900668A (ja) |
SE (1) | SE7909119L (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7908969A (nl) * | 1979-12-13 | 1981-07-16 | Philips Nv | Halfgeleiderlaser. |
JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
US4573163A (en) * | 1982-09-13 | 1986-02-25 | At&T Bell Laboratories | Longitudinal mode stabilized laser |
JPH0666509B2 (ja) * | 1983-12-14 | 1994-08-24 | 株式会社日立製作所 | 分布帰還型半導体レ−ザ装置 |
JPS61113293A (ja) * | 1984-11-07 | 1986-05-31 | Sharp Corp | 半導体レ−ザアレイ装置 |
US4794346A (en) * | 1984-11-21 | 1988-12-27 | Bell Communications Research, Inc. | Broadband semiconductor optical amplifier structure |
US4689797A (en) * | 1985-08-19 | 1987-08-25 | Gte Laboratories Incorporated | High power single spatial mode semiconductor laser |
US4845014A (en) * | 1985-10-21 | 1989-07-04 | Rca Corporation | Method of forming a channel |
US4837775A (en) * | 1985-10-21 | 1989-06-06 | General Electric Company | Electro-optic device having a laterally varying region |
US4824747A (en) * | 1985-10-21 | 1989-04-25 | General Electric Company | Method of forming a variable width channel |
US4783788A (en) * | 1985-12-16 | 1988-11-08 | Lytel Incorporated | High power semiconductor lasers |
JPS62194237A (ja) * | 1986-02-20 | 1987-08-26 | Kyohei Sakuta | 光増幅機能を有する3結合導波路光タツプ |
US4791648A (en) * | 1987-02-04 | 1988-12-13 | Amoco Corporation | Laser having a substantially planar waveguide |
CA1330242C (en) * | 1987-11-30 | 1994-06-14 | Gte Laboratories Incorporated | Subcarrier-multiplexed optical transmission systems using optical channel selection |
DE3923354A1 (de) * | 1989-07-14 | 1991-01-24 | Licentia Gmbh | Halbleiterlaser |
JPH04155988A (ja) * | 1990-10-19 | 1992-05-28 | Rohm Co Ltd | 半導体レーザ |
US5627668A (en) * | 1992-02-10 | 1997-05-06 | Gte Laboratories Incorporated | Subcarrier-multiplexed optical transmission systems using optical channel selection |
EP1066666B1 (de) * | 1999-02-03 | 2008-08-06 | TRUMPF LASERTECHNIK GmbH | Laser mit einer einrichtung zur veränderung der verteilung der intensität des laserlichtes über den laserstrahlquerschnitt |
JP2008529316A (ja) | 2005-02-02 | 2008-07-31 | コヴェガ・インコーポレーテッド | 不均一な注入電流密度を有する半導体光増幅器 |
US20090089168A1 (en) * | 2007-01-10 | 2009-04-02 | Phyllis Adele Schneck | ACE (Alternative Currency Exchange): Alternative Currency Tracking and Mapping System and Method |
US8890324B2 (en) * | 2010-09-28 | 2014-11-18 | Freescale Semiconductor, Inc. | Semiconductor structure having a through substrate via (TSV) and method for forming |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4251780A (en) * | 1978-07-03 | 1981-02-17 | Xerox Corporation | Stripe offset geometry in injection lasers to achieve transverse mode control |
-
1979
- 1979-01-29 NL NL7900668A patent/NL7900668A/nl not_active Application Discontinuation
- 1979-06-04 IT IT23273/79A patent/IT1121253B/it active
- 1979-06-06 AU AU47799/79A patent/AU4779979A/en not_active Abandoned
- 1979-06-07 GB GB7919893A patent/GB2033647A/en not_active Withdrawn
- 1979-06-18 US US06/049,778 patent/US4359776A/en not_active Expired - Lifetime
- 1979-06-26 DE DE19792925648 patent/DE2925648A1/de active Granted
- 1979-09-28 FR FR7924173A patent/FR2441935A1/fr not_active Withdrawn
- 1979-11-05 SE SE7909119A patent/SE7909119L/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE2925648A1 (de) | 1980-05-22 |
GB2033647A (en) | 1980-05-21 |
SE7909119L (sv) | 1980-05-09 |
FR2441935A1 (fr) | 1980-06-13 |
IT7923273A0 (it) | 1979-06-04 |
AU4779979A (en) | 1980-05-15 |
NL7900668A (nl) | 1980-05-12 |
US4359776A (en) | 1982-11-16 |
IT1121253B (it) | 1986-04-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |