DE2915883A1 - Verfahren zum anbringen einer epitaktischen schicht - Google Patents

Verfahren zum anbringen einer epitaktischen schicht

Info

Publication number
DE2915883A1
DE2915883A1 DE19792915883 DE2915883A DE2915883A1 DE 2915883 A1 DE2915883 A1 DE 2915883A1 DE 19792915883 DE19792915883 DE 19792915883 DE 2915883 A DE2915883 A DE 2915883A DE 2915883 A1 DE2915883 A1 DE 2915883A1
Authority
DE
Germany
Prior art keywords
substrate
support device
layer
deposited
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19792915883
Other languages
German (de)
English (en)
Other versions
DE2915883C2 (el
Inventor
Paulus Zacharias Antoniu Putte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2915883A1 publication Critical patent/DE2915883A1/de
Application granted granted Critical
Publication of DE2915883C2 publication Critical patent/DE2915883C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19792915883 1978-04-21 1979-04-19 Verfahren zum anbringen einer epitaktischen schicht Granted DE2915883A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7804268,A NL187414C (nl) 1978-04-21 1978-04-21 Werkwijze voor het aanbrengen van een epitaxiale laag.

Publications (2)

Publication Number Publication Date
DE2915883A1 true DE2915883A1 (de) 1979-10-31
DE2915883C2 DE2915883C2 (el) 1987-01-22

Family

ID=19830695

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792915883 Granted DE2915883A1 (de) 1978-04-21 1979-04-19 Verfahren zum anbringen einer epitaktischen schicht

Country Status (8)

Country Link
JP (1) JPS54141560A (el)
AU (1) AU523988B2 (el)
CA (1) CA1134059A (el)
DE (1) DE2915883A1 (el)
FR (1) FR2423865A1 (el)
GB (1) GB2019644B (el)
IT (1) IT1112317B (el)
NL (1) NL187414C (el)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671770B1 (en) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Multilayer epitaxy for a silicon diode
JP6477210B2 (ja) 2015-04-30 2019-03-06 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6358472B2 (ja) * 2015-06-08 2018-07-18 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6447960B2 (ja) * 2016-04-01 2019-01-09 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1236481B (de) * 1962-02-02 1967-03-16 Siemens Ag Verfahren zur Herstellen einer Halbleiteranordnung durch Abscheiden des Halbleiterstoffes aus der Gasphase

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2547692C3 (de) * 1975-10-24 1979-10-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Halbleiteranordnung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1236481B (de) * 1962-02-02 1967-03-16 Siemens Ag Verfahren zur Herstellen einer Halbleiteranordnung durch Abscheiden des Halbleiterstoffes aus der Gasphase

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z: J. Electrochem.Soc. Solid-State Science and Technology, Dez. 1975, Vol. 122, Nr. 12, 1705-1709 *

Also Published As

Publication number Publication date
FR2423865B1 (el) 1984-07-27
DE2915883C2 (el) 1987-01-22
NL187414B (nl) 1991-04-16
AU4604679A (en) 1979-10-25
GB2019644B (en) 1982-09-29
JPS54141560A (en) 1979-11-02
FR2423865A1 (fr) 1979-11-16
GB2019644A (en) 1979-10-31
NL187414C (nl) 1991-09-16
IT7921949A0 (it) 1979-04-18
CA1134059A (en) 1982-10-19
IT1112317B (it) 1986-01-13
NL7804268A (nl) 1979-10-23
JPS5538819B2 (el) 1980-10-07
AU523988B2 (en) 1982-08-26

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Legal Events

Date Code Title Description
8126 Change of the secondary classification

Free format text: C30B 29/06 C30B 31/08

8110 Request for examination paragraph 44
8128 New person/name/address of the agent

Representative=s name: NEHMZOW-DAVID, F., PAT.-ASS., 2000 HAMBURG

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee