DE2912439A1 - Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten - Google Patents

Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten

Info

Publication number
DE2912439A1
DE2912439A1 DE19792912439 DE2912439A DE2912439A1 DE 2912439 A1 DE2912439 A1 DE 2912439A1 DE 19792912439 DE19792912439 DE 19792912439 DE 2912439 A DE2912439 A DE 2912439A DE 2912439 A1 DE2912439 A1 DE 2912439A1
Authority
DE
Germany
Prior art keywords
integrated
semiconductor circuit
substrate
storage capacity
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19792912439
Other languages
German (de)
English (en)
Inventor
Hans Prof Dipl Phys Reiner
Dieter Dipl Phys Dr Stroehle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent Deutschland AG
Original Assignee
Standard Elektrik Lorenz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Elektrik Lorenz AG filed Critical Standard Elektrik Lorenz AG
Priority to DE19792912439 priority Critical patent/DE2912439A1/de
Priority to GB8010299A priority patent/GB2045526A/en
Priority to JP3912580A priority patent/JPS55146958A/ja
Priority to FR8006953A priority patent/FR2452790A1/fr
Publication of DE2912439A1 publication Critical patent/DE2912439A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10W42/25—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19792912439 1979-03-29 1979-03-29 Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten Withdrawn DE2912439A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19792912439 DE2912439A1 (de) 1979-03-29 1979-03-29 Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten
GB8010299A GB2045526A (en) 1979-03-29 1980-03-27 Integrated circuit capacitors
JP3912580A JPS55146958A (en) 1979-03-29 1980-03-28 Semiconductor integrated circuit integrated with storage capacitor
FR8006953A FR2452790A1 (fr) 1979-03-29 1980-03-28 Circuit integre a semi-conducteurs comprenant des condensateurs a memoire integres

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792912439 DE2912439A1 (de) 1979-03-29 1979-03-29 Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten

Publications (1)

Publication Number Publication Date
DE2912439A1 true DE2912439A1 (de) 1980-10-16

Family

ID=6066777

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792912439 Withdrawn DE2912439A1 (de) 1979-03-29 1979-03-29 Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten

Country Status (4)

Country Link
JP (1) JPS55146958A (enExample)
DE (1) DE2912439A1 (enExample)
FR (1) FR2452790A1 (enExample)
GB (1) GB2045526A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3148968A1 (de) * 1980-12-10 1982-07-01 Clarion Co., Ltd., Tokyo Kondensator mit veraenderbarer kapazitaet

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3163340D1 (en) * 1980-01-29 1984-06-07 Nec Corp Semiconductor device
DE3128014A1 (de) * 1981-07-15 1983-02-03 Siemens AG, 1000 Berlin und 8000 München Anordnung zur reduzierung der empfindlichkeit von integrierten halbleiterspeichern gegen alpha-strahlung
FR2526225B1 (fr) * 1982-04-30 1985-11-08 Radiotechnique Compelec Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
FR2530077A1 (fr) * 1982-07-09 1984-01-13 Radiotechnique Compelec Procede de realisation de condensateurs integres dans une structure microelectronique
US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
EP0893831A1 (en) 1997-07-23 1999-01-27 STMicroelectronics S.r.l. High voltage capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3148968A1 (de) * 1980-12-10 1982-07-01 Clarion Co., Ltd., Tokyo Kondensator mit veraenderbarer kapazitaet

Also Published As

Publication number Publication date
FR2452790A1 (fr) 1980-10-24
GB2045526A (en) 1980-10-29
JPS55146958A (en) 1980-11-15
FR2452790B3 (enExample) 1981-12-31

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee