GB2045526A - Integrated circuit capacitors - Google Patents

Integrated circuit capacitors Download PDF

Info

Publication number
GB2045526A
GB2045526A GB8010299A GB8010299A GB2045526A GB 2045526 A GB2045526 A GB 2045526A GB 8010299 A GB8010299 A GB 8010299A GB 8010299 A GB8010299 A GB 8010299A GB 2045526 A GB2045526 A GB 2045526A
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
substrate
semiconductor integrated
layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8010299A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB2045526A publication Critical patent/GB2045526A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10W42/25—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB8010299A 1979-03-29 1980-03-27 Integrated circuit capacitors Withdrawn GB2045526A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792912439 DE2912439A1 (de) 1979-03-29 1979-03-29 Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten

Publications (1)

Publication Number Publication Date
GB2045526A true GB2045526A (en) 1980-10-29

Family

ID=6066777

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8010299A Withdrawn GB2045526A (en) 1979-03-29 1980-03-27 Integrated circuit capacitors

Country Status (4)

Country Link
JP (1) JPS55146958A (enExample)
DE (1) DE2912439A1 (enExample)
FR (1) FR2452790A1 (enExample)
GB (1) GB2045526A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0033159A3 (en) * 1980-01-29 1981-08-19 Nec Corporation Semiconductor device
FR2526225A1 (fr) * 1982-04-30 1983-11-04 Radiotechnique Compelec Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
FR2530077A1 (fr) * 1982-07-09 1984-01-13 Radiotechnique Compelec Procede de realisation de condensateurs integres dans une structure microelectronique
EP0070026A3 (de) * 1981-07-15 1985-07-03 Siemens Aktiengesellschaft Anordnung zur Reduzierung der Empfindlichkeit von integrierten Halbleiterspeichern gegen Alpha-Strahlung
US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
EP0893831A1 (en) * 1997-07-23 1999-01-27 STMicroelectronics S.r.l. High voltage capacitor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797682A (en) * 1980-12-10 1982-06-17 Clarion Co Ltd Variable capacitance device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0033159A3 (en) * 1980-01-29 1981-08-19 Nec Corporation Semiconductor device
EP0070026A3 (de) * 1981-07-15 1985-07-03 Siemens Aktiengesellschaft Anordnung zur Reduzierung der Empfindlichkeit von integrierten Halbleiterspeichern gegen Alpha-Strahlung
FR2526225A1 (fr) * 1982-04-30 1983-11-04 Radiotechnique Compelec Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
FR2530077A1 (fr) * 1982-07-09 1984-01-13 Radiotechnique Compelec Procede de realisation de condensateurs integres dans une structure microelectronique
EP0098671A1 (fr) * 1982-07-09 1984-01-18 R.T.C. LA RADIOTECHNIQUE-COMPELEC Société anonyme dite: Procédé d'isolement par oxydation anodique de portions métalliques entre elles et dispositif obtenu par ce procédé
US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
EP0893831A1 (en) * 1997-07-23 1999-01-27 STMicroelectronics S.r.l. High voltage capacitor
US6188121B1 (en) 1997-07-23 2001-02-13 Sgs-Thomson Microelectronics S.R.L. High voltage capacitor

Also Published As

Publication number Publication date
FR2452790A1 (fr) 1980-10-24
DE2912439A1 (de) 1980-10-16
JPS55146958A (en) 1980-11-15
FR2452790B3 (enExample) 1981-12-31

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)