DE2852776A1 - Feldeffektwiderstand - Google Patents
FeldeffektwiderstandInfo
- Publication number
- DE2852776A1 DE2852776A1 DE19782852776 DE2852776A DE2852776A1 DE 2852776 A1 DE2852776 A1 DE 2852776A1 DE 19782852776 DE19782852776 DE 19782852776 DE 2852776 A DE2852776 A DE 2852776A DE 2852776 A1 DE2852776 A1 DE 2852776A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- field effect
- zones
- substrate
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005669 field effect Effects 0.000 title claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 238000001465 metallisation Methods 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 230000002146 bilateral effect Effects 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims 2
- 238000006388 chemical passivation reaction Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 39
- 230000001052 transient effect Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 239000002355 dual-layer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000036316 preload Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US85804977A | 1977-12-06 | 1977-12-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2852776A1 true DE2852776A1 (de) | 1979-06-13 |
Family
ID=25327353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19782852776 Withdrawn DE2852776A1 (de) | 1977-12-06 | 1978-12-06 | Feldeffektwiderstand |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5483782A (enrdf_load_stackoverflow) |
| CA (1) | CA1132720A (enrdf_load_stackoverflow) |
| DE (1) | DE2852776A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2411492A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2009502B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842269A (ja) * | 1981-09-05 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Ｍｉｓ型可変抵抗器 |
| GB2234392B (en) * | 1985-05-15 | 1991-05-01 | Hughes Aircraft Co | Monolithic high-frequency-signal switch and power limiter device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1040321A (en) * | 1974-07-23 | 1978-10-10 | Alfred C. Ipri | Polycrystalline silicon resistive device for integrated circuits and method for making same |
| US4035757A (en) * | 1975-11-24 | 1977-07-12 | Rca Corporation | Semiconductor device resistors having selected temperature coefficients |
-
1978
- 1978-11-20 GB GB7845243A patent/GB2009502B/en not_active Expired
- 1978-11-22 CA CA000316704A patent/CA1132720A/en not_active Expired
- 1978-11-27 JP JP14643678A patent/JPS5483782A/ja active Pending
- 1978-12-05 FR FR7834217A patent/FR2411492A1/fr active Granted
- 1978-12-06 DE DE19782852776 patent/DE2852776A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2411492A1 (fr) | 1979-07-06 |
| FR2411492B1 (enrdf_load_stackoverflow) | 1983-06-24 |
| JPS5483782A (en) | 1979-07-04 |
| GB2009502B (en) | 1982-03-10 |
| CA1132720A (en) | 1982-09-28 |
| GB2009502A (en) | 1979-06-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |