DE2833921A1 - Ladungsgekoppelte schaltungsanordnung - Google Patents
Ladungsgekoppelte schaltungsanordnungInfo
- Publication number
- DE2833921A1 DE2833921A1 DE19782833921 DE2833921A DE2833921A1 DE 2833921 A1 DE2833921 A1 DE 2833921A1 DE 19782833921 DE19782833921 DE 19782833921 DE 2833921 A DE2833921 A DE 2833921A DE 2833921 A1 DE2833921 A1 DE 2833921A1
- Authority
- DE
- Germany
- Prior art keywords
- charge
- electrode
- input
- voltage
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 39
- 239000002800 charge carrier Substances 0.000 claims description 21
- 238000012546 transfer Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 claims 1
- 239000003415 peat Substances 0.000 claims 1
- 238000007667 floating Methods 0.000 description 52
- 239000003990 capacitor Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 238000005036 potential barrier Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Electrodes Of Semiconductors (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/821,318 US4139784A (en) | 1977-08-02 | 1977-08-02 | CCD Input circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2833921A1 true DE2833921A1 (de) | 1979-02-15 |
| DE2833921C2 DE2833921C2 (US07413550-20080819-C00001.png) | 1989-05-24 |
Family
ID=25233071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19782833921 Granted DE2833921A1 (de) | 1977-08-02 | 1978-08-02 | Ladungsgekoppelte schaltungsanordnung |
Country Status (9)
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2836473A1 (de) * | 1978-08-21 | 1980-03-06 | Siemens Ag | Ccd-eingangsschaltung nach dem fill and spill-prinzip |
| US4278947A (en) * | 1978-09-08 | 1981-07-14 | Bell Telephone Laboratories, Incorporated | Precision frequency source using integrated circuit elements |
| DE2839834A1 (de) * | 1978-09-13 | 1980-03-27 | Siemens Ag | Lineare ausgangsstufe fuer ladungsgekoppelte schaltungen |
| JPS55145367A (en) * | 1979-04-27 | 1980-11-12 | Toshiba Corp | Standard charge level generator for charge transfer device |
| US4389615A (en) * | 1979-08-29 | 1983-06-21 | Rockwell International Corporation | CCD Demodulator circuit |
| US4275315A (en) * | 1979-10-10 | 1981-06-23 | Hughes Aircraft Company | Charge summing filter aperture corrector |
| DE2943143A1 (de) * | 1979-10-25 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung |
| US4321486A (en) * | 1980-02-22 | 1982-03-23 | Honeywell Inc. | Photodetector signal control in charge transfer device imager |
| US4509181A (en) * | 1982-05-28 | 1985-04-02 | Rca Corporation | CCD charge substraction arrangement |
| US4513431A (en) * | 1982-06-07 | 1985-04-23 | International Business Machines Corporation | Charge coupled device output circuit structure |
| US4574384A (en) * | 1982-08-25 | 1986-03-04 | Hitachi, Ltd. | Signal transfer system using a charge transfer device |
| US4524450A (en) * | 1982-09-28 | 1985-06-18 | Rca Corporation | Automatic adjustment of the amplitudes of plural-phase CCD clocking voltages |
| JPS59132669A (ja) * | 1983-01-20 | 1984-07-30 | Sony Corp | 電荷転送装置 |
| EP0143600B1 (en) * | 1983-11-21 | 1991-02-20 | Nec Corporation | A circuit for detecting signal charges transferred in a charge transfer device |
| US5029189A (en) * | 1983-12-09 | 1991-07-02 | Sony Corporation | Input structure for charge coupled devices with controllable input bias |
| JPH0721960B2 (ja) * | 1983-12-09 | 1995-03-08 | ソニー株式会社 | テレビジョン信号の遅延装置 |
| FR2557372B1 (fr) * | 1983-12-27 | 1986-04-11 | Thomson Csf | Procede d'ebasage d'un dispositif photosensible a l'etat solide |
| US5177772A (en) * | 1984-12-06 | 1993-01-05 | Sony Corporation | Charge coupled device with enhanced input structure |
| DD231682A1 (de) * | 1984-12-20 | 1986-01-02 | Werk Fernsehelektronik Veb | Eingangsschaltung fuer ladungsgekoppelte bauelemente |
| NL8500863A (nl) * | 1985-03-25 | 1986-10-16 | Philips Nv | Ladingsoverdrachtinrichting. |
| US4603426A (en) * | 1985-04-04 | 1986-07-29 | Rca Corporation | Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage |
| US4644572A (en) * | 1985-11-12 | 1987-02-17 | Eastman Kodak Company | Fill and spill for charge input to a CCD |
| US5247554A (en) * | 1987-01-16 | 1993-09-21 | Kabushiki Kaisha Toshiba | Charge detection circuit |
| NL8701528A (nl) * | 1987-06-30 | 1989-01-16 | Philips Nv | Halfgeleiderinrichting voozien van een ladingsoverdrachtinrichting. |
| US5210777A (en) * | 1989-04-17 | 1993-05-11 | Sony Corporation | Charge coupled device having switched inverting and non-inverting input signal paths, input biassing circuit and temperature compensation |
| US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
| JPH043436A (ja) * | 1990-04-20 | 1992-01-08 | Fuji Photo Film Co Ltd | Ｃｃｄ遅延線 |
| JP2570464B2 (ja) * | 1990-05-08 | 1997-01-08 | 日本電気株式会社 | 電荷転送装置の電荷検出回路 |
| JPH0821712B2 (ja) * | 1990-06-12 | 1996-03-04 | 株式会社東芝 | 電荷転送素子の入力バイアス回路 |
| US5291083A (en) * | 1993-01-12 | 1994-03-01 | Hewlett-Packard Company | Bucket brigade analog delay line with voltage limiting feedback |
| JP3647390B2 (ja) * | 2000-06-08 | 2005-05-11 | キヤノン株式会社 | 電荷転送装置、固体撮像装置及び撮像システム |
| US7846760B2 (en) * | 2006-05-31 | 2010-12-07 | Kenet, Inc. | Doped plug for CCD gaps |
| US11064142B1 (en) | 2013-09-11 | 2021-07-13 | Varex Imaging Corporation | Imaging system with a digital conversion circuit for generating a digital correlated signal sample and related imaging method |
| EP3044951A4 (en) * | 2013-09-11 | 2017-09-06 | Varex Imaging Corporation | Pixel circuit with constant voltage biased photodiode and related imaging method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2201150A1 (de) * | 1971-01-14 | 1972-08-10 | Rca Corp | Ladungsgekoppelte Halbleiterschaltung |
| US3986198A (en) * | 1973-06-13 | 1976-10-12 | Rca Corporation | Introducing signal at low noise level to charge-coupled circuit |
| DE2800893A1 (de) * | 1977-01-10 | 1978-07-13 | Rca Corp | Verfahren und einrichtung zur eingabe von signalen in eine ladungsgekoppelte anordnung |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
| US3660697A (en) * | 1970-02-16 | 1972-05-02 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
| JPS5649397B2 (US07413550-20080819-C00001.png) * | 1974-02-18 | 1981-11-21 | ||
| US4047051A (en) * | 1975-10-24 | 1977-09-06 | International Business Machines Corporation | Method and apparatus for replicating a charge packet |
| US4071775A (en) * | 1976-04-02 | 1978-01-31 | Texas Instruments Incorporated | Charge coupled differential amplifier for transversal filter |
| US4040077A (en) * | 1976-08-18 | 1977-08-02 | Honeywell Information Systems, Inc. | Time-independent ccd charge amplifier |
-
1977
- 1977-08-02 US US05/821,318 patent/US4139784A/en not_active Ceased
-
1978
- 1978-07-10 SE SE7807686A patent/SE438218B/sv not_active IP Right Cessation
- 1978-07-14 IT IT25708/78A patent/IT1097954B/it active
- 1978-07-28 CA CA000308410A patent/CA1120588A/en not_active Expired
- 1978-08-01 GB GB8024587A patent/GB2070855B/en not_active Expired
- 1978-08-01 NL NL787808105A patent/NL7808105A/xx not_active Application Discontinuation
- 1978-08-01 JP JP9447078A patent/JPS5427779A/ja active Granted
- 1978-08-01 GB GB7831846A patent/GB2002173B/en not_active Expired
- 1978-08-02 FR FR7822870A patent/FR2399739A1/fr active Granted
- 1978-08-02 DE DE19782833921 patent/DE2833921A1/de active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2201150A1 (de) * | 1971-01-14 | 1972-08-10 | Rca Corp | Ladungsgekoppelte Halbleiterschaltung |
| US3986198A (en) * | 1973-06-13 | 1976-10-12 | Rca Corporation | Introducing signal at low noise level to charge-coupled circuit |
| DE2800893A1 (de) * | 1977-01-10 | 1978-07-13 | Rca Corp | Verfahren und einrichtung zur eingabe von signalen in eine ladungsgekoppelte anordnung |
Non-Patent Citations (2)
| Title |
|---|
| DE-Z.: Elektronik 1972, H. 4, S. 119-122 * |
| US-Z.: IEEE Journal of Solid-State Circuits Bd. SC-11, 1976, Nr. 1, S. 10-18 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1120588A (en) | 1982-03-23 |
| IT1097954B (it) | 1985-08-31 |
| GB2070855B (en) | 1982-10-13 |
| JPS576704B2 (US07413550-20080819-C00001.png) | 1982-02-06 |
| IT7825708A0 (it) | 1978-07-14 |
| SE438218B (sv) | 1985-04-01 |
| US4139784A (en) | 1979-02-13 |
| FR2399739B1 (US07413550-20080819-C00001.png) | 1983-08-05 |
| SE7807686L (sv) | 1979-02-03 |
| GB2002173A (en) | 1979-02-14 |
| NL7808105A (nl) | 1979-02-06 |
| FR2399739A1 (fr) | 1979-03-02 |
| JPS5427779A (en) | 1979-03-02 |
| GB2070855A (en) | 1981-09-09 |
| GB2002173B (en) | 1982-03-31 |
| DE2833921C2 (US07413550-20080819-C00001.png) | 1989-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |