SE7807686L - Laddningskopplad anordning - Google Patents

Laddningskopplad anordning

Info

Publication number
SE7807686L
SE7807686L SE7807686A SE7807686A SE7807686L SE 7807686 L SE7807686 L SE 7807686L SE 7807686 A SE7807686 A SE 7807686A SE 7807686 A SE7807686 A SE 7807686A SE 7807686 L SE7807686 L SE 7807686L
Authority
SE
Sweden
Prior art keywords
coupled device
charging coupled
charging
coupled
Prior art date
Application number
SE7807686A
Other languages
English (en)
Other versions
SE438218B (sv
Inventor
D J Sauer
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7807686L publication Critical patent/SE7807686L/sv
Publication of SE438218B publication Critical patent/SE438218B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Networks Using Active Elements (AREA)
SE7807686A 1977-08-02 1978-07-10 Reglerkrets med ett halvledarsubstrat, i vilket ett elektriskt flytande omrade er placerat SE438218B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/821,318 US4139784A (en) 1977-08-02 1977-08-02 CCD Input circuits

Publications (2)

Publication Number Publication Date
SE7807686L true SE7807686L (sv) 1979-02-03
SE438218B SE438218B (sv) 1985-04-01

Family

ID=25233071

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7807686A SE438218B (sv) 1977-08-02 1978-07-10 Reglerkrets med ett halvledarsubstrat, i vilket ett elektriskt flytande omrade er placerat

Country Status (9)

Country Link
US (1) US4139784A (sv)
JP (1) JPS5427779A (sv)
CA (1) CA1120588A (sv)
DE (1) DE2833921A1 (sv)
FR (1) FR2399739A1 (sv)
GB (2) GB2070855B (sv)
IT (1) IT1097954B (sv)
NL (1) NL7808105A (sv)
SE (1) SE438218B (sv)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2836473A1 (de) * 1978-08-21 1980-03-06 Siemens Ag Ccd-eingangsschaltung nach dem fill and spill-prinzip
US4278947A (en) * 1978-09-08 1981-07-14 Bell Telephone Laboratories, Incorporated Precision frequency source using integrated circuit elements
DE2839834A1 (de) * 1978-09-13 1980-03-27 Siemens Ag Lineare ausgangsstufe fuer ladungsgekoppelte schaltungen
JPS55145368A (en) * 1979-04-27 1980-11-12 Toshiba Corp Charge transfer device
US4389615A (en) * 1979-08-29 1983-06-21 Rockwell International Corporation CCD Demodulator circuit
US4275315A (en) * 1979-10-10 1981-06-23 Hughes Aircraft Company Charge summing filter aperture corrector
DE2943143A1 (de) * 1979-10-25 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung
US4321486A (en) * 1980-02-22 1982-03-23 Honeywell Inc. Photodetector signal control in charge transfer device imager
US4509181A (en) * 1982-05-28 1985-04-02 Rca Corporation CCD charge substraction arrangement
US4513431A (en) * 1982-06-07 1985-04-23 International Business Machines Corporation Charge coupled device output circuit structure
US4574384A (en) * 1982-08-25 1986-03-04 Hitachi, Ltd. Signal transfer system using a charge transfer device
US4524450A (en) * 1982-09-28 1985-06-18 Rca Corporation Automatic adjustment of the amplitudes of plural-phase CCD clocking voltages
JPS59132669A (ja) * 1983-01-20 1984-07-30 Sony Corp 電荷転送装置
EP0143600B1 (en) * 1983-11-21 1991-02-20 Nec Corporation A circuit for detecting signal charges transferred in a charge transfer device
JPH0721960B2 (ja) * 1983-12-09 1995-03-08 ソニー株式会社 テレビジョン信号の遅延装置
US5029189A (en) * 1983-12-09 1991-07-02 Sony Corporation Input structure for charge coupled devices with controllable input bias
FR2557372B1 (fr) * 1983-12-27 1986-04-11 Thomson Csf Procede d'ebasage d'un dispositif photosensible a l'etat solide
US5177772A (en) * 1984-12-06 1993-01-05 Sony Corporation Charge coupled device with enhanced input structure
DD231682A1 (de) * 1984-12-20 1986-01-02 Werk Fernsehelektronik Veb Eingangsschaltung fuer ladungsgekoppelte bauelemente
NL8500863A (nl) * 1985-03-25 1986-10-16 Philips Nv Ladingsoverdrachtinrichting.
US4603426A (en) * 1985-04-04 1986-07-29 Rca Corporation Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage
US4644572A (en) * 1985-11-12 1987-02-17 Eastman Kodak Company Fill and spill for charge input to a CCD
US5247554A (en) * 1987-01-16 1993-09-21 Kabushiki Kaisha Toshiba Charge detection circuit
NL8701528A (nl) * 1987-06-30 1989-01-16 Philips Nv Halfgeleiderinrichting voozien van een ladingsoverdrachtinrichting.
US5210777A (en) * 1989-04-17 1993-05-11 Sony Corporation Charge coupled device having switched inverting and non-inverting input signal paths, input biassing circuit and temperature compensation
US5182623A (en) * 1989-11-13 1993-01-26 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
JPH043436A (ja) * 1990-04-20 1992-01-08 Fuji Photo Film Co Ltd Ｃｃｄ遅延線
JP2570464B2 (ja) * 1990-05-08 1997-01-08 日本電気株式会社 電荷転送装置の電荷検出回路
JPH0821712B2 (ja) * 1990-06-12 1996-03-04 株式会社東芝 電荷転送素子の入力バイアス回路
US5291083A (en) * 1993-01-12 1994-03-01 Hewlett-Packard Company Bucket brigade analog delay line with voltage limiting feedback
JP3647390B2 (ja) * 2000-06-08 2005-05-11 キヤノン株式会社 電荷転送装置、固体撮像装置及び撮像システム
US7846760B2 (en) * 2006-05-31 2010-12-07 Kenet, Inc. Doped plug for CCD gaps
US9380239B2 (en) * 2013-09-11 2016-06-28 Varian Medical Systems, Inc. Pixel circuit with constant voltage biased photodiode and related imaging method
US11064142B1 (en) 2013-09-11 2021-07-13 Varex Imaging Corporation Imaging system with a digital conversion circuit for generating a digital correlated signal sample and related imaging method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3986198A (en) * 1973-06-13 1976-10-12 Rca Corporation Introducing signal at low noise level to charge-coupled circuit
JPS5649397B2 (sv) * 1974-02-18 1981-11-21
US4047051A (en) * 1975-10-24 1977-09-06 International Business Machines Corporation Method and apparatus for replicating a charge packet
US4071775A (en) * 1976-04-02 1978-01-31 Texas Instruments Incorporated Charge coupled differential amplifier for transversal filter
US4040077A (en) * 1976-08-18 1977-08-02 Honeywell Information Systems, Inc. Time-independent ccd charge amplifier
AU511885B2 (en) * 1977-01-10 1980-09-11 Rca Corp. Linear ccd input circuit

Also Published As

Publication number Publication date
GB2070855A (en) 1981-09-09
JPS5427779A (en) 1979-03-02
IT7825708A0 (it) 1978-07-14
DE2833921C2 (sv) 1989-05-24
GB2002173B (en) 1982-03-31
CA1120588A (en) 1982-03-23
GB2002173A (en) 1979-02-14
GB2070855B (en) 1982-10-13
JPS576704B2 (sv) 1982-02-06
FR2399739A1 (fr) 1979-03-02
SE438218B (sv) 1985-04-01
NL7808105A (nl) 1979-02-06
FR2399739B1 (sv) 1983-08-05
DE2833921A1 (de) 1979-02-15
US4139784A (en) 1979-02-13
IT1097954B (it) 1985-08-31

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