DE2828742A1 - Verfahren zur herstellung von gesinterten, polykristallinen kubischen bornitridpresslingen - Google Patents

Verfahren zur herstellung von gesinterten, polykristallinen kubischen bornitridpresslingen

Info

Publication number
DE2828742A1
DE2828742A1 DE19782828742 DE2828742A DE2828742A1 DE 2828742 A1 DE2828742 A1 DE 2828742A1 DE 19782828742 DE19782828742 DE 19782828742 DE 2828742 A DE2828742 A DE 2828742A DE 2828742 A1 DE2828742 A1 DE 2828742A1
Authority
DE
Germany
Prior art keywords
compact
boron nitride
cell
pbn
compacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19782828742
Other languages
German (de)
English (en)
Other versions
DE2828742C2 (enExample
Inventor
Francis Raymond Corrigan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/812,283 external-priority patent/US4188194A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2828742A1 publication Critical patent/DE2828742A1/de
Application granted granted Critical
Publication of DE2828742C2 publication Critical patent/DE2828742C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/0645—Boronitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/066—Boronitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE19782828742 1977-07-01 1978-06-30 Verfahren zur herstellung von gesinterten, polykristallinen kubischen bornitridpresslingen Granted DE2828742A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/812,283 US4188194A (en) 1976-10-29 1977-07-01 Direct conversion process for making cubic boron nitride from pyrolytic boron nitride

Publications (2)

Publication Number Publication Date
DE2828742A1 true DE2828742A1 (de) 1979-03-01
DE2828742C2 DE2828742C2 (enExample) 1989-02-02

Family

ID=25209106

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782828742 Granted DE2828742A1 (de) 1977-07-01 1978-06-30 Verfahren zur herstellung von gesinterten, polykristallinen kubischen bornitridpresslingen

Country Status (20)

Country Link
JP (1) JPS5433510A (enExample)
AT (1) AT395144B (enExample)
AU (1) AU524584B2 (enExample)
BE (1) BE868653A (enExample)
BR (1) BR7804310A (enExample)
CH (1) CH644091A5 (enExample)
DE (1) DE2828742A1 (enExample)
DK (1) DK298578A (enExample)
ES (1) ES471333A1 (enExample)
FR (1) FR2395948A1 (enExample)
GB (1) GB2002333B (enExample)
IE (1) IE47548B1 (enExample)
IL (1) IL54939A0 (enExample)
IN (1) IN150013B (enExample)
IT (1) IT1096850B (enExample)
MX (1) MX149093A (enExample)
NL (1) NL186506C (enExample)
NO (1) NO153603C (enExample)
SE (1) SE447241B (enExample)
ZA (1) ZA783449B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022177A1 (en) * 1979-06-11 1981-01-14 General Electric Company Process and apparatus for making cubic boron nitride from powdered hexagonal boron nitride
DE3125484A1 (de) * 1981-06-29 1983-03-17 Belorusskij politechničeskij institut, Minsk Verfahren zur herstellung von polykristallen eines aus dichten modifikationen bestehenden bornitrides
EP0102472B1 (de) * 1982-08-11 1986-06-04 Dr. Johannes Heidenhain GmbH Längen- oder Winkelmesseinrichtung
WO2009088471A1 (en) * 2007-12-31 2009-07-16 Momentive Performance Materials Inc. Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3584515D1 (de) * 1985-01-11 1991-11-28 Sumitomo Electric Industries Waermesenke unter verwendung eines gesinterten koerpers mit hoher waermeleitfaehigkeit und verfahren zu ihrer herstellung.
EP0221531A3 (en) * 1985-11-06 1992-02-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha High heat conductive insulated substrate and method of manufacturing the same
JPS62108717A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108713A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108714A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108715A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108716A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
JPS62108711A (ja) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk 立方晶窒化ほう素の製造方法
DE3774744D1 (de) * 1986-04-09 1992-01-09 Sumitomo Electric Industries Verfahren zur herstellung von kompakten sinterkoerpern aus kubischem bornitrid.
JPH0339795U (enExample) * 1989-04-19 1991-04-17
US5015265A (en) * 1989-06-14 1991-05-14 General Electric Company Process for making cubic boron nitride from coated hexagonal boron nitride, and abrasive particles and articles made therefrom
DE4204009C2 (de) * 1992-02-12 1994-09-15 Goelz Siegfried Fa Verfahren zur Herstellung von amorphem ultrahartem Bornitrid und nach dem Verfahren hergestelltes Bornitrid
JPH07104739A (ja) * 1993-10-01 1995-04-21 Maruyasu Kanagata:Kk 大正琴
JPH10158065A (ja) * 1996-11-28 1998-06-16 Sumitomo Electric Ind Ltd 立方晶窒化ホウ素焼結体およびその製造方法
WO2009082816A1 (en) * 2007-12-31 2009-07-09 Rafael Nathan Kleiman High efficiency silicon-based solar cells
CN103764597A (zh) 2011-08-30 2014-04-30 住友电气工业株式会社 立方氮化硼复合多晶体及其制造方法、以及切削工具、拉丝模具和研磨工具
JP6159064B2 (ja) * 2012-08-08 2017-07-05 住友電気工業株式会社 立方晶窒化ホウ素複合多結晶体及び切削工具、線引きダイス、ならびに研削工具
JP5929655B2 (ja) * 2012-09-11 2016-06-08 住友電気工業株式会社 立方晶窒化ホウ素複合多結晶体およびその製造方法、切削工具、ならびに耐摩工具
JP6291995B2 (ja) 2014-04-18 2018-03-14 住友電気工業株式会社 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法
JP6447197B2 (ja) 2015-02-04 2019-01-09 住友電気工業株式会社 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法
JP6447205B2 (ja) 2015-02-09 2019-01-09 住友電気工業株式会社 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法
JP6978445B2 (ja) * 2016-06-29 2021-12-08 スミス インターナショナル インコーポレイテッド 立方プレスによるバインダーレスｃＢＮ焼結
WO2018066261A1 (ja) 2016-10-06 2018-04-12 住友電気工業株式会社 窒化ホウ素多結晶体の製造方法、窒化ホウ素多結晶体、切削工具、耐摩工具および研削工具
CN112334434B (zh) * 2018-06-18 2023-06-30 住友电工硬质合金株式会社 多晶立方氮化硼及其制造方法
US20220041446A1 (en) * 2018-09-27 2022-02-10 Sumitomo Electric Hardmetal Corp. Polycrystalline cubic boron nitride and method for manufacturing the same
WO2020174922A1 (ja) * 2019-02-28 2020-09-03 住友電工ハードメタル株式会社 立方晶窒化硼素多結晶体及びその製造方法
WO2020174923A1 (ja) * 2019-02-28 2020-09-03 住友電工ハードメタル株式会社 立方晶窒化硼素多結晶体及びその製造方法
EP3932890A4 (en) * 2019-02-28 2022-04-27 Sumitomo Electric Hardmetal Corp. POLYCRYSTALLINE CUBIC BORON NITRIDE AND METHOD FOR PRODUCTION
JP7319482B2 (ja) * 2021-08-26 2023-08-01 デンカ株式会社 セラミックス板の製造方法、セラミックス板、複合シート、及び積層基板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3578403A (en) * 1968-07-05 1971-05-11 Union Carbide Corp Recrystallization of pyrolytic boron nitride
GB1317716A (en) * 1971-03-09 1973-05-23 Inst Fiz Tverdogo Tela I Polup Method of producing cubic boron nitride

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA724056B (en) * 1971-07-01 1973-03-28 Gen Electric Catalyst systems for synthesis of cubic boron nitride
JPS5238049B2 (enExample) * 1972-02-04 1977-09-27
JPS5647124B2 (enExample) * 1973-06-26 1981-11-07
CA1006328A (en) * 1973-09-06 1977-03-08 General Electric Company Large boron nitride abrasive particles
JPS5760676B2 (enExample) * 1973-09-28 1982-12-21 Tokyo Shibaura Electric Co
JPS5061413A (enExample) * 1973-10-01 1975-05-27
JPS5750677Y2 (enExample) * 1973-12-05 1982-11-05
JPS5116196A (ja) * 1974-07-29 1976-02-09 Hitachi Ltd Kokanyorotsukakuketsusokusochi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3578403A (en) * 1968-07-05 1971-05-11 Union Carbide Corp Recrystallization of pyrolytic boron nitride
GB1317716A (en) * 1971-03-09 1973-05-23 Inst Fiz Tverdogo Tela I Polup Method of producing cubic boron nitride

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022177A1 (en) * 1979-06-11 1981-01-14 General Electric Company Process and apparatus for making cubic boron nitride from powdered hexagonal boron nitride
DE3125484A1 (de) * 1981-06-29 1983-03-17 Belorusskij politechničeskij institut, Minsk Verfahren zur herstellung von polykristallen eines aus dichten modifikationen bestehenden bornitrides
EP0102472B1 (de) * 1982-08-11 1986-06-04 Dr. Johannes Heidenhain GmbH Längen- oder Winkelmesseinrichtung
WO2009088471A1 (en) * 2007-12-31 2009-07-16 Momentive Performance Materials Inc. Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
CN101952226A (zh) * 2007-12-31 2011-01-19 迈图高新材料公司 低导热系数低密度热解氮化硼材料、其制造方法和由其制造的制品

Also Published As

Publication number Publication date
BR7804310A (pt) 1979-04-17
ZA783449B (en) 1980-04-30
ATA477478A (de) 1992-02-15
NL186506C (nl) 1990-12-17
IT1096850B (it) 1985-08-26
BE868653A (fr) 1978-10-16
AU524584B2 (en) 1982-09-23
AT395144B (de) 1992-09-25
FR2395948B1 (enExample) 1984-03-23
NL186506B (nl) 1990-07-16
GB2002333B (en) 1982-05-26
DK298578A (da) 1979-01-02
IE47548B1 (en) 1984-04-18
IN150013B (enExample) 1982-06-26
IL54939A0 (en) 1978-08-31
JPS63394B2 (enExample) 1988-01-06
AU3761978A (en) 1980-01-03
ES471333A1 (es) 1979-10-01
FR2395948A1 (fr) 1979-01-26
MX149093A (es) 1983-08-24
NO153603C (no) 1986-04-23
NO153603B (no) 1986-01-13
CH644091A5 (de) 1984-07-13
IT7825186A0 (it) 1978-06-30
IE781320L (en) 1979-01-01
DE2828742C2 (enExample) 1989-02-02
GB2002333A (en) 1979-02-21
JPS5433510A (en) 1979-03-12
NO782272L (no) 1979-01-03
SE447241B (sv) 1986-11-03
NL7807196A (nl) 1979-01-03

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Ipc: C04B 35/58

D2 Grant after examination
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8328 Change in the person/name/address of the agent

Free format text: SIEB, R., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 6947 LAUDENBACH