DE2828605C3 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE2828605C3
DE2828605C3 DE2828605A DE2828605A DE2828605C3 DE 2828605 C3 DE2828605 C3 DE 2828605C3 DE 2828605 A DE2828605 A DE 2828605A DE 2828605 A DE2828605 A DE 2828605A DE 2828605 C3 DE2828605 C3 DE 2828605C3
Authority
DE
Germany
Prior art keywords
resistance
layers
layer
semiconductor device
resistance layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2828605A
Other languages
German (de)
English (en)
Other versions
DE2828605B2 (de
DE2828605A1 (de
Inventor
Satoshi Tokyo Takahashi
Masao Yokohama Wakatsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7646577A external-priority patent/JPS5412281A/ja
Priority claimed from JP8359577A external-priority patent/JPS5419380A/ja
Priority claimed from JP8359177A external-priority patent/JPS5419378A/ja
Priority claimed from JP8359377A external-priority patent/JPS5439583A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2828605A1 publication Critical patent/DE2828605A1/de
Publication of DE2828605B2 publication Critical patent/DE2828605B2/de
Application granted granted Critical
Publication of DE2828605C3 publication Critical patent/DE2828605C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Non-Adjustable Resistors (AREA)
DE2828605A 1977-06-29 1978-06-29 Halbleitervorrichtung Expired DE2828605C3 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7646577A JPS5412281A (en) 1977-06-29 1977-06-29 Semiconductor device
JP8359577A JPS5419380A (en) 1977-07-14 1977-07-14 Semiconductor device
JP8359177A JPS5419378A (en) 1977-07-14 1977-07-14 Semiconductor device
JP8359377A JPS5439583A (en) 1977-07-14 1977-07-14 Semicunductor device

Publications (3)

Publication Number Publication Date
DE2828605A1 DE2828605A1 (de) 1979-01-04
DE2828605B2 DE2828605B2 (de) 1981-04-30
DE2828605C3 true DE2828605C3 (de) 1982-01-14

Family

ID=27465948

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2828605A Expired DE2828605C3 (de) 1977-06-29 1978-06-29 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US4236832A (OSRAM)
DE (1) DE2828605C3 (OSRAM)
FR (1) FR2396417A1 (OSRAM)
GB (1) GB2000639B (OSRAM)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396418A1 (fr) * 1977-06-29 1979-01-26 Tokyo Shibaura Electric Co Dispositif a semi-conducteurs integre dont les caracteristiques ne sont pas alterees par l'encapsulage
JPS5688350A (en) * 1979-12-19 1981-07-17 Toshiba Corp Semiconductor device
DE3001772A1 (de) * 1980-01-18 1981-07-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
JPS56122134A (en) * 1980-02-29 1981-09-25 Toshiba Corp Resin-sealed type semiconductor device
US5552639A (en) * 1980-09-01 1996-09-03 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5371411A (en) * 1980-09-01 1994-12-06 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
JPS5925260A (ja) * 1982-08-02 1984-02-09 Fujitsu Ltd 半導体装置
JP3171240B2 (ja) * 1998-01-13 2001-05-28 日本電気株式会社 抵抗素子、それを用いた半導体装置およびこれらの製造方法
DE10154497A1 (de) * 2001-11-07 2003-05-15 Infineon Technologies Ag Integrierter Widerstand
DE102006061721B4 (de) * 2006-12-28 2016-12-29 Infineon Technologies Ag Kompensationsgrößen-Bereitstellungsschaltung, Spannungs-Kompensationsschaltung, spannungskompensierte Schaltung, Vorrichtung zur Bereitstellung einer Kompensationsgröße, Verfahren zum Bereitstellen einer Kompensationsgröße und Ring-Oszillator
US9823090B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a target object
US7923996B2 (en) * 2008-02-26 2011-04-12 Allegro Microsystems, Inc. Magnetic field sensor with automatic sensitivity adjustment
WO2010096367A1 (en) 2009-02-17 2010-08-26 Allegro Microsystems, Inc. Circuits and methods for generating a self-test of a magnetic field sensor
EP2634592B1 (en) * 2009-07-22 2015-01-14 Allegro Microsystems, LLC Circuits and methods for generating a diagnostic mode of operation in a magnetic field sensor
US8680846B2 (en) 2011-04-27 2014-03-25 Allegro Microsystems, Llc Circuits and methods for self-calibrating or self-testing a magnetic field sensor
US8604777B2 (en) 2011-07-13 2013-12-10 Allegro Microsystems, Llc Current sensor with calibration for a current divider configuration
US9201122B2 (en) 2012-02-16 2015-12-01 Allegro Microsystems, Llc Circuits and methods using adjustable feedback for self-calibrating or self-testing a magnetic field sensor with an adjustable time constant
US9817078B2 (en) 2012-05-10 2017-11-14 Allegro Microsystems Llc Methods and apparatus for magnetic sensor having integrated coil
US9383425B2 (en) 2012-12-28 2016-07-05 Allegro Microsystems, Llc Methods and apparatus for a current sensor having fault detection and self test functionality
US10725100B2 (en) 2013-03-15 2020-07-28 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an externally accessible coil
US9810519B2 (en) 2013-07-19 2017-11-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as tooth detectors
US10495699B2 (en) 2013-07-19 2019-12-03 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target
US10145908B2 (en) 2013-07-19 2018-12-04 Allegro Microsystems, Llc Method and apparatus for magnetic sensor producing a changing magnetic field
US9910088B2 (en) 2013-12-26 2018-03-06 Allegro Microsystems, Llc Methods and apparatus for sensor diagnostics including programmable self-test signals
US9645220B2 (en) 2014-04-17 2017-05-09 Allegro Microsystems, Llc Circuits and methods for self-calibrating or self-testing a magnetic field sensor using phase discrimination
US9735773B2 (en) 2014-04-29 2017-08-15 Allegro Microsystems, Llc Systems and methods for sensing current through a low-side field effect transistor
US9739846B2 (en) 2014-10-03 2017-08-22 Allegro Microsystems, Llc Magnetic field sensors with self test
US9823092B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
US10712403B2 (en) 2014-10-31 2020-07-14 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
US9720054B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
US9719806B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a ferromagnetic target object
US10466298B2 (en) 2014-11-14 2019-11-05 Allegro Microsystems, Llc Magnetic field sensor with shared path amplifier and analog-to-digital-converter
US9804249B2 (en) 2014-11-14 2017-10-31 Allegro Microsystems, Llc Dual-path analog to digital converter
US9841485B2 (en) 2014-11-14 2017-12-12 Allegro Microsystems, Llc Magnetic field sensor having calibration circuitry and techniques
US9638764B2 (en) 2015-04-08 2017-05-02 Allegro Microsystems, Llc Electronic circuit for driving a hall effect element with a current compensated for substrate stress
US9719874B2 (en) 2015-06-30 2017-08-01 Stmicroelectronics S.R.L. Pressure sensor device for measuring a differential normal pressure to the device and related methods
US9704624B2 (en) 2015-06-30 2017-07-11 Stmicroelectronics S.R.L. Integrated circuit (IC) including semiconductor resistor and resistance compensation circuit and related methods
US9851417B2 (en) 2015-07-28 2017-12-26 Allegro Microsystems, Llc Structure and system for simultaneous sensing a magnetic field and mechanical stress
US10107873B2 (en) 2016-03-10 2018-10-23 Allegro Microsystems, Llc Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress
US10132879B2 (en) 2016-05-23 2018-11-20 Allegro Microsystems, Llc Gain equalization for multiple axis magnetic field sensing
US10260905B2 (en) 2016-06-08 2019-04-16 Allegro Microsystems, Llc Arrangements for magnetic field sensors to cancel offset variations
US10012518B2 (en) 2016-06-08 2018-07-03 Allegro Microsystems, Llc Magnetic field sensor for sensing a proximity of an object
US10041810B2 (en) 2016-06-08 2018-08-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as movement detectors
US10162017B2 (en) 2016-07-12 2018-12-25 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
US10996289B2 (en) 2017-05-26 2021-05-04 Allegro Microsystems, Llc Coil actuated position sensor with reflected magnetic field
US10310028B2 (en) 2017-05-26 2019-06-04 Allegro Microsystems, Llc Coil actuated pressure sensor
US11428755B2 (en) 2017-05-26 2022-08-30 Allegro Microsystems, Llc Coil actuated sensor with sensitivity detection
US10641842B2 (en) 2017-05-26 2020-05-05 Allegro Microsystems, Llc Targets for coil actuated position sensors
US10837943B2 (en) 2017-05-26 2020-11-17 Allegro Microsystems, Llc Magnetic field sensor with error calculation
US10324141B2 (en) 2017-05-26 2019-06-18 Allegro Microsystems, Llc Packages for coil actuated position sensors
US10520559B2 (en) 2017-08-14 2019-12-31 Allegro Microsystems, Llc Arrangements for Hall effect elements and vertical epi resistors upon a substrate
US10866117B2 (en) 2018-03-01 2020-12-15 Allegro Microsystems, Llc Magnetic field influence during rotation movement of magnetic target
US11255700B2 (en) 2018-08-06 2022-02-22 Allegro Microsystems, Llc Magnetic field sensor
US10823586B2 (en) 2018-12-26 2020-11-03 Allegro Microsystems, Llc Magnetic field sensor having unequally spaced magnetic field sensing elements
US11061084B2 (en) 2019-03-07 2021-07-13 Allegro Microsystems, Llc Coil actuated pressure sensor and deflectable substrate
US10955306B2 (en) 2019-04-22 2021-03-23 Allegro Microsystems, Llc Coil actuated pressure sensor and deformable substrate
US11237020B2 (en) 2019-11-14 2022-02-01 Allegro Microsystems, Llc Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet
US11280637B2 (en) 2019-11-14 2022-03-22 Allegro Microsystems, Llc High performance magnetic angle sensor
US11194004B2 (en) 2020-02-12 2021-12-07 Allegro Microsystems, Llc Diagnostic circuits and methods for sensor test circuits
US11169223B2 (en) 2020-03-23 2021-11-09 Allegro Microsystems, Llc Hall element signal calibrating in angle sensor
US11262422B2 (en) 2020-05-08 2022-03-01 Allegro Microsystems, Llc Stray-field-immune coil-activated position sensor
US11493361B2 (en) 2021-02-26 2022-11-08 Allegro Microsystems, Llc Stray field immune coil-activated sensor
US11630130B2 (en) 2021-03-31 2023-04-18 Allegro Microsystems, Llc Channel sensitivity matching
US11578997B1 (en) 2021-08-24 2023-02-14 Allegro Microsystems, Llc Angle sensor using eddy currents
US11994541B2 (en) 2022-04-15 2024-05-28 Allegro Microsystems, Llc Current sensor assemblies for low currents
US12510611B2 (en) 2023-11-07 2025-12-30 Allegro Microsystems, Llc TMR sensor having magnetic field generation for pillar stimulation
US12455301B2 (en) 2023-12-11 2025-10-28 Allegro Microsystems, Llc Hall plate current sensor having stress compensation
US12523717B2 (en) 2024-02-15 2026-01-13 Allegro Microsystems, Llc Closed loop magnetic field sensor with current control

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3186217A (en) * 1960-12-02 1965-06-01 Bell Telephone Labor Inc Piezoresistive stress transducer
US3270554A (en) * 1961-01-04 1966-09-06 Bell Telephone Labor Inc Diffused layer transducers
US3137834A (en) * 1961-03-17 1964-06-16 Bell Telephone Labor Inc Piezoresistive stress gages
GB997394A (en) * 1961-04-25 1965-07-07 Western Electric Co Improvements in and relating to piezoresistive semiconductor strain gauges
DE1465112A1 (de) * 1963-10-04 1969-01-23 Anritsu Electric Company Ltd Im Vakuum niedergeschlagene Halbleiterschichten fuer Elasto-Widerstandselemente
GB1094862A (en) * 1964-03-31 1967-12-13 Ether Eng Ltd Improvements in and relating to strain gauges
US3456226A (en) * 1967-10-27 1969-07-15 Conrac Corp Strain gage configuration
GB1249317A (en) * 1968-11-19 1971-10-13 Mullard Ltd Semiconductor devices
US3641812A (en) * 1970-05-20 1972-02-15 Conrac Corp Silicon diaphragm with integral bridge transducer
US3705993A (en) * 1970-07-16 1972-12-12 Inst Fizica Piezoresistive transducers and devices with semiconducting films and their manufacturing process
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
JPS561789B2 (OSRAM) * 1974-04-26 1981-01-16
GB1472294A (en) * 1974-12-18 1977-05-04 Welwyn Electric Ltd Strain measuring device
US3965453A (en) * 1974-12-27 1976-06-22 Bell Telephone Laboratories, Incorporated Piezoresistor effects in semiconductor resistors

Also Published As

Publication number Publication date
US4236832A (en) 1980-12-02
FR2396417B1 (OSRAM) 1983-01-21
DE2828605B2 (de) 1981-04-30
DE2828605A1 (de) 1979-01-04
FR2396417A1 (fr) 1979-01-26
GB2000639A (en) 1979-01-10
GB2000639B (en) 1982-03-31

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8328 Change in the person/name/address of the agent

Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN

8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee