DE1196299B - Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung - Google Patents

Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung

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Publication number
DE1196299B
DE1196299B DE19601196299D DE1196299DA DE1196299B DE 1196299 B DE1196299 B DE 1196299B DE 19601196299 D DE19601196299 D DE 19601196299D DE 1196299D A DE1196299D A DE 1196299DA DE 1196299 B DE1196299 B DE 1196299B
Authority
DE
Germany
Prior art keywords
circuit arrangement
circuit elements
resistor
arrangement according
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19601196299D
Other languages
English (en)
Other versions
DE1196299C2 (de
Inventor
Jack S Kilby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
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Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27408060&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE1196299(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1196299B publication Critical patent/DE1196299B/de
Application granted granted Critical
Publication of DE1196299C2 publication Critical patent/DE1196299C2/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
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    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Description

BUNDESREPUBLIK DEUTSCHLAND
DEUTSCHES
PATENTAMT
AUSLEGESCHRIFT
Int. α.:
HOIl
Deutsche KL: 21g-11/02
Nummer: 1196 299
Aktenzeichen: T 27616 VIII c/21 g
Anmeldetag: 5. Februar 1960
Auslegetag: 8. Juli 1965
Die Erfindung bezieht sich auf eine mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung mit einem Halbleiterplättchen, in dem oder auf dem mehrere aktive und/oder passive elektrische Schaltungselemente gebildet sind, sowie auf ein Verfahren zu ihrer Herstellung.
Zur Miniaturisierung von Schaltungsanordnungen ist bereits der theoretische Vorschlag bekannt, einen Siliziumblock so zu dotieren und zu formen, daß er vier normalen Transistoren und vier Widerständen äquivalent ist, wobei den Transistoren zwei Emitterzonen und zwei Kollektorzonen gemeinsam sind. Weitere Widerstände und Kondensatoren sind unter Einfügung von isolierenden Schichten in Form von Filmen unmittelbar so auf dem Siliziumblock gebildet, daß alle Schaltungselemente zusammen einen Multivibrator bilden. Zu diesem Zweck sind parallel zu der Ober- und Unterseite des Siliziumblocks zwei pn-Übergänge gebildet, die sich zu den Seitenflächen des Blocks erstrecken. Zur gegenseitigen Trennung der einzelnen Transistoren und Widerstände sind Durchbohrungen von den Seitenflächen her quer durch den Block sowie verschiedene Einschnitte gebildet, so daß schließlich die vier Ecken des Blocks je einen Transistor darstellen, deren Kollektor- und Emitterzonen zum Teil durch stehengebliebene Siliziumbrücken verbunden sind, welche die Rolle von Widerständen bilden. Zur Vervollständigung der Schaltung sind Kontakte an den verschiedenen Flächen des Blocks, einschließlich der Seitenflächen, sowie Verbindungsleiter zu den aufgebrachten filmförmigen Schaltungselementen angebracht.
Die bei diesem geplanten Multivibrator zur Trennung der Schaltungselemente erforderliche mechanische Herstellung von Einschnitten und Durchbohrangen ist um so schwieriger, je kleiner die Abmessungen des Halbleiterblocks sind. Der Miniaturisierung sind dadurch Grenzen gesetzt. Ferner ist die Zahl der Schaltungselemente begrenzt, die auf diese Weise voneinander getrennt werden können, und die zu trennenden Schaltungselemente müssen auch in bestimmter Anordnung vorliegen, damit die Einschnitte und Durchbohrungen angebracht werden können, ohne daß die mechanische Festigkeit zu sehr beeinträchtigt wird. Schließlich eignen sich solche mechanischen Bearbeitungsvorgänge, die von verschiedenen Seiten aus an dem Halbleiterblock vorgenommen werden müssen, nur schlecht für eine automatisierte Massenfertigung.
Demgegenüber ist das Ziel der Erfindung die Schaffung einer Halbleiterschaltungsanordnung der eingangs angegebenen Art, bei welcher die Schal-Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer
Herstellung
Anmelder:
Texas Instruments Incorporated,
Dallas, Tex. (V. St. A.)
Vertreter:
Dipl.-Ing. E. Prinz, Dr. rer. nat. G. Hauser
und Dipl.-Ing. G. Leiser, Patentanwälte,
München-Pasing, Ernsbergerstr. 19
Als Erfinder benannt:
Jack St. Clair Kilby, Dallas, Tex. (V. St. A.)
Beanspruchte Priorität:
V. St. v. Amerika vom 6. Februar 1959 (791 602), vom 12. Februar 1959 (792 840)
tungselemente ohne Einschränkung hinsichtlich ihrer Zahl und gegenseitigen Anordnung und ohne mechanische Bearbeitung voneinander elektrisch getrennt sind.
Nach der Erfindung wird dies dadurch erreicht, daß wenigstens zwei der Schaltungselemente im Innern des Plättchens durch einen pn-übergang elektrisch voneinander getrennt sind.
Die nach der Erfindung ausgeführte Halbleiterschaltungsanordnung hat die Grundform eines Plättchens, also eines Körpers mit zwei im wesentlichen parallelen Flächen, deren Abmessungen groß gegen die Dicke des Plättchens sind. Die gegenseitige elektrische Trennung der Schaltungselemente im Innern des Halbleiterplättchens wird durch die elektrischen Eigenschaften des Halbleitermaterials bewirkt, ohne daß dessen mechanische Form verändert wird. Es ist daher möglich, eine beliebige Zahl von Schaltungselementen in beliebiger gegenseitiger Lage in dem Halbleiterplättchen zu bilden und durch pn-Übergänge elektrisch voneinander zu trennen, ohne daß dessen mechanische Festigkeit beeinträchtigt wird. Die Bildung der pn-Übergänge
509 599/298
kann durch einfache Verfahrensmaßnahmen, beispielsweise durch Diffusion erfolgen, die leicht und genau steuerbar sind und sich vor allem für eine Massenfertigung eignen. Damit lassen sich die Schaltungselemente beliebiger elektronischer Schaltungen mit außerordentlich kleinen Abmessungen in einem einzigen Halbleiterplättchen bilden.
Beispielsweise ist eines der Schaltungselemente ein Widerstand, der durch einen länglichen Abschnitt des Plättchens gebildet ist, an dessen beiden Enden ohmsche Kontakte an einer Fläche des Plättchens angebracht sind, und der durch einen pn-übergang abgegrenzt ist. Eine Vergrößerung des Widerstands kann durch eine Verlängerung des Stromwegs zwischen den ohmschen Kontakten erfolgen.
Ein bevorzugtes Verfahren zur Herstellung einer solchen Halbleiterschaltungsanordnung besteht in diesem Fall darin, daß der Widerstand dadurch gebildet wird, daß ein Störstoff in das Plättchen eingebracht wird, der den Leitfähigkeitstyp des den Widerstand bildenden länglichen Abschnitts umkehrt.
Die Erfindung wird an Hand der Zeichnung beispielshalber erläutert, welche schematisch einen nach der Erfindung in einem Halbleiterplättchen hergestellten Widerstand zeigt.
Die Zeichnung zeigt als Beispiel die Bildung eines Widerstands in einem Halbleiterplättchen. In diesem Fall ist in dem Plättchen 10 aus Halbleitermaterial des Leitfähigkeitstyps ρ eine n-Zone10ö gebildet, beispielsweise durch Eindiffundieren von Störstoffen. Dann besteht zwischen dem übrigen Teil 10 a des Plättchens und der Zone 10 b ein pn-übergang 13. Elektroden lic und 12c sind an der Oberfläche der Zone 10 & in solchem Abstand voneinander angeordnet, daß der erwünschte Widerstandswert erreicht wird. Diese Elektroden Ua und 12 a stehen in ohmschem Kontakt mit der Zone 10 b. Der pn-übergang 13 bildet eine Sperre für den Stromfluß von der n-Zone 10 δ zu dem p-KörperlOa, dadurch ist der Stromfluß auf einen Weg in der n-Zone 10 b zwischen den dort befindlichen Elektroden beschränkt. Wenn also in dem Teil 10 a des Plättchens 10 weitere Schaltungselemente gebildet sind, sind diese von dem Widerstand elektrisch getrennt.
Der Gesamtwiderstand kann in weiten Grenzen beliebig eingestellt werden. Er kann beispielsweise leicht durch Ätzen der gesamten Oberfläche beeinflußt werden, wodurch der oberste Abschnitt der n-Zone 10 & entfernt wird. Dabei muß sehr sorgfältig gearbeitet werden, damit nicht durch den pn-übergang 13 hindurchgeätzt wird. Wahlweise kann auch an bestimmten Stellen bis zum pn-übergang 13 oder durch diesen hindurch geätzt werden, wodurch die wirksame Länge des Weges, den der Strom zwischen den Elektroden nehmen muß, vergrößert wird. Schließlich ist es auch möglich, durch die Steuerung der Dotierung oder der Störstoffkonzentration in der n-Zone 10 & niedrigere und nahezu konstante Temperaturkoeffizienten für den Widerstand zu erzeugen.
Es ist offensichtlich, daß der Körper 10 a ebensogut η-Leitfähigkeit und die Zone 10 & p-Leitfähigkeit besitzen könnten.

Claims (4)

Patentansprüche:
1. Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung mit einem Halbleiterplättchen in dem oder auf dem mehrere aktive und/oder passive elektrische Schaltungselemente gebildet sind, dadurch gekennzeichnet, daß wenigstens zwei der Schaltungselemente im Innern des Plättchens durch einen pn-übergang elektrisch voneinander getrennt sind.
2. Schaltungsanordnung nach Anspruch 1, dadurch gekennzeichnet, daß eines der Schaltungselemente ein Widerstand ist, der durch einen länglichen Abschnitt gebildet ist, an dessen beiden Enden ohmsche Kontakte an einer Hauptfläche des Plättchens angebracht sind, und der durch den pn-übergang abgegrenzt ist.
3. Schaltungsanordnung nach Anspruch 2, dadurch gekennzeichnet, daß eine Vergrößerung des Widerstandes durch eine Verlängerung des Stromwegs zwischen den ohmschen Kontakten erfolgt.
4. Verfahren zur Herstellung einer Halbleiterschaltungsanordnung nach Anspruch 2 oder 3, dadurch gekennzeichnet, daß der Widerstand dadurch gebildet wird, daß ein Störstoff in das Plättchen eingebracht wird, der den Leitfähigkeitstyp des den Widerstand bildenden länglichen Abschnitts umkehrt.
In Betracht gezogene Druckschriften:
Deutsche Patentschriften Nr. 833 366, 949422; deutsche Auslegeschriften Nr. 1011081,1040700; deutsches Gebrauchsmuster Nr. 1672 315;
britische Patentschriften Nr. 736289, 761926, 207;
belgische Patentschrift Nr. 550586;
USA.-Patentschriften Nr. 2493199, 2629 802,
2660624, 2662957, 2663806, 2663830, 2667607, 2680220, 2709232, 2735948, 2713644, 2748041, 2816228, 2817048, 2824977, 2836776, 2754431, 2847583, 2856544, 2858489, 2878147, 2897295,
2910634, 2915647, 2916408, 2922937, 2935668, 2944165, 2967952, 2976426, 2994834, 2995686, 2998550, 3005937, 3022472, 3038085, 3070466; Electronic & Radio Engineer, November 1957,
so S. 429;
Aviation Week, April 8, 1957, S. 86 bis 94;
Instruments & Automation, · April 1957, S. 667 und 668;
Electronics, 7. 8.1959, S. 110 und 111;
»Proceedings of an International Symposium on Electronic Components« by Dummer, S. 4, F i g. 19, Royal Radar Establishment Malvern, England, 24 bis 26. September 1957, veröffentlicht im United Kingdom, August 1958;
Control Engineering, Februar 1958, S. 31/32; »Army develops printed Transistors«.
Hierzu 1 Blatt Zeichnungen
509 599/29S 6.65 © Bundesdruckerei Berlin
DE19601196299D 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung Expired DE1196299C2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US791602A US3138743A (en) 1959-02-06 1959-02-06 Miniaturized electronic circuits
US792840A US3138747A (en) 1959-02-06 1959-02-12 Integrated semiconductor circuit device
US352380A US3261081A (en) 1959-02-06 1964-03-16 Method of making miniaturized electronic circuits

Publications (2)

Publication Number Publication Date
DE1196299B true DE1196299B (de) 1965-07-08
DE1196299C2 DE1196299C2 (de) 1974-03-07

Family

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DE19601196299D Expired DE1196299C2 (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung
DET27613A Pending DE1196296B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
DET27615A Pending DE1196298B (de) 1959-02-06 1960-02-05 Verfahren zur Herstellung einer mikrominiaturisierten, integrierten Halbleiterschaltungsanordnung
DET17835A Pending DE1196295B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung
DE1960T0027614 Expired DE1196297C2 (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
DET27617A Pending DE1196300B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiter-schaltungsanordnung
DET27618A Pending DE1196301B (de) 1959-02-06 1960-02-05 Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen
DE19641439754 Pending DE1439754B2 (de) 1959-02-06 1964-12-02 Kondensator und verfahren zu seiner herstellung

Family Applications After (7)

Application Number Title Priority Date Filing Date
DET27613A Pending DE1196296B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
DET27615A Pending DE1196298B (de) 1959-02-06 1960-02-05 Verfahren zur Herstellung einer mikrominiaturisierten, integrierten Halbleiterschaltungsanordnung
DET17835A Pending DE1196295B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung
DE1960T0027614 Expired DE1196297C2 (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
DET27617A Pending DE1196300B (de) 1959-02-06 1960-02-05 Mikrominiaturisierte, integrierte Halbleiter-schaltungsanordnung
DET27618A Pending DE1196301B (de) 1959-02-06 1960-02-05 Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen
DE19641439754 Pending DE1439754B2 (de) 1959-02-06 1964-12-02 Kondensator und verfahren zu seiner herstellung

Country Status (10)

Country Link
US (3) US3138743A (de)
JP (1) JPS6155256B1 (de)
AT (1) AT247482B (de)
CH (8) CH415867A (de)
DE (8) DE1196299C2 (de)
DK (7) DK104005C (de)
GB (14) GB945744A (de)
MY (14) MY6900302A (de)
NL (7) NL6608447A (de)
SE (1) SE314440B (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208012C2 (de) * 1959-08-06 1966-10-20 Telefunken Patent Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen
US3202891A (en) * 1960-11-30 1965-08-24 Gen Telephone & Elect Voltage variable capacitor with strontium titanate dielectric
BE623677A (de) * 1961-10-20
NL298196A (de) * 1962-09-22
US3235945A (en) * 1962-10-09 1966-02-22 Philco Corp Connection of semiconductor elements to thin film circuits using foil ribbon
GB1047390A (de) * 1963-05-20 1900-01-01
US3300832A (en) * 1963-06-28 1967-01-31 Rca Corp Method of making composite insulatorsemiconductor wafer
BE650116A (de) * 1963-07-05 1900-01-01
US3290758A (en) * 1963-08-07 1966-12-13 Hybrid solid state device
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
US3323071A (en) * 1964-07-09 1967-05-30 Nat Semiconductor Corp Semiconductor circuit arrangement utilizing integrated chopper element as zener-diode-coupled transistor
US3274670A (en) * 1965-03-18 1966-09-27 Bell Telephone Labor Inc Semiconductor contact
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
US3486085A (en) * 1966-03-30 1969-12-23 Intelligent Instr Inc Multilayer integrated circuit structure
US3562560A (en) * 1967-08-23 1971-02-09 Hitachi Ltd Transistor-transistor logic
US3521134A (en) * 1968-11-14 1970-07-21 Hewlett Packard Co Semiconductor connection apparatus
US4416049A (en) * 1970-05-30 1983-11-22 Texas Instruments Incorporated Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor
CA1007308A (en) * 1972-12-29 1977-03-22 Jack A. Dorler Cross-coupled capacitor for ac performance tuning
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material
US4603372A (en) * 1984-11-05 1986-07-29 Direction De La Meteorologie Du Ministere Des Transports Method of fabricating a temperature or humidity sensor of the thin film type, and sensors obtained thereby
US5144158A (en) * 1984-11-19 1992-09-01 Fujitsu Limited ECL latch circuit having a noise resistance circuit in only one feedback path
FR2596922B1 (fr) * 1986-04-04 1988-05-20 Thomson Csf Resistance integree sur un substrat semi-conducteur
WO2001017027A1 (fr) * 1999-08-30 2001-03-08 Institute Of Biophysics Chinese Academy Of Sciences Diode a plaques paralleles
KR100368930B1 (ko) * 2001-03-29 2003-01-24 한국과학기술원 반도체 기판 위에 높이 떠 있는 3차원 금속 소자, 그 회로모델, 및 그 제조방법
US7415421B2 (en) * 2003-02-12 2008-08-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for implementing an engineering change across fab facilities
US7297589B2 (en) 2005-04-08 2007-11-20 The Board Of Trustees Of The University Of Illinois Transistor device and method
US7741971B2 (en) * 2007-04-22 2010-06-22 James Neil Rodgers Split chip
JP2009231891A (ja) 2008-03-19 2009-10-08 Nec Electronics Corp 半導体装置
US8786355B2 (en) * 2011-11-10 2014-07-22 Qualcomm Incorporated Low-power voltage reference circuit
CN105979626B (zh) 2016-05-23 2018-08-24 昂宝电子（上海）有限公司 包括锁相电源的具有时变电压电流特性的双端子集成电路
US9900943B2 (en) 2016-05-23 2018-02-20 On-Bright Electronics (Shanghai) Co., Ltd. Two-terminal integrated circuits with time-varying voltage-current characteristics including phased-locked power supplies
US10872950B2 (en) 2016-10-04 2020-12-22 Nanohenry Inc. Method for growing very thick thermal local silicon oxide structures and silicon oxide embedded spiral inductors
US11325093B2 (en) 2020-01-24 2022-05-10 BiologIC Technologies Limited Modular reactor systems and devices, methods of manufacturing the same and methods of performing reactions

Citations (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE550586A (de) * 1955-12-02
US2493199A (en) * 1947-08-15 1950-01-03 Globe Union Inc Electric circuit component
DE833366C (de) * 1949-04-14 1952-06-30 Siemens & Halske A G Halbleiterverstaerker
US2629802A (en) * 1951-12-07 1953-02-24 Rca Corp Photocell amplifier construction
US2660624A (en) * 1949-02-24 1953-11-24 Rca Corp High input impedance semiconductor amplifier
US2662957A (en) * 1949-10-29 1953-12-15 Eisler Paul Electrical resistor or semiconductor
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2663806A (en) * 1952-05-09 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2667607A (en) * 1952-04-26 1954-01-26 Bell Telephone Labor Inc Semiconductor circuit element
DE1672315U (de) * 1952-07-29 1954-02-25 Licentia Gmbh Gleichrichter aus einem halbleitermaterial, das mit hoher stromdichte belastet werden kann.
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2709232A (en) * 1952-04-15 1955-05-24 Licentia Gmbh Controllable electrically unsymmetrically conductive device
US2713644A (en) * 1954-06-29 1955-07-19 Rca Corp Self-powered semiconductor devices
GB736289A (en) * 1952-12-19 1955-09-07 Gen Ral Electric Company Improvements relating to transistor amplifiers
US2735948A (en) * 1953-01-21 1956-02-21 Output
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
DE949422C (de) * 1953-02-02 1956-09-20 Philips Nv Transistorelement und Schaltung mit demselben zum Verstaerken eines elektrischen Signals
GB761926A (en) * 1953-08-03 1956-11-21 Rca Corp Self-powered semiconductive devices
DE1011081B (de) * 1953-08-18 1957-06-27 Siemens Ag Zu einem Bauelement zusammengefasste Widerstandskondensator-Kombination
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
US2817048A (en) * 1954-12-16 1957-12-17 Siemens Ag Transistor arrangement
US2824977A (en) * 1954-12-24 1958-02-25 Rca Corp Semiconductor devices and systems
US2836776A (en) * 1955-05-07 1958-05-27 Nippon Electric Co Capacitor
US2847583A (en) * 1954-12-13 1958-08-12 Rca Corp Semiconductor devices and stabilization thereof
DE1040700B (de) * 1956-11-16 1958-10-09 Siemens Ag Verfahren zur Herstellung eines Diffusionstransistors
US2856544A (en) * 1956-04-18 1958-10-14 Bell Telephone Labor Inc Semiconductive pulse translator
US2858489A (en) * 1955-11-04 1958-10-28 Westinghouse Electric Corp Power transistor
GB805207A (en) * 1955-06-20 1958-12-03 Western Electric Co Electric circuit devices utilizing semiconductor bodies and circuits including such devices
US2878147A (en) * 1956-04-03 1959-03-17 Beale Julian Robert Anthony Method of making semi-conductive device
US2897295A (en) * 1956-06-28 1959-07-28 Honeywell Regulator Co Cascaded tetrode transistor amplifier
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
US2922937A (en) * 1956-02-08 1960-01-26 Gen Electric Capacitor and dielectric material therefor
US2935668A (en) * 1951-01-05 1960-05-03 Sprague Electric Co Electrical capacitors
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
US2967952A (en) * 1956-04-25 1961-01-10 Shockley William Semiconductor shift register
US2976426A (en) * 1953-08-03 1961-03-21 Rca Corp Self-powered semiconductive device
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
US2995686A (en) * 1959-03-02 1961-08-08 Sylvania Electric Prod Microelectronic circuit module
US2998550A (en) * 1954-06-30 1961-08-29 Rca Corp Apparatus for powering a plurality of semi-conducting units from a single radioactive battery
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
US3038085A (en) * 1958-03-25 1962-06-05 Rca Corp Shift-register utilizing unitary multielectrode semiconductor device
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE553173A (de) * 1954-05-10
US2831787A (en) * 1954-07-27 1958-04-22 Emeis
US2889469A (en) * 1955-10-05 1959-06-02 Rca Corp Semi-conductor electrical pulse counting means
US2814853A (en) * 1956-06-14 1957-12-03 Power Equipment Company Manufacturing transistors
US2866140A (en) * 1957-01-11 1958-12-23 Texas Instruments Inc Grown junction transistors
NL113470C (de) * 1957-06-25
GB800221A (en) * 1957-09-10 1958-08-20 Nat Res Dev Improvements in or relating to semi-conductor devices

Patent Citations (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2493199A (en) * 1947-08-15 1950-01-03 Globe Union Inc Electric circuit component
US2660624A (en) * 1949-02-24 1953-11-24 Rca Corp High input impedance semiconductor amplifier
DE833366C (de) * 1949-04-14 1952-06-30 Siemens & Halske A G Halbleiterverstaerker
US2662957A (en) * 1949-10-29 1953-12-15 Eisler Paul Electrical resistor or semiconductor
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2935668A (en) * 1951-01-05 1960-05-03 Sprague Electric Co Electrical capacitors
US2629802A (en) * 1951-12-07 1953-02-24 Rca Corp Photocell amplifier construction
US2709232A (en) * 1952-04-15 1955-05-24 Licentia Gmbh Controllable electrically unsymmetrically conductive device
US2667607A (en) * 1952-04-26 1954-01-26 Bell Telephone Labor Inc Semiconductor circuit element
US2663806A (en) * 1952-05-09 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
DE1672315U (de) * 1952-07-29 1954-02-25 Licentia Gmbh Gleichrichter aus einem halbleitermaterial, das mit hoher stromdichte belastet werden kann.
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
GB736289A (en) * 1952-12-19 1955-09-07 Gen Ral Electric Company Improvements relating to transistor amplifiers
US2735948A (en) * 1953-01-21 1956-02-21 Output
DE949422C (de) * 1953-02-02 1956-09-20 Philips Nv Transistorelement und Schaltung mit demselben zum Verstaerken eines elektrischen Signals
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
GB761926A (en) * 1953-08-03 1956-11-21 Rca Corp Self-powered semiconductive devices
US2976426A (en) * 1953-08-03 1961-03-21 Rca Corp Self-powered semiconductive device
DE1011081B (de) * 1953-08-18 1957-06-27 Siemens Ag Zu einem Bauelement zusammengefasste Widerstandskondensator-Kombination
US2713644A (en) * 1954-06-29 1955-07-19 Rca Corp Self-powered semiconductor devices
US2998550A (en) * 1954-06-30 1961-08-29 Rca Corp Apparatus for powering a plurality of semi-conducting units from a single radioactive battery
US2847583A (en) * 1954-12-13 1958-08-12 Rca Corp Semiconductor devices and stabilization thereof
US2817048A (en) * 1954-12-16 1957-12-17 Siemens Ag Transistor arrangement
US2824977A (en) * 1954-12-24 1958-02-25 Rca Corp Semiconductor devices and systems
US2836776A (en) * 1955-05-07 1958-05-27 Nippon Electric Co Capacitor
GB805207A (en) * 1955-06-20 1958-12-03 Western Electric Co Electric circuit devices utilizing semiconductor bodies and circuits including such devices
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2858489A (en) * 1955-11-04 1958-10-28 Westinghouse Electric Corp Power transistor
BE550586A (de) * 1955-12-02
US2922937A (en) * 1956-02-08 1960-01-26 Gen Electric Capacitor and dielectric material therefor
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
US2878147A (en) * 1956-04-03 1959-03-17 Beale Julian Robert Anthony Method of making semi-conductive device
US2856544A (en) * 1956-04-18 1958-10-14 Bell Telephone Labor Inc Semiconductive pulse translator
US2967952A (en) * 1956-04-25 1961-01-10 Shockley William Semiconductor shift register
US2897295A (en) * 1956-06-28 1959-07-28 Honeywell Regulator Co Cascaded tetrode transistor amplifier
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
DE1040700B (de) * 1956-11-16 1958-10-09 Siemens Ag Verfahren zur Herstellung eines Diffusionstransistors
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
US3038085A (en) * 1958-03-25 1962-06-05 Rca Corp Shift-register utilizing unitary multielectrode semiconductor device
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
US2995686A (en) * 1959-03-02 1961-08-08 Sylvania Electric Prod Microelectronic circuit module
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material

Also Published As

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GB945747A (de)
DK104008C (da) 1966-03-21
US3138747A (en) 1964-06-23
MY6900291A (en) 1969-12-31
MY6900290A (en) 1969-12-31
MY6900283A (en) 1969-12-31
DE1439754B2 (de) 1972-04-13
DE1196300B (de) 1965-07-08
MY6900301A (en) 1969-12-31
MY6900296A (en) 1969-12-31
NL6608452A (de) 1970-07-23
CH415869A (fr) 1966-06-30
CH410194A (fr) 1966-03-31
NL6608446A (de) 1970-07-23
GB945739A (en) 1964-01-08
GB945743A (en) 1964-01-08
GB945749A (en) 1964-01-08
GB945741A (en) 1964-01-08
DE1196295B (de) 1965-07-08
DK104005C (da) 1966-03-21
DK104006C (da) 1966-03-21
CH387799A (fr) 1965-02-15
MY6900300A (en) 1969-12-31
CH415867A (fr) 1966-06-30
MY6900285A (en) 1969-12-31
MY6900287A (en) 1969-12-31
DE1196298B (de) 1965-07-08
GB945746A (en) 1964-01-08
MY6900292A (en) 1969-12-31
GB945740A (de)
DK104007C (da) 1966-03-21
DE1196301B (de) 1965-07-08
MY6900302A (en) 1969-12-31
DE1196297C2 (de) 1974-01-17
DK104185C (da) 1966-04-18
GB945742A (de)
CH410201A (fr) 1966-03-31
CH380824A (fr) 1964-08-14
SE314440B (de) 1969-09-08
US3138743A (en) 1964-06-23
CH416845A (fr) 1966-07-15
GB945744A (en) 1964-01-08
DE1196299C2 (de) 1974-03-07
MY6900286A (en) 1969-12-31
DK104470C (da) 1966-05-23
CH415868A (fr) 1966-06-30
NL6608448A (de) 1970-07-23
DE1196297B (de) 1965-07-08
NL6608449A (de) 1970-07-23
MY6900315A (en) 1969-12-31
MY6900284A (en) 1969-12-31
DE1439754A1 (de) 1969-12-04
DK103790C (da) 1966-02-21
AT247482B (de) 1966-06-10
JPS6155256B1 (de) 1986-11-27
NL6608451A (de) 1970-07-23
GB945738A (en) 1964-01-08
DE1196296B (de) 1965-07-08
NL6608445A (de) 1970-07-23
NL134915C (de) 1972-04-17
GB945734A (en) 1964-01-08
US3261081A (en) 1966-07-19
GB945745A (en) 1964-01-08
GB945737A (en) 1964-01-08
NL6608447A (de) 1970-07-23
GB945748A (en) 1964-01-08
MY6900293A (en) 1969-12-31

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E77 Valid patent as to the heymanns-index 1977