NL6608452A - - Google Patents

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Publication number
NL6608452A
NL6608452A NL6608452A NL6608452A NL6608452A NL 6608452 A NL6608452 A NL 6608452A NL 6608452 A NL6608452 A NL 6608452A NL 6608452 A NL6608452 A NL 6608452A NL 6608452 A NL6608452 A NL 6608452A
Authority
NL
Netherlands
Prior art keywords
semi
conductor
feb
divided
secured
Prior art date
Application number
NL6608452A
Other languages
English (en)
Other versions
NL134915C (de
Inventor
Jack S Kilby
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27408060&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NL6608452(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of NL6608452A publication Critical patent/NL6608452A/xx
Application granted granted Critical
Publication of NL134915C publication Critical patent/NL134915C/xx

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Thyristors (AREA)
NL6608452A 1959-02-06 1966-06-17 NL134915C (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US791602A US3138743A (en) 1959-02-06 1959-02-06 Miniaturized electronic circuits
US792840A US3138747A (en) 1959-02-06 1959-02-12 Integrated semiconductor circuit device
US352380A US3261081A (en) 1959-02-06 1964-03-16 Method of making miniaturized electronic circuits

Publications (2)

Publication Number Publication Date
NL6608452A true NL6608452A (de) 1970-07-23
NL134915C NL134915C (de) 1972-04-17

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Application Number Title Priority Date Filing Date
NL6608448A NL6608448A (de) 1959-02-06 1966-06-17
NL6608447A NL6608447A (de) 1959-02-06 1966-06-17
NL6608451A NL6608451A (de) 1959-02-06 1966-06-17
NL6608452A NL134915C (de) 1959-02-06 1966-06-17
NL6608446A NL6608446A (de) 1959-02-06 1966-06-17
NL6608449A NL6608449A (de) 1959-02-06 1966-06-17
NL6608445A NL6608445A (de) 1959-02-06 1966-06-17

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NL6608448A NL6608448A (de) 1959-02-06 1966-06-17
NL6608447A NL6608447A (de) 1959-02-06 1966-06-17
NL6608451A NL6608451A (de) 1959-02-06 1966-06-17

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NL6608446A NL6608446A (de) 1959-02-06 1966-06-17
NL6608449A NL6608449A (de) 1959-02-06 1966-06-17
NL6608445A NL6608445A (de) 1959-02-06 1966-06-17

Country Status (10)

Country Link
US (3) US3138743A (de)
JP (1) JPS6155256B1 (de)
AT (1) AT247482B (de)
CH (8) CH380824A (de)
DE (8) DE1196297C2 (de)
DK (7) DK104006C (de)
GB (14) GB945743A (de)
MY (14) MY6900285A (de)
NL (7) NL6608448A (de)
SE (1) SE314440B (de)

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Also Published As

Publication number Publication date
CH415868A (fr) 1966-06-30
NL6608445A (de) 1970-07-23
DE1196299B (de) 1965-07-08
MY6900300A (en) 1969-12-31
DK104005C (da) 1966-03-21
NL6608448A (de) 1970-07-23
CH387799A (fr) 1965-02-15
MY6900302A (en) 1969-12-31
GB945737A (en) 1964-01-08
DK104185C (da) 1966-04-18
DE1196297C2 (de) 1974-01-17
GB945749A (en) 1964-01-08
US3261081A (en) 1966-07-19
CH410201A (fr) 1966-03-31
GB945743A (en) 1964-01-08
GB945747A (de)
NL6608446A (de) 1970-07-23
CH415867A (fr) 1966-06-30
DE1196299C2 (de) 1974-03-07
JPS6155256B1 (de) 1986-11-27
NL6608451A (de) 1970-07-23
NL6608447A (de) 1970-07-23
DE1196300B (de) 1965-07-08
MY6900296A (en) 1969-12-31
DE1196296B (de) 1965-07-08
DK104006C (da) 1966-03-21
DE1196298B (de) 1965-07-08
MY6900293A (en) 1969-12-31
GB945742A (de)
CH416845A (fr) 1966-07-15
NL134915C (de) 1972-04-17
CH380824A (fr) 1964-08-14
DK104470C (da) 1966-05-23
SE314440B (de) 1969-09-08
US3138743A (en) 1964-06-23
MY6900301A (en) 1969-12-31
GB945744A (en) 1964-01-08
MY6900283A (en) 1969-12-31
MY6900315A (en) 1969-12-31
MY6900291A (en) 1969-12-31
MY6900285A (en) 1969-12-31
US3138747A (en) 1964-06-23
GB945734A (en) 1964-01-08
DE1439754A1 (de) 1969-12-04
GB945738A (en) 1964-01-08
GB945746A (en) 1964-01-08
AT247482B (de) 1966-06-10
GB945740A (de)
NL6608449A (de) 1970-07-23
GB945745A (en) 1964-01-08
DK104008C (da) 1966-03-21
MY6900287A (en) 1969-12-31
DK103790C (da) 1966-02-21
CH415869A (fr) 1966-06-30
DE1196297B (de) 1965-07-08
MY6900290A (en) 1969-12-31
GB945741A (en) 1964-01-08
MY6900286A (en) 1969-12-31
GB945739A (en) 1964-01-08
DE1196295B (de) 1965-07-08
MY6900284A (en) 1969-12-31
DE1439754B2 (de) 1972-04-13
GB945748A (en) 1964-01-08
CH410194A (fr) 1966-03-31
MY6900292A (en) 1969-12-31
DE1196301B (de) 1965-07-08
DK104007C (da) 1966-03-21

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