GB1270215A - Improvements in or relating to semiconductor components - Google Patents

Improvements in or relating to semiconductor components

Info

Publication number
GB1270215A
GB1270215A GB1892370A GB1892370A GB1270215A GB 1270215 A GB1270215 A GB 1270215A GB 1892370 A GB1892370 A GB 1892370A GB 1892370 A GB1892370 A GB 1892370A GB 1270215 A GB1270215 A GB 1270215A
Authority
GB
United Kingdom
Prior art keywords
semi
insulation
contact
terminal
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1892370A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1270215A publication Critical patent/GB1270215A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1,270,215. Semi-conductor devices. SIEMENS A.G. 21 April, 1970 [22 April, 1969], No. 18923/70. Heading H1K. A semi-conductor device has a surface covered with insulation carrying metal layers which each make contact with the semi-conductor through respective holes in the insulation. The metal layers are covered with a further layer of insulation through which an aperture extends to allow contact between a built-up terminal and a metal layer connected to a pn-junctionforming zone in the body, the terminal being designed to serve as a contact when the device is inserted into a housing. The planar diode shown has, in addition to its main electrode 6 and associated terminal 10, an annular fieldrelief electrode 7 and an (optional) heavily doped contact zone therefor.
GB1892370A 1969-04-22 1970-04-21 Improvements in or relating to semiconductor components Expired GB1270215A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920396 DE1920396A1 (en) 1969-04-22 1969-04-22 Arrangement for increasing the breakdown strength of semiconductor components

Publications (1)

Publication Number Publication Date
GB1270215A true GB1270215A (en) 1972-04-12

Family

ID=5731932

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1892370A Expired GB1270215A (en) 1969-04-22 1970-04-21 Improvements in or relating to semiconductor components

Country Status (5)

Country Link
CH (1) CH501312A (en)
DE (1) DE1920396A1 (en)
FR (1) FR2039342B1 (en)
GB (1) GB1270215A (en)
NL (1) NL7003491A (en)

Also Published As

Publication number Publication date
NL7003491A (en) 1970-10-26
CH501312A (en) 1970-12-31
DE1920396A1 (en) 1970-11-12
FR2039342B1 (en) 1974-10-31
FR2039342A1 (en) 1971-01-15

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