GB955529A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB955529A
GB955529A GB1950662A GB1950662A GB955529A GB 955529 A GB955529 A GB 955529A GB 1950662 A GB1950662 A GB 1950662A GB 1950662 A GB1950662 A GB 1950662A GB 955529 A GB955529 A GB 955529A
Authority
GB
United Kingdom
Prior art keywords
region
electrode
rectifying contact
conductivity type
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1950662A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB955529A publication Critical patent/GB955529A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

955,529. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. May 21, 1962 [June 21, 1961], No. 19506/62. Heading H1K. The equivalent of two electrically - connected junction transistors 10 and 20, Fig. 1, is incorporated in a monolithic semi-conductor device, Figs. 3 and 5, comprising a semi - conductor body having a first region 36 of one conductivity type and a second region 32 of the opposite conductivity type meeting in a first PN junction J2 and having a third region 64 of the first conductivity type and a fourth region 62 of the opposite conductivity type meeting in a second PN junction J4, a first electrode 35 in non-rectifying contact with the first region 36, a second electrode 50 in both non-rectifying contact with the first region 36 and rectifying contact with the fourth region 62, a third electrode 11 in rectifying contact with the second region 32, a fourth electrode 31 in non-rectifying contact with the second region 32, a fifth electrode 63 in non-rectifying contact with the third region 64, and a sixth electrode 61 in non- rectifying contact with the fourth region 62, the arrangement being such that a first impedance 24 is formed by the first region 36 between electrodes 35 and 50 and a second impedance (corresponding to resistance 25, Fig. 1) is formed by the fourth region 62 between electrode 61 and the PN junction J3 established by electrode 50 in rectifying contact with the fourth region 62.
GB1950662A 1961-06-21 1962-05-21 Semiconductor device Expired GB955529A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11871761A 1961-06-21 1961-06-21

Publications (1)

Publication Number Publication Date
GB955529A true GB955529A (en) 1964-04-15

Family

ID=22380325

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1950662A Expired GB955529A (en) 1961-06-21 1962-05-21 Semiconductor device

Country Status (1)

Country Link
GB (1) GB955529A (en)

Similar Documents

Publication Publication Date Title
NL134915C (en)
GB1002734A (en) Coupling transistor
GB1099381A (en) Solid state field-effect devices
GB1065150A (en) Semiconductor switch
GB783647A (en) Improvements in or relating to barrier-layer systems
GB1191890A (en) Semiconductor Controlled Rectifier Devices
GB935710A (en) Improvements in controlled semiconductor rectifiers
GB1251088A (en)
GB1060208A (en) Avalanche transistor
GB1057649A (en) Semiconductor switch
GB1306570A (en) Field effect semiconductor device
GB1134019A (en) Improvements in semi-conductor devices
GB983266A (en) Semiconductor switching devices
GB682206A (en) Improvements in or relating to amplifiers employing semi-conductors
GB955529A (en) Semiconductor device
GB954731A (en) High gain transistor
GB1066159A (en) Semiconductor devices
GB1458579A (en) Semi-conductor gate controlled switch devices
ES403881A1 (en) Semiconductor devices having stable high-voltage junctions
GB1208030A (en) A semiconductor device
GB1030670A (en) Semiconductor devices
GB1522411A (en) Semiconductor device
GB1018673A (en) Semiconductor devices
GB996968A (en) Improvements in semiconductor devices and methods of making same
GB1400945A (en) Semi-conductor non-linear capacitor