DE2819861A1 - Integrierte schaltung mit komplementaeren mos-transistoren - Google Patents

Integrierte schaltung mit komplementaeren mos-transistoren

Info

Publication number
DE2819861A1
DE2819861A1 DE19782819861 DE2819861A DE2819861A1 DE 2819861 A1 DE2819861 A1 DE 2819861A1 DE 19782819861 DE19782819861 DE 19782819861 DE 2819861 A DE2819861 A DE 2819861A DE 2819861 A1 DE2819861 A1 DE 2819861A1
Authority
DE
Germany
Prior art keywords
doping
transistor
type
integrated circuit
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19782819861
Other languages
German (de)
English (en)
Inventor
Mougahed Darwish
Henri J Dr Ing Oguey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre Electronique Horloger SA
Original Assignee
Centre Electronique Horloger SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electronique Horloger SA filed Critical Centre Electronique Horloger SA
Publication of DE2819861A1 publication Critical patent/DE2819861A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19782819861 1977-05-05 1978-05-05 Integrierte schaltung mit komplementaeren mos-transistoren Withdrawn DE2819861A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH563777A CH616024A5 (enExample) 1977-05-05 1977-05-05

Publications (1)

Publication Number Publication Date
DE2819861A1 true DE2819861A1 (de) 1978-11-09

Family

ID=4296944

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782819861 Withdrawn DE2819861A1 (de) 1977-05-05 1978-05-05 Integrierte schaltung mit komplementaeren mos-transistoren

Country Status (4)

Country Link
US (1) US4205342A (enExample)
JP (1) JPS549589A (enExample)
CH (1) CH616024A5 (enExample)
DE (1) DE2819861A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4295897B1 (en) * 1979-10-03 1997-09-09 Texas Instruments Inc Method of making cmos integrated circuit device
US4391650A (en) * 1980-12-22 1983-07-05 Ncr Corporation Method for fabricating improved complementary metal oxide semiconductor devices
NL8304035A (nl) * 1983-11-24 1985-06-17 Philips Nv Blooming ongevoelige beeldopneeminrichting en werkwijze ter vervaardiging daarvan.
EP0182876B1 (en) * 1984-05-25 1990-10-24 American Microsystems, Incorporated Tri-well cmos technology
JPS61229366A (ja) * 1985-04-03 1986-10-13 Rohm Co Ltd 半導体装置の製造方法
JPS61229367A (ja) * 1985-04-04 1986-10-13 Rohm Co Ltd 半導体装置およびその製造方法
US4717836A (en) * 1986-02-04 1988-01-05 Burr-Brown Corporation CMOS input level shifting circuit with temperature-compensating n-channel field effect transistor structure
JPS6384067A (ja) * 1986-09-27 1988-04-14 Toshiba Corp 半導体装置の製造方法
JPH0191446A (ja) * 1987-10-02 1989-04-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6211555B1 (en) 1998-09-29 2001-04-03 Lsi Logic Corporation Semiconductor device with a pair of transistors having dual work function gate electrodes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374406A (en) * 1964-06-01 1968-03-19 Rca Corp Insulated-gate field-effect transistor
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode
US3593069A (en) * 1969-10-08 1971-07-13 Nat Semiconductor Corp Integrated circuit resistor and method of making the same
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3821776A (en) * 1970-12-28 1974-06-28 Kogyo Gijutsuin Diffusion self aligned mosfet with pinch off isolation
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element

Also Published As

Publication number Publication date
CH616024A5 (enExample) 1980-02-29
US4205342A (en) 1980-05-27
JPS549589A (en) 1979-01-24

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8139 Disposal/non-payment of the annual fee