DE2813968C2 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE2813968C2
DE2813968C2 DE2813968A DE2813968A DE2813968C2 DE 2813968 C2 DE2813968 C2 DE 2813968C2 DE 2813968 A DE2813968 A DE 2813968A DE 2813968 A DE2813968 A DE 2813968A DE 2813968 C2 DE2813968 C2 DE 2813968C2
Authority
DE
Germany
Prior art keywords
contact
semiconductor
semiconductor substrate
layer
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2813968A
Other languages
German (de)
English (en)
Other versions
DE2813968A1 (de
Inventor
Susumu Sato
Hiroshi Tokyo Shiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of DE2813968A1 publication Critical patent/DE2813968A1/de
Application granted granted Critical
Publication of DE2813968C2 publication Critical patent/DE2813968C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/077—Connecting of TAB connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/701—Tape-automated bond [TAB] connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Wire Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE2813968A 1977-04-01 1978-03-31 Halbleiteranordnung Expired DE2813968C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3699677A JPS53123074A (en) 1977-04-01 1977-04-01 Semiconductor device

Publications (2)

Publication Number Publication Date
DE2813968A1 DE2813968A1 (de) 1978-10-12
DE2813968C2 true DE2813968C2 (de) 1983-11-10

Family

ID=12485335

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2813968A Expired DE2813968C2 (de) 1977-04-01 1978-03-31 Halbleiteranordnung

Country Status (5)

Country Link
US (1) US4188636A (https=)
JP (1) JPS53123074A (https=)
DE (1) DE2813968C2 (https=)
FR (1) FR2386138A1 (https=)
GB (1) GB1591223A (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4609936A (en) * 1979-09-19 1986-09-02 Motorola, Inc. Semiconductor chip with direct-bonded external leadframe
US4316200A (en) * 1980-03-07 1982-02-16 International Business Machines Corporation Contact technique for electrical circuitry
EP0039160A3 (en) * 1980-04-29 1982-08-25 Minnesota Mining And Manufacturing Company Methods for bonding conductive bumps to electronic circuitry
JPS5925387B2 (ja) * 1980-06-10 1984-06-16 株式会社東芝 半導体装置
JPS601968A (ja) * 1983-06-17 1985-01-08 Matsushita Electric Ind Co Ltd 半導体装置
JPS6031244A (ja) * 1983-08-01 1985-02-18 Oki Electric Ind Co Ltd 半導体装置
US4495222A (en) * 1983-11-07 1985-01-22 Motorola, Inc. Metallization means and method for high temperature applications
US4600658A (en) * 1983-11-07 1986-07-15 Motorola, Inc. Metallization means and method for high temperature applications
US4736236A (en) * 1984-03-08 1988-04-05 Olin Corporation Tape bonding material and structure for electronic circuit fabrication
US4607276A (en) * 1984-03-08 1986-08-19 Olin Corporation Tape packages
JPS61141147A (ja) * 1984-12-13 1986-06-28 Nec Corp 半導体装置の製造方法
JPS62188333A (ja) * 1986-02-14 1987-08-17 Nec Corp 集積回路装置
JPS6341036A (ja) * 1986-08-06 1988-02-22 Nec Corp 半導体装置
JP2623578B2 (ja) * 1987-07-14 1997-06-25 日本電気株式会社 半導体集積回路装置
US5016082A (en) * 1988-09-16 1991-05-14 Delco Electronics Corporation Integrated circuit interconnect design
US5260603A (en) * 1990-01-25 1993-11-09 Kabushiki Kaisha Toshiba Electrode structure of semiconductor device for use in GaAs compound substrate
JP3269171B2 (ja) * 1993-04-08 2002-03-25 セイコーエプソン株式会社 半導体装置およびそれを有した時計
US5369300A (en) * 1993-06-10 1994-11-29 Delco Electronics Corporation Multilayer metallization for silicon semiconductor devices including a diffusion barrier formed of amorphous tungsten/silicon
US5517127A (en) * 1995-01-09 1996-05-14 International Business Machines Corporation Additive structure and method for testing semiconductor wire bond dies
FR2749974B1 (fr) * 1996-06-13 1998-08-14 Bull Sa Procede de montage d'un circuit integre sur un support et support en resultant
US6078103A (en) * 1998-10-29 2000-06-20 Mcdonnell Douglas Corporation Dimpled contacts for metal-to-semiconductor connections, and methods for fabricating same
US7381642B2 (en) 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits
US7405149B1 (en) * 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
JP2005062582A (ja) * 2003-08-18 2005-03-10 Hitachi Displays Ltd 表示装置
JP4107275B2 (ja) * 2004-09-09 2008-06-25 セイコーエプソン株式会社 検査用プローブ及び検査装置、検査用プローブの製造方法
US7082844B1 (en) * 2005-02-16 2006-08-01 Cts Corporation Strain sensor having improved accuracy
US7441467B2 (en) * 2006-07-12 2008-10-28 Cts Corporation Compression strain sensor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1171088B (de) * 1962-02-16 1964-05-27 Intermetall Verfahren zum Kontaktieren von Hochfrequenztransistoren
US3763404A (en) * 1968-03-01 1973-10-02 Gen Electric Semiconductor devices and manufacture thereof
JPS4831507B1 (https=) * 1969-07-10 1973-09-29
JPS4834686A (https=) * 1971-09-09 1973-05-21
US3781609A (en) * 1971-11-03 1973-12-25 Ibm A semiconductor integrated circuit chip structure protected against impact damage from other chips during chip handling
US3740523A (en) * 1971-12-30 1973-06-19 Bell Telephone Labor Inc Encoding of read only memory by laser vaporization
DE2348323A1 (de) * 1973-09-26 1975-04-03 Licentia Gmbh Integrierte festkoerperschaltung mit einer vielzahl von bauelementen in einem gemeinsamen halbleiterkoerper
US4067039A (en) * 1975-03-17 1978-01-03 Motorola, Inc. Ultrasonic bonding head
US4032949A (en) * 1975-05-15 1977-06-28 Raytheon Company Integrated circuit fusing technique
US4000842A (en) * 1975-06-02 1977-01-04 National Semiconductor Corporation Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices
US4188438A (en) * 1975-06-02 1980-02-12 National Semiconductor Corporation Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices
JPS51147253A (en) * 1975-06-13 1976-12-17 Nec Corp Structure of electrode terminal
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections

Also Published As

Publication number Publication date
JPS53123074A (en) 1978-10-27
FR2386138B1 (https=) 1984-06-08
DE2813968A1 (de) 1978-10-12
US4188636A (en) 1980-02-12
FR2386138A1 (fr) 1978-10-27
GB1591223A (en) 1981-06-17

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Legal Events

Date Code Title Description
OAR Request for search filed
OB Request for examination as to novelty
OC Search report available
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition