FR2386138A1 - Dispositif semiconducteur comprenant des protuberances servant de bornes et des bossages d'appui - Google Patents

Dispositif semiconducteur comprenant des protuberances servant de bornes et des bossages d'appui

Info

Publication number
FR2386138A1
FR2386138A1 FR7809671A FR7809671A FR2386138A1 FR 2386138 A1 FR2386138 A1 FR 2386138A1 FR 7809671 A FR7809671 A FR 7809671A FR 7809671 A FR7809671 A FR 7809671A FR 2386138 A1 FR2386138 A1 FR 2386138A1
Authority
FR
France
Prior art keywords
semiconductor device
device including
support bosses
serving terminals
including protuberances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7809671A
Other languages
English (en)
Other versions
FR2386138B1 (fr
Inventor
Susumu Sato
Hiroshi Shiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of FR2386138A1 publication Critical patent/FR2386138A1/fr
Application granted granted Critical
Publication of FR2386138B1 publication Critical patent/FR2386138B1/fr
Granted legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne un dispositif semiconducteur comprenant des protubérances servant de bornes et des bossages d'appui. Lors de la liaison d'un conducteur de connexion 103 à une protubérance 22 servant de borne, un contact est susceptible de se former par suite de l'écrasement par un outil 4 entre le conducteur 103 et les bords 113 du dispositif semiconducteur. Pour éviter ce phénomène, il est prévu selon la présente invention un bossage supplémentaire 24. Application à l'augmentation de la fiabilité des processus de connexion d'entrées et de sorties à des circuits intégrés.
FR7809671A 1977-04-01 1978-03-31 Dispositif semiconducteur comprenant des protuberances servant de bornes et des bossages d'appui Granted FR2386138A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3699677A JPS53123074A (en) 1977-04-01 1977-04-01 Semiconductor device

Publications (2)

Publication Number Publication Date
FR2386138A1 true FR2386138A1 (fr) 1978-10-27
FR2386138B1 FR2386138B1 (fr) 1984-06-08

Family

ID=12485335

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7809671A Granted FR2386138A1 (fr) 1977-04-01 1978-03-31 Dispositif semiconducteur comprenant des protuberances servant de bornes et des bossages d'appui

Country Status (5)

Country Link
US (1) US4188636A (fr)
JP (1) JPS53123074A (fr)
DE (1) DE2813968C2 (fr)
FR (1) FR2386138A1 (fr)
GB (1) GB1591223A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0037852A1 (fr) * 1980-03-07 1981-10-21 International Business Machines Corporation Raccordement pour circuit supra conducteur
EP0813237A1 (fr) * 1996-06-13 1997-12-17 Bull S.A. Procédé de montage d'un circuit intégré sur un support et support en résultant

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4609936A (en) * 1979-09-19 1986-09-02 Motorola, Inc. Semiconductor chip with direct-bonded external leadframe
EP0039160A3 (fr) * 1980-04-29 1982-08-25 Minnesota Mining And Manufacturing Company Méthode pour assembler des bosses conductrices aux circuits électroniques
JPS5925387B2 (ja) * 1980-06-10 1984-06-16 株式会社東芝 半導体装置
JPS601968A (ja) * 1983-06-17 1985-01-08 Matsushita Electric Ind Co Ltd 半導体装置
JPS6031244A (ja) * 1983-08-01 1985-02-18 Oki Electric Ind Co Ltd 半導体装置
US4600658A (en) * 1983-11-07 1986-07-15 Motorola, Inc. Metallization means and method for high temperature applications
US4495222A (en) * 1983-11-07 1985-01-22 Motorola, Inc. Metallization means and method for high temperature applications
US4607276A (en) * 1984-03-08 1986-08-19 Olin Corporation Tape packages
US4736236A (en) * 1984-03-08 1988-04-05 Olin Corporation Tape bonding material and structure for electronic circuit fabrication
JPS61141147A (ja) * 1984-12-13 1986-06-28 Nec Corp 半導体装置の製造方法
JPS62188333A (ja) * 1986-02-14 1987-08-17 Nec Corp 集積回路装置
JPS6341036A (ja) * 1986-08-06 1988-02-22 Nec Corp 半導体装置
JP2623578B2 (ja) * 1987-07-14 1997-06-25 日本電気株式会社 半導体集積回路装置
US5016082A (en) * 1988-09-16 1991-05-14 Delco Electronics Corporation Integrated circuit interconnect design
US5260603A (en) * 1990-01-25 1993-11-09 Kabushiki Kaisha Toshiba Electrode structure of semiconductor device for use in GaAs compound substrate
JP3269171B2 (ja) * 1993-04-08 2002-03-25 セイコーエプソン株式会社 半導体装置およびそれを有した時計
US5369300A (en) * 1993-06-10 1994-11-29 Delco Electronics Corporation Multilayer metallization for silicon semiconductor devices including a diffusion barrier formed of amorphous tungsten/silicon
US5517127A (en) * 1995-01-09 1996-05-14 International Business Machines Corporation Additive structure and method for testing semiconductor wire bond dies
US6078103A (en) * 1998-10-29 2000-06-20 Mcdonnell Douglas Corporation Dimpled contacts for metal-to-semiconductor connections, and methods for fabricating same
US7405149B1 (en) * 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US7381642B2 (en) 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
JP2005062582A (ja) * 2003-08-18 2005-03-10 Hitachi Displays Ltd 表示装置
JP4107275B2 (ja) * 2004-09-09 2008-06-25 セイコーエプソン株式会社 検査用プローブ及び検査装置、検査用プローブの製造方法
US7082844B1 (en) * 2005-02-16 2006-08-01 Cts Corporation Strain sensor having improved accuracy
US7441467B2 (en) * 2006-07-12 2008-10-28 Cts Corporation Compression strain sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657610A (en) * 1969-07-10 1972-04-18 Nippon Electric Co Self-sealing face-down bonded semiconductor device
FR2158230A1 (fr) * 1971-11-03 1973-06-15 Ibm

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1171088B (de) * 1962-02-16 1964-05-27 Intermetall Verfahren zum Kontaktieren von Hochfrequenztransistoren
US3763404A (en) * 1968-03-01 1973-10-02 Gen Electric Semiconductor devices and manufacture thereof
JPS4834686A (fr) * 1971-09-09 1973-05-21
US3740523A (en) * 1971-12-30 1973-06-19 Bell Telephone Labor Inc Encoding of read only memory by laser vaporization
DE2348323A1 (de) * 1973-09-26 1975-04-03 Licentia Gmbh Integrierte festkoerperschaltung mit einer vielzahl von bauelementen in einem gemeinsamen halbleiterkoerper
US4067039A (en) * 1975-03-17 1978-01-03 Motorola, Inc. Ultrasonic bonding head
US4032949A (en) * 1975-05-15 1977-06-28 Raytheon Company Integrated circuit fusing technique
US4000842A (en) * 1975-06-02 1977-01-04 National Semiconductor Corporation Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices
US4188438A (en) * 1975-06-02 1980-02-12 National Semiconductor Corporation Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices
JPS51147253A (en) * 1975-06-13 1976-12-17 Nec Corp Structure of electrode terminal
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657610A (en) * 1969-07-10 1972-04-18 Nippon Electric Co Self-sealing face-down bonded semiconductor device
FR2158230A1 (fr) * 1971-11-03 1973-06-15 Ibm

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0037852A1 (fr) * 1980-03-07 1981-10-21 International Business Machines Corporation Raccordement pour circuit supra conducteur
EP0037852B1 (fr) * 1980-03-07 1984-08-08 International Business Machines Corporation Raccordement pour circuit supra conducteur
EP0813237A1 (fr) * 1996-06-13 1997-12-17 Bull S.A. Procédé de montage d'un circuit intégré sur un support et support en résultant
WO1997048130A1 (fr) * 1996-06-13 1997-12-18 Bull S.A. Procede de montage d'un circuit integre sur un support et support en resultant
FR2749974A1 (fr) * 1996-06-13 1997-12-19 Bull Sa Procede de montage d'un circuit integre sur un support et support en resultant
US6305074B1 (en) 1996-06-13 2001-10-23 Bull, S.A. Support for integrated circuit and process for mounting an integrated circuit on a support

Also Published As

Publication number Publication date
DE2813968A1 (de) 1978-10-12
JPS53123074A (en) 1978-10-27
GB1591223A (en) 1981-06-17
DE2813968C2 (de) 1983-11-10
FR2386138B1 (fr) 1984-06-08
US4188636A (en) 1980-02-12

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