DE2804568A1 - Schnelles, transistoraehnliches halbleiterbauelement - Google Patents
Schnelles, transistoraehnliches halbleiterbauelementInfo
- Publication number
- DE2804568A1 DE2804568A1 DE19782804568 DE2804568A DE2804568A1 DE 2804568 A1 DE2804568 A1 DE 2804568A1 DE 19782804568 DE19782804568 DE 19782804568 DE 2804568 A DE2804568 A DE 2804568A DE 2804568 A1 DE2804568 A1 DE 2804568A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- emitter
- base
- collector
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 103
- 239000002800 charge carrier Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 21
- 230000000694 effects Effects 0.000 claims description 13
- 229910005542 GaSb Inorganic materials 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 19
- 230000007704 transition Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 238000001451 molecular beam epitaxy Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000005641 tunneling Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000006978 adaptation Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 244000089409 Erythrina poeppigiana Species 0.000 description 1
- 101100345589 Mus musculus Mical1 gene Proteins 0.000 description 1
- 235000009776 Rathbunia alamosensis Nutrition 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/805,055 US4173763A (en) | 1977-06-09 | 1977-06-09 | Heterojunction tunneling base transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2804568A1 true DE2804568A1 (de) | 1978-12-21 |
| DE2804568C2 DE2804568C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-03-16 |
Family
ID=25190572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19782804568 Granted DE2804568A1 (de) | 1977-06-09 | 1978-02-03 | Schnelles, transistoraehnliches halbleiterbauelement |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3118799A1 (de) * | 1980-05-16 | 1982-03-18 | Institut radiotechniki i elektroniki Akademii Nauk SSSR, Moskva | Halbleiterspeicher |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4353081A (en) * | 1980-01-29 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Graded bandgap rectifying semiconductor devices |
| CA1153825A (en) * | 1980-02-04 | 1983-09-13 | International Business Machines Corporation | Semiconductor device |
| US4286275A (en) * | 1980-02-04 | 1981-08-25 | International Business Machines Corporation | Semiconductor device |
| JPS5946103B2 (ja) * | 1980-03-10 | 1984-11-10 | 日本電信電話株式会社 | トランジスタ |
| JPS56133867A (en) * | 1980-03-21 | 1981-10-20 | Semiconductor Res Found | Thermoelectric emission transistor |
| US4801984A (en) * | 1980-06-12 | 1989-01-31 | International Business Machines Corporation | Semiconductor ohmic contact |
| US4395722A (en) * | 1980-10-21 | 1983-07-26 | The United States Of America As Represented By The Secretary Of The Army | Heterojunction transistor |
| US4380774A (en) * | 1980-12-19 | 1983-04-19 | The United States Of America As Represented By The Secretary Of The Navy | High-performance bipolar microwave transistor |
| US4371884A (en) * | 1981-01-23 | 1983-02-01 | The United States Of America As Represented By The Secretary Of The Army | InAs-GaSb Tunnel diode |
| FR2504732A1 (fr) * | 1981-04-27 | 1982-10-29 | Thomson Csf | Transistor tunnel a double heterojonction |
| US4396931A (en) * | 1981-06-12 | 1983-08-02 | International Business Machines Corporation | Tunnel emitter upper valley transistor |
| FR2508707A1 (fr) * | 1981-06-26 | 1982-12-31 | Thomson Csf | Transistor balistique a multiples heterojonctions |
| US4460910A (en) * | 1981-11-23 | 1984-07-17 | International Business Machines Corporation | Heterojunction semiconductor |
| US4750025A (en) * | 1981-12-04 | 1988-06-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Depletion stop transistor |
| US4743951A (en) * | 1982-03-08 | 1988-05-10 | International Business Machines Corporation | Field effect transistor |
| US4538165A (en) * | 1982-03-08 | 1985-08-27 | International Business Machines Corporation | FET With heterojunction induced channel |
| US4532533A (en) * | 1982-04-27 | 1985-07-30 | International Business Machines Corporation | Ballistic conduction semiconductor device |
| US4672404A (en) * | 1982-09-17 | 1987-06-09 | Cornell Research Foundation, Inc. | Ballistic heterojunction bipolar transistor |
| US4728616A (en) * | 1982-09-17 | 1988-03-01 | Cornell Research Foundation, Inc. | Ballistic heterojunction bipolar transistor |
| JPS59186367A (ja) * | 1983-04-06 | 1984-10-23 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| DE3334167A1 (de) * | 1983-09-21 | 1985-04-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterdiode |
| JPH0750714B2 (ja) * | 1984-01-30 | 1995-05-31 | 日本電気株式会社 | バイポーラトランジスタ |
| US4649405A (en) * | 1984-04-10 | 1987-03-10 | Cornell Research Foundation, Inc. | Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices |
| JPS61112373A (ja) * | 1984-11-07 | 1986-05-30 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポ−ラトランジスタ |
| US5060234A (en) * | 1984-11-19 | 1991-10-22 | Max-Planck Gesellschaft Zur Forderung Der Wissenschaften | Injection laser with at least one pair of monoatomic layers of doping atoms |
| JPS61248561A (ja) * | 1985-04-25 | 1986-11-05 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | 半導体構造体 |
| JP2773474B2 (ja) * | 1991-08-06 | 1998-07-09 | 日本電気株式会社 | 半導体装置 |
| GB2284299B (en) * | 1993-10-07 | 1997-05-28 | Hitachi Europ Ltd | Multiple tunnel junction structure |
| US6617643B1 (en) | 2002-06-28 | 2003-09-09 | Mcnc | Low power tunneling metal-oxide-semiconductor (MOS) device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3209215A (en) * | 1962-06-29 | 1965-09-28 | Ibm | Heterojunction triode |
| US3225272A (en) * | 1961-01-23 | 1965-12-21 | Bendix Corp | Semiconductor triode |
| US3358158A (en) * | 1961-02-06 | 1967-12-12 | Gen Electric | Semiconductor devices |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3211970A (en) * | 1957-05-06 | 1965-10-12 | Rca Corp | Semiconductor devices |
| US3459967A (en) * | 1959-12-11 | 1969-08-05 | Philips Corp | Transistor switching using a tunnel diode |
| US3254278A (en) * | 1960-11-14 | 1966-05-31 | Hoffman Electronics Corp | Tunnel diode device |
| US3417248A (en) * | 1962-03-27 | 1968-12-17 | Gen Electric | Tunneling semiconductor device exhibiting storage characteristics |
| US3317801A (en) * | 1963-06-19 | 1967-05-02 | Jr Freeman D Shepherd | Tunneling enhanced transistor |
| US3484657A (en) * | 1966-07-11 | 1969-12-16 | Susanna Gukasovna Madoian | Semiconductor device having intermetallic compounds providing stable parameter vs. time characteristics |
| FR2072114B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-12-30 | 1975-01-10 | Ibm | |
| US3780359A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Bipolar transistor with a heterojunction emitter and a method fabricating the same |
| US3821777A (en) * | 1972-09-22 | 1974-06-28 | Varian Associates | Avalanche photodiode |
| US3864721A (en) * | 1973-06-18 | 1975-02-04 | Us Army | Tunneling electroluminescent diode with voltage variable wavelength output |
| US3943554A (en) * | 1973-07-30 | 1976-03-09 | Signetics Corporation | Threshold switching integrated circuit and method for forming the same |
| US3995303A (en) * | 1975-06-05 | 1976-11-30 | Bell Telephone Laboratories, Incorporated | Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector |
-
1977
- 1977-06-09 US US05/805,055 patent/US4173763A/en not_active Expired - Lifetime
-
1978
- 1978-01-10 CA CA294,653A patent/CA1092723A/en not_active Expired
- 1978-01-27 IT IT19704/78A patent/IT1158445B/it active
- 1978-01-30 JP JP841478A patent/JPS544576A/ja active Granted
- 1978-02-01 FR FR787803453A patent/FR2394174A1/fr active Granted
- 1978-02-03 DE DE19782804568 patent/DE2804568A1/de active Granted
- 1978-03-01 GB GB8091/78A patent/GB1598145A/en not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3225272A (en) * | 1961-01-23 | 1965-12-21 | Bendix Corp | Semiconductor triode |
| US3358158A (en) * | 1961-02-06 | 1967-12-12 | Gen Electric | Semiconductor devices |
| US3209215A (en) * | 1962-06-29 | 1965-09-28 | Ibm | Heterojunction triode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3118799A1 (de) * | 1980-05-16 | 1982-03-18 | Institut radiotechniki i elektroniki Akademii Nauk SSSR, Moskva | Halbleiterspeicher |
Also Published As
| Publication number | Publication date |
|---|---|
| IT7819704A0 (it) | 1978-01-27 |
| GB1598145A (en) | 1981-09-16 |
| JPS544576A (en) | 1979-01-13 |
| IT1158445B (it) | 1987-02-18 |
| DE2804568C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-03-16 |
| FR2394174A1 (fr) | 1979-01-05 |
| CA1092723A (en) | 1980-12-30 |
| JPS5710580B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-02-26 |
| FR2394174B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-08-29 |
| US4173763A (en) | 1979-11-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |