DE69110080T2 - Metall-Isolator-Metall-Übergangsstrukturen mit justierbaren Barrierenhöhen und Herstellungsverfahren. - Google Patents

Metall-Isolator-Metall-Übergangsstrukturen mit justierbaren Barrierenhöhen und Herstellungsverfahren.

Info

Publication number
DE69110080T2
DE69110080T2 DE69110080T DE69110080T DE69110080T2 DE 69110080 T2 DE69110080 T2 DE 69110080T2 DE 69110080 T DE69110080 T DE 69110080T DE 69110080 T DE69110080 T DE 69110080T DE 69110080 T2 DE69110080 T2 DE 69110080T2
Authority
DE
Germany
Prior art keywords
metal
insulator
manufacturing processes
barrier heights
transition structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69110080T
Other languages
English (en)
Other versions
DE69110080D1 (de
Inventor
Alan Willis Kleinsasser
Jerry Macpherson Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69110080D1 publication Critical patent/DE69110080D1/de
Publication of DE69110080T2 publication Critical patent/DE69110080T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor
DE69110080T 1990-04-20 1991-03-08 Metall-Isolator-Metall-Übergangsstrukturen mit justierbaren Barrierenhöhen und Herstellungsverfahren. Expired - Lifetime DE69110080T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/512,245 US5019530A (en) 1990-04-20 1990-04-20 Method of making metal-insulator-metal junction structures with adjustable barrier heights

Publications (2)

Publication Number Publication Date
DE69110080D1 DE69110080D1 (de) 1995-07-06
DE69110080T2 true DE69110080T2 (de) 1995-12-21

Family

ID=24038286

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69110080T Expired - Lifetime DE69110080T2 (de) 1990-04-20 1991-03-08 Metall-Isolator-Metall-Übergangsstrukturen mit justierbaren Barrierenhöhen und Herstellungsverfahren.

Country Status (4)

Country Link
US (1) US5019530A (de)
EP (1) EP0452661B1 (de)
JP (1) JPH0652812B2 (de)
DE (1) DE69110080T2 (de)

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JP3051627B2 (ja) * 1993-02-03 2000-06-12 シャープ株式会社 表示装置およびその製造方法
GB9317256D0 (en) * 1993-08-19 1993-10-06 Boc Group Plc Molecular processes and apparatus therefore
JP2995284B2 (ja) * 1995-08-25 1999-12-27 工業技術院長 電極作成方法
MXPA01009136A (es) 1999-03-11 2003-07-14 Eneco Inc Convetidor termionico hibrido y metodo.
US6396191B1 (en) 1999-03-11 2002-05-28 Eneco, Inc. Thermal diode for energy conversion
US7109408B2 (en) 1999-03-11 2006-09-19 Eneco, Inc. Solid state energy converter
US6198113B1 (en) 1999-04-22 2001-03-06 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
GB2370912A (en) * 1999-10-05 2002-07-10 Seagate Technology Llc Integrated on-board device and method for the protection of magnetoresistive heads from electrostatic discharge
US7615402B1 (en) 2000-07-07 2009-11-10 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
US6507046B2 (en) * 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
US6967347B2 (en) * 2001-05-21 2005-11-22 The Regents Of The University Of Colorado Terahertz interconnect system and applications
US7173275B2 (en) * 2001-05-21 2007-02-06 Regents Of The University Of Colorado Thin-film transistors based on tunneling structures and applications
US6779347B2 (en) 2001-05-21 2004-08-24 C.P. Baker Securities, Inc. Solid-state thermionic refrigeration
US7126151B2 (en) * 2001-05-21 2006-10-24 The Regents Of The University Of Colorado, A Body Corporate Interconnected high speed electron tunneling devices
US6563185B2 (en) * 2001-05-21 2003-05-13 The Regents Of The University Of Colorado High speed electron tunneling device and applications
US7388276B2 (en) * 2001-05-21 2008-06-17 The Regents Of The University Of Colorado Metal-insulator varactor devices
WO2003038499A1 (fr) * 2001-11-01 2003-05-08 Mitsubishi Rayon Co.,Ltd. Multiplexeur/demultiplexeur optique, procede de multiplexage/demultiplexage optique et filtre optique
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6946596B2 (en) 2002-09-13 2005-09-20 Kucherov Yan R Tunneling-effect energy converters
EP1779440A4 (de) * 2004-07-08 2009-04-15 Univ Colorado Metall-isolator-varactor-bauelemente
KR100639990B1 (ko) * 2004-12-08 2006-10-31 한국전자통신연구원 급격한 금속-절연체 전이 소자 및 그 제조방법
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US7977668B2 (en) * 2007-05-23 2011-07-12 Northwestern University Multilayer structure with zirconium-oxide tunnel barriers and applications of same
CN101755338B (zh) * 2007-07-18 2012-10-10 松下电器产业株式会社 电流限制元件和使用它的存储器装置
EP2232559B1 (de) * 2007-09-26 2019-05-15 STMicroelectronics N.V. Einstellbarer feldeffektgleichrichter
US8148748B2 (en) * 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
WO2010080855A2 (en) * 2009-01-06 2010-07-15 Lakota Technologies Inc. Self-bootstrapping field effect diode structures and methods
WO2010127370A2 (en) * 2009-05-01 2010-11-04 Lakota Technologies, Inc. Series current limiting device
JP5598015B2 (ja) * 2010-02-23 2014-10-01 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法
US9024297B2 (en) 2010-09-17 2015-05-05 The Governors Of The University Of Alberta Two- and three-terminal molecular electronic devices with ballistic electron transport
WO2013077954A1 (en) 2011-11-23 2013-05-30 Acorn Technologies, Inc. Improving metal contacts to group iv semiconductors by inserting interfacial atomic monolayers
EP2839509B1 (de) * 2012-04-19 2020-05-27 Carnegie Mellon University Metall-halbleiter-metall (msm)-heteroübergangsdiode
WO2014039550A1 (en) 2012-09-04 2014-03-13 Carnegie Mellon University A hot-electron transistor having metal terminals
US9019744B2 (en) * 2012-12-27 2015-04-28 Intermolecular, Inc. Barrier design for steering elements
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
US10170627B2 (en) 2016-11-18 2019-01-01 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height

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FR2086887A5 (de) * 1970-04-13 1971-12-31 Air Liquide
US3938243A (en) * 1973-02-20 1976-02-17 Signetics Corporation Schottky barrier diode semiconductor structure and method
US4107724A (en) * 1974-12-17 1978-08-15 U.S. Philips Corporation Surface controlled field effect solid state device
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
US4176365A (en) * 1978-05-08 1979-11-27 Sperry Rand Corporation Josephson tunnel junction device with hydrogenated amorphous silicon, germanium or silicon-germanium alloy tunneling barrier
US4220959A (en) * 1979-03-23 1980-09-02 Sperry Corporation Josephson tunnel junction with polycrystalline silicon, germanium or silicon-germanium alloy tunneling barrier
JPS56144577A (en) * 1980-04-10 1981-11-10 Fujitsu Ltd Production of semiconductor device
US4421577A (en) * 1980-11-10 1983-12-20 The Board Of Trustees Of The Leland Stanford, Junior University Method for making Schottky barrier diodes with engineered heights
US4371884A (en) * 1981-01-23 1983-02-01 The United States Of America As Represented By The Secretary Of The Army InAs-GaSb Tunnel diode
US4449140A (en) * 1981-12-24 1984-05-15 National Research Development Corporation Semi-conductor barrier switching devices
US4638342A (en) * 1982-09-17 1987-01-20 International Business Machines Corporation Space charge modulation device
US4490733A (en) * 1982-10-15 1984-12-25 Sperry Corporation Josephson device with tunneling barrier having low density of localized states and enhanced figures of merit
US4946803A (en) * 1982-12-08 1990-08-07 North American Philips Corp., Signetics Division Method for manufacturing a Schottky-type rectifier having controllable barrier height
JPH0624251B2 (ja) * 1986-01-08 1994-03-30 富士通株式会社 光半導体装置
FR2813310B1 (fr) * 2000-08-25 2002-11-29 Inst Francais Du Petrole Procede de separation de paraffines multibranchees utilisant un absorbant zeolitique de structure mixte

Also Published As

Publication number Publication date
EP0452661A2 (de) 1991-10-23
US5019530A (en) 1991-05-28
JPH0652812B2 (ja) 1994-07-06
EP0452661A3 (en) 1991-11-27
EP0452661B1 (de) 1995-05-31
DE69110080D1 (de) 1995-07-06
JPH0541551A (ja) 1993-02-19

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