FR2394174A1 - Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse - Google Patents

Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse

Info

Publication number
FR2394174A1
FR2394174A1 FR787803453A FR7803453A FR2394174A1 FR 2394174 A1 FR2394174 A1 FR 2394174A1 FR 787803453 A FR787803453 A FR 787803453A FR 7803453 A FR7803453 A FR 7803453A FR 2394174 A1 FR2394174 A1 FR 2394174A1
Authority
FR
France
Prior art keywords
base
collector
heterojunctions
speed
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR787803453A
Other languages
English (en)
French (fr)
Other versions
FR2394174B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Leroy L Chang
Leo Esaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2394174A1 publication Critical patent/FR2394174A1/fr
Application granted granted Critical
Publication of FR2394174B1 publication Critical patent/FR2394174B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
FR787803453A 1977-06-09 1978-02-01 Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse Granted FR2394174A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/805,055 US4173763A (en) 1977-06-09 1977-06-09 Heterojunction tunneling base transistor

Publications (2)

Publication Number Publication Date
FR2394174A1 true FR2394174A1 (fr) 1979-01-05
FR2394174B1 FR2394174B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-08-29

Family

ID=25190572

Family Applications (1)

Application Number Title Priority Date Filing Date
FR787803453A Granted FR2394174A1 (fr) 1977-06-09 1978-02-01 Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse

Country Status (7)

Country Link
US (1) US4173763A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS544576A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1092723A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2804568A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2394174A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1598145A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1158445B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0033496A3 (en) * 1980-02-04 1982-04-14 International Business Machines Corporation Three-terminal semiconductor device
EP0033876A3 (en) * 1980-02-04 1982-04-21 International Business Machines Corporation Three-terminal semiconductor device
FR2504732A1 (fr) * 1981-04-27 1982-10-29 Thomson Csf Transistor tunnel a double heterojonction
EP0067276A1 (en) * 1981-06-12 1982-12-22 International Business Machines Corporation Transistor with tunnel emitter and upper energy valley base
FR2508707A1 (fr) * 1981-06-26 1982-12-31 Thomson Csf Transistor balistique a multiples heterojonctions
EP0092643A3 (en) * 1982-04-27 1986-10-01 International Business Machines Corporation Ballistic conduction transistor

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ
JPS56133867A (en) * 1980-03-21 1981-10-20 Semiconductor Res Found Thermoelectric emission transistor
SU1005223A1 (ru) * 1980-05-16 1983-03-15 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Полупроводниковое запоминающее устройство
US4801984A (en) * 1980-06-12 1989-01-31 International Business Machines Corporation Semiconductor ohmic contact
US4395722A (en) * 1980-10-21 1983-07-26 The United States Of America As Represented By The Secretary Of The Army Heterojunction transistor
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
US4371884A (en) * 1981-01-23 1983-02-01 The United States Of America As Represented By The Secretary Of The Army InAs-GaSb Tunnel diode
US4460910A (en) * 1981-11-23 1984-07-17 International Business Machines Corporation Heterojunction semiconductor
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
US4743951A (en) * 1982-03-08 1988-05-10 International Business Machines Corporation Field effect transistor
US4538165A (en) * 1982-03-08 1985-08-27 International Business Machines Corporation FET With heterojunction induced channel
US4672404A (en) * 1982-09-17 1987-06-09 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4728616A (en) * 1982-09-17 1988-03-01 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
JPS59186367A (ja) * 1983-04-06 1984-10-23 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
DE3334167A1 (de) * 1983-09-21 1985-04-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterdiode
JPH0750714B2 (ja) * 1984-01-30 1995-05-31 日本電気株式会社 バイポーラトランジスタ
US4649405A (en) * 1984-04-10 1987-03-10 Cornell Research Foundation, Inc. Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices
JPS61112373A (ja) * 1984-11-07 1986-05-30 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタ
US5060234A (en) * 1984-11-19 1991-10-22 Max-Planck Gesellschaft Zur Forderung Der Wissenschaften Injection laser with at least one pair of monoatomic layers of doping atoms
JPS61248561A (ja) * 1985-04-25 1986-11-05 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 半導体構造体
JP2773474B2 (ja) * 1991-08-06 1998-07-09 日本電気株式会社 半導体装置
GB2284299B (en) * 1993-10-07 1997-05-28 Hitachi Europ Ltd Multiple tunnel junction structure
US6617643B1 (en) 2002-06-28 2003-09-09 Mcnc Low power tunneling metal-oxide-semiconductor (MOS) device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2072114A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1969-12-30 1971-09-24 Ibm
FR2164634A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-12-20 1973-08-03 Ibm

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
US3459967A (en) * 1959-12-11 1969-08-05 Philips Corp Transistor switching using a tunnel diode
US3254278A (en) * 1960-11-14 1966-05-31 Hoffman Electronics Corp Tunnel diode device
US3225272A (en) * 1961-01-23 1965-12-21 Bendix Corp Semiconductor triode
US3358158A (en) * 1961-02-06 1967-12-12 Gen Electric Semiconductor devices
US3417248A (en) * 1962-03-27 1968-12-17 Gen Electric Tunneling semiconductor device exhibiting storage characteristics
NL294716A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-06-29 1900-01-01
US3317801A (en) * 1963-06-19 1967-05-02 Jr Freeman D Shepherd Tunneling enhanced transistor
US3484657A (en) * 1966-07-11 1969-12-16 Susanna Gukasovna Madoian Semiconductor device having intermetallic compounds providing stable parameter vs. time characteristics
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode
US3864721A (en) * 1973-06-18 1975-02-04 Us Army Tunneling electroluminescent diode with voltage variable wavelength output
US3943554A (en) * 1973-07-30 1976-03-09 Signetics Corporation Threshold switching integrated circuit and method for forming the same
US3995303A (en) * 1975-06-05 1976-11-30 Bell Telephone Laboratories, Incorporated Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2072114A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1969-12-30 1971-09-24 Ibm
FR2164634A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-12-20 1973-08-03 Ibm

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0033496A3 (en) * 1980-02-04 1982-04-14 International Business Machines Corporation Three-terminal semiconductor device
EP0033876A3 (en) * 1980-02-04 1982-04-21 International Business Machines Corporation Three-terminal semiconductor device
FR2504732A1 (fr) * 1981-04-27 1982-10-29 Thomson Csf Transistor tunnel a double heterojonction
EP0067276A1 (en) * 1981-06-12 1982-12-22 International Business Machines Corporation Transistor with tunnel emitter and upper energy valley base
FR2508707A1 (fr) * 1981-06-26 1982-12-31 Thomson Csf Transistor balistique a multiples heterojonctions
EP0070211A1 (fr) * 1981-06-26 1983-01-19 Thomson-Csf Transistor balistique à multiples hétérojonctions
EP0092643A3 (en) * 1982-04-27 1986-10-01 International Business Machines Corporation Ballistic conduction transistor

Also Published As

Publication number Publication date
IT7819704A0 (it) 1978-01-27
GB1598145A (en) 1981-09-16
JPS544576A (en) 1979-01-13
IT1158445B (it) 1987-02-18
DE2804568C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-03-16
CA1092723A (en) 1980-12-30
DE2804568A1 (de) 1978-12-21
JPS5710580B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-02-26
FR2394174B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-08-29
US4173763A (en) 1979-11-06

Similar Documents

Publication Publication Date Title
FR2394174A1 (fr) Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse
FR2414796A1 (fr) Dispositif semi-conducteur mis a heterojonction
JPS56124273A (en) Semiconductor device
FR2376513A1 (fr) Dispositif semiconducteur muni d'un film protecteur
JPS56501181A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4060826A (en) Light activated thyristor capable of activation by intensity radiation
KR930003436A (ko) 이질접합 계면을 가지며, 캐리어를 고속으로 운송하는 반도체 장치
EP0323220A3 (en) Hetero junction field effect transistor device
US2919388A (en) Semiconductor devices
KR910003781A (ko) 선택적으로 도핑된 헤테로 구조를 갖는 반도체 장치
FR2408914A1 (fr) Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
KR920005385A (ko) 반도체장치
JPS5466080A (en) Semiconductor device
EP0380249A3 (en) Insulated gate bipolar transistor
JP2601862B2 (ja) アノードショート型導電変調ｍｏｓｆｅｔ
JPS52100979A (en) Production and drive of dual gate schottky barrier gate type fieled ef fect transistor
JPS5946106B2 (ja) 超高速トランジスタ
FR2413785A1 (fr) Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky
JPS6484667A (en) Insulated-gate transistor
FR2406307A1 (fr) Dispositif semiconducteur a surface passivee et procede d'obtention de ce dispositif
KR100340877B1 (ko) 쇼트키 다이오드를 갖는 고이득·저포화전압 트랜지스터
JPS5587492A (en) Field effect type semiconductor device
FR2377123A1 (fr) Circuit logique integre
JPS55160458A (en) Electrostatic induction type semiconductor logic circuit device
JPH01212468A (ja) 半導体トランジスタ

Legal Events

Date Code Title Description
ST Notification of lapse