DE2754397A1 - Verfahren zur herstellung eines schottky-sperrschicht-kontaktes - Google Patents

Verfahren zur herstellung eines schottky-sperrschicht-kontaktes

Info

Publication number
DE2754397A1
DE2754397A1 DE19772754397 DE2754397A DE2754397A1 DE 2754397 A1 DE2754397 A1 DE 2754397A1 DE 19772754397 DE19772754397 DE 19772754397 DE 2754397 A DE2754397 A DE 2754397A DE 2754397 A1 DE2754397 A1 DE 2754397A1
Authority
DE
Germany
Prior art keywords
contact
substrate
ring zone
metal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19772754397
Other languages
German (de)
English (en)
Inventor
Peter Paul Peressini
Timothy Martin Reith
Michael James Sullivan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2754397A1 publication Critical patent/DE2754397A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H10P30/22—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10P30/204—
    • H10P30/21—
    • H10P30/212—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE19772754397 1976-12-27 1977-12-07 Verfahren zur herstellung eines schottky-sperrschicht-kontaktes Withdrawn DE2754397A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/754,218 US4063964A (en) 1976-12-27 1976-12-27 Method for forming a self-aligned schottky barrier device guardring

Publications (1)

Publication Number Publication Date
DE2754397A1 true DE2754397A1 (de) 1978-06-29

Family

ID=25033902

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772754397 Withdrawn DE2754397A1 (de) 1976-12-27 1977-12-07 Verfahren zur herstellung eines schottky-sperrschicht-kontaktes

Country Status (5)

Country Link
US (1) US4063964A (enExample)
JP (1) JPS5382165A (enExample)
DE (1) DE2754397A1 (enExample)
FR (1) FR2375723A1 (enExample)
GB (1) GB1538370A (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631873C2 (de) * 1976-07-15 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand
JPS5950107B2 (ja) * 1977-06-20 1984-12-06 三菱電機株式会社 半導体装置
US4119446A (en) * 1977-08-11 1978-10-10 Motorola Inc. Method for forming a guarded Schottky barrier diode by ion-implantation
US4206540A (en) * 1978-06-02 1980-06-10 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier
US4261095A (en) * 1978-12-11 1981-04-14 International Business Machines Corporation Self aligned schottky guard ring
FR2460040A1 (fr) * 1979-06-22 1981-01-16 Thomson Csf Procede pour realiser une diode schottky a tenue en tension amelioree
JPS57181172A (en) * 1981-04-30 1982-11-08 Toshiba Corp Schottky barrier diode and manufacture thereof
US4691435A (en) * 1981-05-13 1987-09-08 International Business Machines Corporation Method for making Schottky diode having limited area self-aligned guard ring
DE3124572A1 (de) * 1981-06-23 1982-12-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von schottky-dioden
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
JPS59145582A (ja) * 1983-02-09 1984-08-21 Futaba Corp 鉄けい化物熱電変換素子
US4638345A (en) * 1983-06-01 1987-01-20 Rca Corporation IR imaging array and method of making same
US4874714A (en) * 1988-06-02 1989-10-17 Texas Instruments Incorporated Method of making laterally oriented Schottky diode
US5859465A (en) * 1996-10-15 1999-01-12 International Rectifier Corporation High voltage power schottky with aluminum barrier metal spaced from first diffused ring
US6145565A (en) * 1997-05-22 2000-11-14 Fromson; Howard A. Laser imageable printing plate and substrate therefor
FR2764117B1 (fr) * 1997-05-30 1999-08-13 Sgs Thomson Microelectronics Contact sur une region de type p
DE19939484A1 (de) * 1998-09-01 2000-03-09 Int Rectifier Corp Schottky-Diode
US6184564B1 (en) * 1998-12-28 2001-02-06 International Rectifier Corp. Schottky diode with adjusted barrier height and process for its manufacture
US6121122A (en) * 1999-05-17 2000-09-19 International Business Machines Corporation Method of contacting a silicide-based schottky diode
DE10330838B4 (de) 2003-07-08 2005-08-25 Infineon Technologies Ag Elektronisches Bauelement mit Schutzring
US7229866B2 (en) * 2004-03-15 2007-06-12 Velox Semiconductor Corporation Non-activated guard ring for semiconductor devices
US7952139B2 (en) * 2005-02-11 2011-05-31 Alpha & Omega Semiconductor Ltd. Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
RU2452191C2 (ru) * 2006-10-20 2012-06-10 Вм. Ригли Дж. Компани Машина и способ изготовления кондитерского продукта
US8722117B2 (en) * 2008-06-04 2014-05-13 Wm. Wrigley Jr. Company Method and apparatus for thermal sealing a filled confectionery product
US9093521B2 (en) * 2008-06-30 2015-07-28 Alpha And Omega Semiconductor Incorporated Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
TWI384625B (zh) * 2008-06-30 2013-02-01 萬國半導體股份有限公司 提高蕭特基崩潰電壓且不影響金氧半導體-蕭特基整合裝置之裝置佈局及方法
JP5546759B2 (ja) * 2008-08-05 2014-07-09 トヨタ自動車株式会社 半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3550260A (en) * 1968-12-26 1970-12-29 Motorola Inc Method for making a hot carrier pn-diode
US3669730A (en) * 1970-04-24 1972-06-13 Bell Telephone Labor Inc Modifying barrier layer devices

Also Published As

Publication number Publication date
GB1538370A (en) 1979-01-17
FR2375723B1 (enExample) 1980-08-22
US4063964A (en) 1977-12-20
JPS5649461B2 (enExample) 1981-11-21
FR2375723A1 (fr) 1978-07-21
JPS5382165A (en) 1978-07-20

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee