DE2742935C3 - Nichtflüchtiger Langzeitspeicher - Google Patents
Nichtflüchtiger LangzeitspeicherInfo
- Publication number
- DE2742935C3 DE2742935C3 DE2742935A DE2742935A DE2742935C3 DE 2742935 C3 DE2742935 C3 DE 2742935C3 DE 2742935 A DE2742935 A DE 2742935A DE 2742935 A DE2742935 A DE 2742935A DE 2742935 C3 DE2742935 C3 DE 2742935C3
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- substrate
- insulating layer
- memory according
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007774 longterm Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 63
- 239000004065 semiconductor Substances 0.000 claims description 39
- 230000015654 memory Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000002800 charge carrier Substances 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000007787 long-term memory Effects 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 208000035155 Mitochondrial DNA-associated Leigh syndrome Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 208000003531 maternally-inherited Leigh syndrome Diseases 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/005—Arrangements for selecting an address in a digital store with travelling wave access
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7628766A FR2365859A1 (fr) | 1976-09-24 | 1976-09-24 | Memoire non volatile pour signaux rapides |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2742935A1 DE2742935A1 (de) | 1978-03-30 |
| DE2742935B2 DE2742935B2 (de) | 1980-03-06 |
| DE2742935C3 true DE2742935C3 (de) | 1980-11-06 |
Family
ID=9178048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2742935A Expired DE2742935C3 (de) | 1976-09-24 | 1977-09-23 | Nichtflüchtiger Langzeitspeicher |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4122543A (ref) |
| DE (1) | DE2742935C3 (ref) |
| FR (1) | FR2365859A1 (ref) |
| GB (1) | GB1592675A (ref) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4246502A (en) * | 1978-08-16 | 1981-01-20 | Mitel Corporation | Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom |
| DE2844878A1 (de) * | 1978-10-14 | 1980-04-30 | Itt Ind Gmbh Deutsche | Integrierbarer isolierschicht-feldeffekttransistor |
| US4314265A (en) * | 1979-01-24 | 1982-02-02 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory devices with four layer electrodes |
| DE2918888C2 (de) * | 1979-05-10 | 1984-10-18 | Siemens AG, 1000 Berlin und 8000 München | MNOS-Speicherzelle und Verfahren zu ihrem Betrieb sowie zu ihrer Herstellung |
| US4247916A (en) * | 1979-10-30 | 1981-01-27 | Erb Darrell M | Memory device in which one type carrier stored during write controls the flow of the other type carrier during read |
| DE3312094A1 (de) * | 1983-04-02 | 1984-10-11 | Licentia Patent-Verwaltungs-Gmbh | Zentralelektronik |
| US5291439A (en) * | 1991-09-12 | 1994-03-01 | International Business Machines Corporation | Semiconductor memory cell and memory array with inversion layer |
| EP0977267B1 (en) * | 1998-07-30 | 2007-07-04 | STMicroelectronics S.r.l. | Non volatile memory structure and corresponding manufacturing process |
| KR101192358B1 (ko) * | 2007-07-31 | 2012-10-18 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 프로그래밍 방법 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3697962A (en) * | 1970-11-27 | 1972-10-10 | Ibm | Two device monolithic bipolar memory array |
-
1976
- 1976-09-24 FR FR7628766A patent/FR2365859A1/fr active Granted
-
1977
- 1977-09-20 US US05/835,009 patent/US4122543A/en not_active Expired - Lifetime
- 1977-09-21 GB GB39432/77A patent/GB1592675A/en not_active Expired
- 1977-09-23 DE DE2742935A patent/DE2742935C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1592675A (en) | 1981-07-08 |
| US4122543A (en) | 1978-10-24 |
| DE2742935A1 (de) | 1978-03-30 |
| FR2365859A1 (fr) | 1978-04-21 |
| FR2365859B1 (ref) | 1979-01-12 |
| DE2742935B2 (de) | 1980-03-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |