DE2727788C2 - Verfahren zum Herstellen eines Musters in einer Oberflächenschicht eines scheibenförmigen Körpers - Google Patents
Verfahren zum Herstellen eines Musters in einer Oberflächenschicht eines scheibenförmigen KörpersInfo
- Publication number
- DE2727788C2 DE2727788C2 DE2727788A DE2727788A DE2727788C2 DE 2727788 C2 DE2727788 C2 DE 2727788C2 DE 2727788 A DE2727788 A DE 2727788A DE 2727788 A DE2727788 A DE 2727788A DE 2727788 C2 DE2727788 C2 DE 2727788C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- etching
- photoresist mask
- disk
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002344 surface layer Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000005530 etching Methods 0.000 claims description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims description 36
- 239000010410 layer Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 210000002381 plasma Anatomy 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- -1 CF 4 Chemical class 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
- H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7607298A NL7607298A (nl) | 1976-07-02 | 1976-07-02 | Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2727788A1 DE2727788A1 (de) | 1978-01-05 |
| DE2727788C2 true DE2727788C2 (de) | 1982-08-19 |
Family
ID=19826508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2727788A Expired DE2727788C2 (de) | 1976-07-02 | 1977-06-21 | Verfahren zum Herstellen eines Musters in einer Oberflächenschicht eines scheibenförmigen Körpers |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4293375A (enExample) |
| JP (1) | JPS6031100B2 (enExample) |
| CA (1) | CA1097434A (enExample) |
| CH (1) | CH630961A5 (enExample) |
| DE (1) | DE2727788C2 (enExample) |
| FR (1) | FR2356739A1 (enExample) |
| GB (1) | GB1571034A (enExample) |
| IT (1) | IT1081122B (enExample) |
| NL (1) | NL7607298A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4183780A (en) * | 1978-08-21 | 1980-01-15 | International Business Machines Corporation | Photon enhanced reactive ion etching |
| JPS5775429A (en) * | 1980-10-28 | 1982-05-12 | Toshiba Corp | Manufacture of semiconductor device |
| DE3173581D1 (en) * | 1980-10-28 | 1986-03-06 | Toshiba Kk | Masking process for semiconductor devices using a polymer film |
| EP0057738B1 (de) * | 1981-02-07 | 1986-10-15 | Ibm Deutschland Gmbh | Verfahren zum Herstellen und Füllen von Löchern in einer auf einem Substrat aufliegenden Schicht |
| JPS57170535A (en) * | 1981-04-15 | 1982-10-20 | Toshiba Corp | Etching method for thin silicon film |
| DE3215410A1 (de) * | 1982-04-24 | 1983-10-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen von oeffnungen mit hilfe einer maske in einer auf einer unterlage befindlichen schicht |
| US4461672A (en) * | 1982-11-18 | 1984-07-24 | Texas Instruments, Inc. | Process for etching tapered vias in silicon dioxide |
| US4522681A (en) * | 1984-04-23 | 1985-06-11 | General Electric Company | Method for tapered dry etching |
| DE3903699A1 (de) * | 1988-02-08 | 1989-08-17 | Ricoh Kk | Bildsensor |
| US4978420A (en) * | 1990-01-03 | 1990-12-18 | Hewlett-Packard Company | Single chamber via etch through a dual-layer dielectric |
| JPH0964366A (ja) * | 1995-08-23 | 1997-03-07 | Toshiba Corp | 薄膜トランジスタ |
| JP2016219452A (ja) * | 2015-05-14 | 2016-12-22 | 富士通株式会社 | 多層基板及び多層基板の製造方法 |
| CN111725063B (zh) * | 2020-06-19 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 半导体衬底的刻蚀方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3483108A (en) * | 1967-05-29 | 1969-12-09 | Gen Electric | Method of chemically etching a non-conductive material using an electrolytically controlled mask |
| DE2117199C3 (de) * | 1971-04-08 | 1974-08-22 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen |
| US3767490A (en) * | 1971-06-29 | 1973-10-23 | Ibm | Process for etching organic coating layers |
| US3795557A (en) * | 1972-05-12 | 1974-03-05 | Lfe Corp | Process and material for manufacturing semiconductor devices |
| NL7213625A (enExample) * | 1972-10-07 | 1974-04-09 | ||
| US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
| US3839111A (en) * | 1973-08-20 | 1974-10-01 | Rca Corp | Method of etching silicon oxide to produce a tapered edge thereon |
| IT1040004B (it) * | 1974-08-21 | 1979-12-20 | Rca Corp | Metodo per la creazione del con torno marginale di una lastrina di materiale semiconduttore |
| JPS51117136A (en) * | 1975-04-09 | 1976-10-15 | Tokyo Shibaura Electric Co | Plasma etching process |
| US3986912A (en) * | 1975-09-04 | 1976-10-19 | International Business Machines Corporation | Process for controlling the wall inclination of a plasma etched via hole |
-
1976
- 1976-07-02 NL NL7607298A patent/NL7607298A/xx not_active Application Discontinuation
-
1977
- 1977-06-21 DE DE2727788A patent/DE2727788C2/de not_active Expired
- 1977-06-29 IT IT25218/77A patent/IT1081122B/it active
- 1977-06-29 GB GB27194/77A patent/GB1571034A/en not_active Expired
- 1977-06-29 JP JP52076682A patent/JPS6031100B2/ja not_active Expired
- 1977-06-29 CA CA281,727A patent/CA1097434A/en not_active Expired
- 1977-06-29 CH CH800477A patent/CH630961A5/de not_active IP Right Cessation
- 1977-07-01 FR FR7720247A patent/FR2356739A1/fr active Granted
-
1979
- 1979-06-13 US US06/047,979 patent/US4293375A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| IT1081122B (it) | 1985-05-16 |
| FR2356739A1 (fr) | 1978-01-27 |
| CA1097434A (en) | 1981-03-10 |
| DE2727788A1 (de) | 1978-01-05 |
| JPS535974A (en) | 1978-01-19 |
| CH630961A5 (de) | 1982-07-15 |
| FR2356739B1 (enExample) | 1982-06-18 |
| JPS6031100B2 (ja) | 1985-07-20 |
| NL7607298A (nl) | 1978-01-04 |
| US4293375A (en) | 1981-10-06 |
| GB1571034A (en) | 1980-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: NEHMZOW-DAVID, F., PAT.-ASS., 2000 HAMBURG |
|
| 8339 | Ceased/non-payment of the annual fee |