DE2722045A1 - Verfahren zur herstellung duenner halbleiterschichten und -laminate sowie von solarzellen und danach erhaltene schichten, laminate und bauelemente, insbesondere solarzellen - Google Patents

Verfahren zur herstellung duenner halbleiterschichten und -laminate sowie von solarzellen und danach erhaltene schichten, laminate und bauelemente, insbesondere solarzellen

Info

Publication number
DE2722045A1
DE2722045A1 DE19772722045 DE2722045A DE2722045A1 DE 2722045 A1 DE2722045 A1 DE 2722045A1 DE 19772722045 DE19772722045 DE 19772722045 DE 2722045 A DE2722045 A DE 2722045A DE 2722045 A1 DE2722045 A1 DE 2722045A1
Authority
DE
Germany
Prior art keywords
layer
semiconductor
sulfide
colloidal suspension
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19772722045
Other languages
German (de)
English (en)
Inventor
William Andrew Barlow
Maurice Rhodes
Francis Raymond Sherliker
Edward Watkin Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imperial Chemical Industries Ltd
Original Assignee
Imperial Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial Chemical Industries Ltd filed Critical Imperial Chemical Industries Ltd
Publication of DE2722045A1 publication Critical patent/DE2722045A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/02—Electrophoretic coating characterised by the process with inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/169—Photovoltaic cells having only PN heterojunction potential barriers comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19772722045 1976-05-17 1977-05-16 Verfahren zur herstellung duenner halbleiterschichten und -laminate sowie von solarzellen und danach erhaltene schichten, laminate und bauelemente, insbesondere solarzellen Ceased DE2722045A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB20199/76A GB1573320A (en) 1976-05-17 1976-05-17 Electrophopretic deposition of inorganic films

Publications (1)

Publication Number Publication Date
DE2722045A1 true DE2722045A1 (de) 1977-12-08

Family

ID=10142064

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772722045 Ceased DE2722045A1 (de) 1976-05-17 1977-05-16 Verfahren zur herstellung duenner halbleiterschichten und -laminate sowie von solarzellen und danach erhaltene schichten, laminate und bauelemente, insbesondere solarzellen

Country Status (11)

Country Link
US (1) US4225408A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS52155994A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU509321B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE854762A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1086682A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2722045A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (2) ES458847A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2352078A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1573320A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1143661B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7705384A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3328899A1 (de) * 1983-08-10 1985-02-28 Nukem Gmbh, 6450 Hanau Verfahren zum herstellen von frontseitigem elektrisch leitendem kontakt fuer photovoltaische zellen

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2861418D1 (en) * 1977-11-15 1982-01-28 Ici Plc A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films
JPS55500237A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-04-27 1980-04-24
GB2117796B (en) * 1982-04-06 1985-06-19 Standard Telephones Cables Ltd Forming ceramic layers; dielectric structures
GB2117795A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Fabricating capacitors; forming ceramic films
US4584074A (en) * 1982-12-07 1986-04-22 International Standard Electric Corporation Capacitors
US4695356A (en) * 1984-01-26 1987-09-22 Andromaque S.A. Electrochemical procedure for the direct forming of generally thin elements with various contours and surfaces of usual and technical ceramics or refractory material
US4952446A (en) * 1986-02-10 1990-08-28 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
GB8715082D0 (en) * 1987-06-26 1987-08-05 Prutec Ltd Solar cells
WO1993011283A1 (en) * 1991-11-27 1993-06-10 Minnesota Mining And Manufacturing Company Electrophoretic deposition of transition metal dichalcogenides
US5498270A (en) * 1994-09-12 1996-03-12 Smith; Strom W. Sulfur trap
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6965196B2 (en) * 1997-08-04 2005-11-15 Lumimove, Inc. Electroluminescent sign
US6268014B1 (en) 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US20010042329A1 (en) * 2000-04-13 2001-11-22 Matthew Murasko Electroluminescent sign
SE519287C2 (sv) * 2000-08-31 2003-02-11 Ericsson Telefon Ab L M Inkapslat mönsterkort med sekventiellt uppbyggd ledningsmönster och tillverkningsförfarande
WO2002077953A1 (en) * 2001-03-21 2002-10-03 Lumimove, Inc. Illuminated display system
US7048400B2 (en) * 2001-03-22 2006-05-23 Lumimove, Inc. Integrated illumination system
ATE377257T1 (de) * 2001-03-22 2007-11-15 Lumimove Inc Beleuchtetes anzeigesystem und prozess
US20030015962A1 (en) * 2001-06-27 2003-01-23 Matthew Murasko Electroluminescent panel having controllable transparency
US20030159941A1 (en) * 2002-02-11 2003-08-28 Applied Materials, Inc. Additives for electroplating solution
CN1830753A (zh) * 2005-03-10 2006-09-13 清华大学 碳纳米管组装方法和碳纳米管器件
CN1840465B (zh) * 2005-03-30 2010-09-29 清华大学 一维纳米材料器件制造方法
CN100572260C (zh) * 2005-03-31 2009-12-23 清华大学 一维纳米材料器件的制造方法
US8748216B2 (en) 2010-10-25 2014-06-10 Imra America, Inc. Non-vacuum method for fabrication of a photovoltaic absorber layer
US8409906B2 (en) 2010-10-25 2013-04-02 Imra America, Inc. Non-vacuum method for fabrication of a photovoltaic absorber layer
TWI451580B (zh) * 2011-09-26 2014-09-01 Ind Tech Res Inst 薄膜太陽能電池之製法
FR2981952B1 (fr) * 2011-11-02 2015-01-02 Fabien Gaben Procede de realisation de couches minces denses par electrophorese
US10483532B2 (en) 2012-08-07 2019-11-19 Cornell University Binder-free and carbon-free nanoparticle containing component, methods and applications
FR3080957B1 (fr) 2018-05-07 2020-07-10 I-Ten Electrodes mesoporeuses pour dispositifs electrochimiques en couches minces
CN114672865B (zh) * 2022-04-26 2024-08-09 昆明理工大学 一种CNTs/Cu复合板材的制备方法

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US2851408A (en) * 1954-10-01 1958-09-09 Westinghouse Electric Corp Method of electrophoretic deposition of luminescent materials and product resulting therefrom
DE1171995B (de) * 1962-02-08 1964-06-11 Ibm Deutschland Verfahren zum Aufbringen von Fotoelementen auf nichtleitende Traeger
DE1496879A1 (de) * 1964-07-21 1969-08-14 Licentia Gmbh Verfahren zur elektrophoretischen Abscheidung von Nickelseleniden
US3879276A (en) * 1974-04-10 1975-04-22 Int Standard Electric Corp Electrophoretic deposition of selenium
US4011149A (en) * 1975-11-17 1977-03-08 Allied Chemical Corporation Photoelectrolysis of water by solar radiation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3328899A1 (de) * 1983-08-10 1985-02-28 Nukem Gmbh, 6450 Hanau Verfahren zum herstellen von frontseitigem elektrisch leitendem kontakt fuer photovoltaische zellen

Also Published As

Publication number Publication date
AU509321B2 (en) 1980-05-08
FR2352078A1 (fr) 1977-12-16
ES469346A1 (es) 1979-01-16
GB1573320A (en) 1980-08-20
AU2519777A (en) 1978-11-23
ES458847A1 (es) 1978-08-16
JPS52155994A (en) 1977-12-24
FR2352078B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-07-02
BE854762A (fr) 1977-11-17
NL7705384A (nl) 1977-11-21
CA1086682A (en) 1980-09-30
US4225408A (en) 1980-09-30
IT1143661B (it) 1986-10-22

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8131 Rejection