NL7705384A - Werkwijze voor de vervaardiging van een dunne, nagenoeg pinhole-vrije film. - Google Patents

Werkwijze voor de vervaardiging van een dunne, nagenoeg pinhole-vrije film.

Info

Publication number
NL7705384A
NL7705384A NL7705384A NL7705384A NL7705384A NL 7705384 A NL7705384 A NL 7705384A NL 7705384 A NL7705384 A NL 7705384A NL 7705384 A NL7705384 A NL 7705384A NL 7705384 A NL7705384 A NL 7705384A
Authority
NL
Netherlands
Prior art keywords
pinhole
manufacture
thin
free film
film
Prior art date
Application number
NL7705384A
Other languages
English (en)
Dutch (nl)
Original Assignee
Ici Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ici Ltd filed Critical Ici Ltd
Publication of NL7705384A publication Critical patent/NL7705384A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/02—Electrophoretic coating characterised by the process with inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7705384A 1976-05-17 1977-05-16 Werkwijze voor de vervaardiging van een dunne, nagenoeg pinhole-vrije film. NL7705384A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB20199/76A GB1573320A (en) 1976-05-17 1976-05-17 Electrophopretic deposition of inorganic films

Publications (1)

Publication Number Publication Date
NL7705384A true NL7705384A (nl) 1977-11-21

Family

ID=10142064

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7705384A NL7705384A (nl) 1976-05-17 1977-05-16 Werkwijze voor de vervaardiging van een dunne, nagenoeg pinhole-vrije film.

Country Status (11)

Country Link
US (1) US4225408A (xx)
JP (1) JPS52155994A (xx)
AU (1) AU509321B2 (xx)
BE (1) BE854762A (xx)
CA (1) CA1086682A (xx)
DE (1) DE2722045A1 (xx)
ES (2) ES458847A1 (xx)
FR (1) FR2352078A1 (xx)
GB (1) GB1573320A (xx)
IT (1) IT1143661B (xx)
NL (1) NL7705384A (xx)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002109B1 (en) * 1977-11-15 1981-12-02 Imperial Chemical Industries Plc A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films
JPS55500237A (xx) * 1978-04-27 1980-04-24
GB2117796B (en) * 1982-04-06 1985-06-19 Standard Telephones Cables Ltd Forming ceramic layers; dielectric structures
GB2117795A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Fabricating capacitors; forming ceramic films
US4584074A (en) * 1982-12-07 1986-04-22 International Standard Electric Corporation Capacitors
DE3328899C2 (de) * 1983-08-10 1985-07-11 Nukem Gmbh, 6450 Hanau Photovoltaische Zelle
US4695356A (en) * 1984-01-26 1987-09-22 Andromaque S.A. Electrochemical procedure for the direct forming of generally thin elements with various contours and surfaces of usual and technical ceramics or refractory material
US4952446A (en) * 1986-02-10 1990-08-28 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
GB8715082D0 (en) * 1987-06-26 1987-08-05 Prutec Ltd Solar cells
AU3136793A (en) * 1991-11-27 1993-06-28 Minnesota Mining And Manufacturing Company Electrophoretic deposition of transition metal dichalcogenides
US5498270A (en) * 1994-09-12 1996-03-12 Smith; Strom W. Sulfur trap
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6965196B2 (en) * 1997-08-04 2005-11-15 Lumimove, Inc. Electroluminescent sign
US6268014B1 (en) 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US20010042329A1 (en) * 2000-04-13 2001-11-22 Matthew Murasko Electroluminescent sign
SE519287C2 (sv) * 2000-08-31 2003-02-11 Ericsson Telefon Ab L M Inkapslat mönsterkort med sekventiellt uppbyggd ledningsmönster och tillverkningsförfarande
US20020159246A1 (en) * 2001-03-21 2002-10-31 Matthew Murasko Illuminated display system
US7048400B2 (en) * 2001-03-22 2006-05-23 Lumimove, Inc. Integrated illumination system
JP4354185B2 (ja) * 2001-03-22 2009-10-28 ルミムーブ， インコーポレイテッド 照明ディスプレイシステムおよびプロセス
WO2003003397A2 (en) * 2001-06-27 2003-01-09 Lumimove,Inc. Electroluminescent panel having controllable transparency
US20030159941A1 (en) * 2002-02-11 2003-08-28 Applied Materials, Inc. Additives for electroplating solution
CN1830753A (zh) * 2005-03-10 2006-09-13 清华大学 碳纳米管组装方法和碳纳米管器件
CN1840465B (zh) * 2005-03-30 2010-09-29 清华大学 一维纳米材料器件制造方法
CN100572260C (zh) * 2005-03-31 2009-12-23 清华大学 一维纳米材料器件的制造方法
US8748216B2 (en) 2010-10-25 2014-06-10 Imra America, Inc. Non-vacuum method for fabrication of a photovoltaic absorber layer
US8409906B2 (en) 2010-10-25 2013-04-02 Imra America, Inc. Non-vacuum method for fabrication of a photovoltaic absorber layer
TWI451580B (zh) * 2011-09-26 2014-09-01 Ind Tech Res Inst 薄膜太陽能電池之製法
FR2981952B1 (fr) * 2011-11-02 2015-01-02 Fabien Gaben Procede de realisation de couches minces denses par electrophorese
WO2014025743A1 (en) 2012-08-07 2014-02-13 Cornell University Binder free and carbon free nanoparticle containing component, method and applications
FR3080957B1 (fr) 2018-05-07 2020-07-10 I-Ten Electrodes mesoporeuses pour dispositifs electrochimiques en couches minces
CN114672865A (zh) * 2022-04-26 2022-06-28 昆明理工大学 一种CNTs/Cu复合板材的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2851408A (en) * 1954-10-01 1958-09-09 Westinghouse Electric Corp Method of electrophoretic deposition of luminescent materials and product resulting therefrom
DE1171995B (de) * 1962-02-08 1964-06-11 Ibm Deutschland Verfahren zum Aufbringen von Fotoelementen auf nichtleitende Traeger
DE1496879A1 (de) * 1964-07-21 1969-08-14 Licentia Gmbh Verfahren zur elektrophoretischen Abscheidung von Nickelseleniden
US3879276A (en) * 1974-04-10 1975-04-22 Int Standard Electric Corp Electrophoretic deposition of selenium
US4011149A (en) * 1975-11-17 1977-03-08 Allied Chemical Corporation Photoelectrolysis of water by solar radiation

Also Published As

Publication number Publication date
BE854762A (fr) 1977-11-17
DE2722045A1 (de) 1977-12-08
ES458847A1 (es) 1978-08-16
FR2352078A1 (fr) 1977-12-16
GB1573320A (en) 1980-08-20
FR2352078B1 (xx) 1982-07-02
JPS52155994A (en) 1977-12-24
ES469346A1 (es) 1979-01-16
AU509321B2 (en) 1980-05-08
US4225408A (en) 1980-09-30
IT1143661B (it) 1986-10-22
AU2519777A (en) 1978-11-23
CA1086682A (en) 1980-09-30

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed