FR2352078A1 - Procede de preparation de films sans piqure pour piles solaires - Google Patents

Procede de preparation de films sans piqure pour piles solaires

Info

Publication number
FR2352078A1
FR2352078A1 FR7714989A FR7714989A FR2352078A1 FR 2352078 A1 FR2352078 A1 FR 2352078A1 FR 7714989 A FR7714989 A FR 7714989A FR 7714989 A FR7714989 A FR 7714989A FR 2352078 A1 FR2352078 A1 FR 2352078A1
Authority
FR
France
Prior art keywords
solar batteries
free films
stitch
preparing
preparing stitch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7714989A
Other languages
English (en)
Other versions
FR2352078B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imperial Chemical Industries Ltd
Original Assignee
Imperial Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial Chemical Industries Ltd filed Critical Imperial Chemical Industries Ltd
Publication of FR2352078A1 publication Critical patent/FR2352078A1/fr
Application granted granted Critical
Publication of FR2352078B1 publication Critical patent/FR2352078B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/02—Electrophoretic coating characterised by the process with inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7714989A 1976-05-17 1977-05-16 Procede de preparation de films sans piqure pour piles solaires Granted FR2352078A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB20199/76A GB1573320A (en) 1976-05-17 1976-05-17 Electrophopretic deposition of inorganic films

Publications (2)

Publication Number Publication Date
FR2352078A1 true FR2352078A1 (fr) 1977-12-16
FR2352078B1 FR2352078B1 (fr) 1982-07-02

Family

ID=10142064

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7714989A Granted FR2352078A1 (fr) 1976-05-17 1977-05-16 Procede de preparation de films sans piqure pour piles solaires

Country Status (11)

Country Link
US (1) US4225408A (fr)
JP (1) JPS52155994A (fr)
AU (1) AU509321B2 (fr)
BE (1) BE854762A (fr)
CA (1) CA1086682A (fr)
DE (1) DE2722045A1 (fr)
ES (2) ES458847A1 (fr)
FR (1) FR2352078A1 (fr)
GB (1) GB1573320A (fr)
IT (1) IT1143661B (fr)
NL (1) NL7705384A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002109A1 (fr) * 1977-11-15 1979-05-30 Imperial Chemical Industries Plc Procédé pour la fabrication des couches minces et photoconductives et des cellules solaires en employant lesdites couches minces et photoconductives
WO1988010513A1 (fr) * 1987-06-26 1988-12-29 Prutec Limited Fabrication de cellules solaires

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55500237A (fr) * 1978-04-27 1980-04-24
GB2117796B (en) * 1982-04-06 1985-06-19 Standard Telephones Cables Ltd Forming ceramic layers; dielectric structures
GB2117795A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Fabricating capacitors; forming ceramic films
US4584074A (en) * 1982-12-07 1986-04-22 International Standard Electric Corporation Capacitors
DE3328899C2 (de) * 1983-08-10 1985-07-11 Nukem Gmbh, 6450 Hanau Photovoltaische Zelle
US4695356A (en) * 1984-01-26 1987-09-22 Andromaque S.A. Electrochemical procedure for the direct forming of generally thin elements with various contours and surfaces of usual and technical ceramics or refractory material
US4952446A (en) * 1986-02-10 1990-08-28 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
AU3136793A (en) * 1991-11-27 1993-06-28 Minnesota Mining And Manufacturing Company Electrophoretic deposition of transition metal dichalcogenides
US5498270A (en) * 1994-09-12 1996-03-12 Smith; Strom W. Sulfur trap
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6965196B2 (en) * 1997-08-04 2005-11-15 Lumimove, Inc. Electroluminescent sign
US6268014B1 (en) 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US20010042329A1 (en) * 2000-04-13 2001-11-22 Matthew Murasko Electroluminescent sign
SE519287C2 (sv) * 2000-08-31 2003-02-11 Ericsson Telefon Ab L M Inkapslat mönsterkort med sekventiellt uppbyggd ledningsmönster och tillverkningsförfarande
US20020159246A1 (en) * 2001-03-21 2002-10-31 Matthew Murasko Illuminated display system
US7048400B2 (en) * 2001-03-22 2006-05-23 Lumimove, Inc. Integrated illumination system
JP4354185B2 (ja) * 2001-03-22 2009-10-28 ルミムーブ， インコーポレイテッド 照明ディスプレイシステムおよびプロセス
WO2003003397A2 (fr) * 2001-06-27 2003-01-09 Lumimove,Inc. Panneau electroluminescent a transparence reglable
US20030159941A1 (en) * 2002-02-11 2003-08-28 Applied Materials, Inc. Additives for electroplating solution
CN1830753A (zh) * 2005-03-10 2006-09-13 清华大学 碳纳米管组装方法和碳纳米管器件
CN1840465B (zh) * 2005-03-30 2010-09-29 清华大学 一维纳米材料器件制造方法
CN100572260C (zh) * 2005-03-31 2009-12-23 清华大学 一维纳米材料器件的制造方法
US8748216B2 (en) 2010-10-25 2014-06-10 Imra America, Inc. Non-vacuum method for fabrication of a photovoltaic absorber layer
US8409906B2 (en) 2010-10-25 2013-04-02 Imra America, Inc. Non-vacuum method for fabrication of a photovoltaic absorber layer
TWI451580B (zh) * 2011-09-26 2014-09-01 Ind Tech Res Inst 薄膜太陽能電池之製法
FR2981952B1 (fr) * 2011-11-02 2015-01-02 Fabien Gaben Procede de realisation de couches minces denses par electrophorese
WO2014025743A1 (fr) 2012-08-07 2014-02-13 Cornell University Composant à base de nanoparticules sans liant et sans carbone, procédé et applications
FR3080957B1 (fr) 2018-05-07 2020-07-10 I-Ten Electrodes mesoporeuses pour dispositifs electrochimiques en couches minces
CN114672865A (zh) * 2022-04-26 2022-06-28 昆明理工大学 一种CNTs/Cu复合板材的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2851408A (en) * 1954-10-01 1958-09-09 Westinghouse Electric Corp Method of electrophoretic deposition of luminescent materials and product resulting therefrom
DE1171995B (de) * 1962-02-08 1964-06-11 Ibm Deutschland Verfahren zum Aufbringen von Fotoelementen auf nichtleitende Traeger
DE1496879A1 (de) * 1964-07-21 1969-08-14 Licentia Gmbh Verfahren zur elektrophoretischen Abscheidung von Nickelseleniden

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879276A (en) * 1974-04-10 1975-04-22 Int Standard Electric Corp Electrophoretic deposition of selenium
US4011149A (en) * 1975-11-17 1977-03-08 Allied Chemical Corporation Photoelectrolysis of water by solar radiation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2851408A (en) * 1954-10-01 1958-09-09 Westinghouse Electric Corp Method of electrophoretic deposition of luminescent materials and product resulting therefrom
DE1171995B (de) * 1962-02-08 1964-06-11 Ibm Deutschland Verfahren zum Aufbringen von Fotoelementen auf nichtleitende Traeger
DE1496879A1 (de) * 1964-07-21 1969-08-14 Licentia Gmbh Verfahren zur elektrophoretischen Abscheidung von Nickelseleniden

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002109A1 (fr) * 1977-11-15 1979-05-30 Imperial Chemical Industries Plc Procédé pour la fabrication des couches minces et photoconductives et des cellules solaires en employant lesdites couches minces et photoconductives
WO1988010513A1 (fr) * 1987-06-26 1988-12-29 Prutec Limited Fabrication de cellules solaires
EP0297799A1 (fr) * 1987-06-26 1989-01-04 Prutec Limited Procédé de fabrication de cellules solaires

Also Published As

Publication number Publication date
BE854762A (fr) 1977-11-17
DE2722045A1 (de) 1977-12-08
ES458847A1 (es) 1978-08-16
GB1573320A (en) 1980-08-20
FR2352078B1 (fr) 1982-07-02
JPS52155994A (en) 1977-12-24
ES469346A1 (es) 1979-01-16
AU509321B2 (en) 1980-05-08
US4225408A (en) 1980-09-30
IT1143661B (it) 1986-10-22
AU2519777A (en) 1978-11-23
NL7705384A (nl) 1977-11-21
CA1086682A (fr) 1980-09-30

Similar Documents

Publication Publication Date Title
FR2352078A1 (fr) Procede de preparation de films sans piqure pour piles solaires
BE851788A (fr) Procede de preparation de copolymeres solubles
FR2306003A1 (fr) Procede de preparation de structures a membranes ultraminces
BE858771A (fr) Procede de preparation de bitumes-polymeres
PT67304A (fr) Procede de preparation de complexes insectifuges
BE852710A (fr) Procede de preparation de composes azotes
FR2285721A2 (fr) Procede de realisation de piles solaires
BE855982A (fr) Procede de preparation de polythiosulfones aromatiques thermostables
BE853327A (fr) Procede de preparation de maleimides
BE873761A (fr) Procede de preparation de pellicules de stannate de cadmium
BE855983A (fr) Procede de preparation de polythiosulfones aromatiques thermostables
BE853302A (fr) Procede de preparation d'alkylthiomethylphenols
LU78116A1 (fr) Procede de preparation de nouvelles 11-deoxy-11-oxaprostaglandines
BE856679A (fr) Procede de preparation de benzaldehydesorthosubstitues
BE852850A (fr) Procede de preparation de la 5-acetoacetyl-amino-benzimidazolone
BE857758A (fr) Procede de preparation de 5-amino-1,2,3-thiadiazole
BE874931A (fr) Procede de preparation de trifluoromethylphenols
BE861064A (fr) Procede de preparation de siph2nylamine styrenee
RO72474A (fr) Procede pour la preparation des indoldihydroindol-3-carboxamides dimeres
BE850304A (fr) Procede de preparation de composes peptidiques
BE847738A (fr) Nouveau procede de preparation d'imidazoles substitues,
BE857895A (fr) Nouveau procede de preparation de peptides
BE877356R (fr) Procede de preparation de composes 1alpha-hydroxyles
BE874713A (fr) Procede de preparation de p-amino-diphenylamine
BE861501A (fr) Procede de preparation de la 17alpha-hydroxy-21-acetoxy-progesterone

Legal Events

Date Code Title Description
ST Notification of lapse