DE2721744A1 - Heterojonctions-transistor - Google Patents

Heterojonctions-transistor

Info

Publication number
DE2721744A1
DE2721744A1 DE19772721744 DE2721744A DE2721744A1 DE 2721744 A1 DE2721744 A1 DE 2721744A1 DE 19772721744 DE19772721744 DE 19772721744 DE 2721744 A DE2721744 A DE 2721744A DE 2721744 A1 DE2721744 A1 DE 2721744A1
Authority
DE
Germany
Prior art keywords
layer
emitter
base
zone
base layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19772721744
Other languages
German (de)
English (en)
Inventor
Jacques Benoit
Yves Louis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Publication of DE2721744A1 publication Critical patent/DE2721744A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H10W74/137—

Landscapes

  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
DE19772721744 1976-05-20 1977-05-13 Heterojonctions-transistor Ceased DE2721744A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7615223A FR2352404A1 (fr) 1976-05-20 1976-05-20 Transistor a heterojonction

Publications (1)

Publication Number Publication Date
DE2721744A1 true DE2721744A1 (de) 1977-12-08

Family

ID=9173412

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772721744 Ceased DE2721744A1 (de) 1976-05-20 1977-05-13 Heterojonctions-transistor

Country Status (3)

Country Link
DE (1) DE2721744A1 (enExample)
FR (1) FR2352404A1 (enExample)
GB (1) GB1524339A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455440A (en) * 1992-12-09 1995-10-03 Texas Instruments Incorporated Method to reduce emitter-base leakage current in bipolar transistors

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ
FR2490014A1 (fr) * 1980-09-11 1982-03-12 Scavennec Andre Phototransistor a heterojonction emetteur-base a couche d'emetteur localement de type inverse
NL8501769A (nl) * 1984-10-02 1986-05-01 Imec Interuniversitair Micro E Bipolaire heterojunctie-transistor en werkwijze voor de vervaardiging daarvan.
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device
EP0501279A1 (en) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US5446294A (en) * 1991-07-31 1995-08-29 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2354523A1 (de) * 1972-11-06 1974-05-22 Hughes Aircraft Co Verfahren zur erzeugung von elektrisch isolierenden sperrbereichen in halbleitermaterial

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2354523A1 (de) * 1972-11-06 1974-05-22 Hughes Aircraft Co Verfahren zur erzeugung von elektrisch isolierenden sperrbereichen in halbleitermaterial

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Dumke, W.P., et al: GaAs-GaAlAs Heterojunction Transistor for High Frequency Operation. In: Solid-State Electronics, 1972, Vol. 15, Nr. 12, S. 1339 *
Hedges, D.A.: Semiconductor Memories, New York, 1972 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455440A (en) * 1992-12-09 1995-10-03 Texas Instruments Incorporated Method to reduce emitter-base leakage current in bipolar transistors

Also Published As

Publication number Publication date
GB1524339A (en) 1978-09-13
FR2352404A1 (fr) 1977-12-16
FR2352404B1 (enExample) 1978-11-03

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection