GB1524339A - Heterojunction transistor - Google Patents

Heterojunction transistor

Info

Publication number
GB1524339A
GB1524339A GB20179/77A GB2017977A GB1524339A GB 1524339 A GB1524339 A GB 1524339A GB 20179/77 A GB20179/77 A GB 20179/77A GB 2017977 A GB2017977 A GB 2017977A GB 1524339 A GB1524339 A GB 1524339A
Authority
GB
United Kingdom
Prior art keywords
transistor
base
defects
region
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20179/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Publication of GB1524339A publication Critical patent/GB1524339A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H10W74/137—

Landscapes

  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
GB20179/77A 1976-05-20 1977-05-13 Heterojunction transistor Expired GB1524339A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7615223A FR2352404A1 (fr) 1976-05-20 1976-05-20 Transistor a heterojonction

Publications (1)

Publication Number Publication Date
GB1524339A true GB1524339A (en) 1978-09-13

Family

ID=9173412

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20179/77A Expired GB1524339A (en) 1976-05-20 1977-05-13 Heterojunction transistor

Country Status (3)

Country Link
DE (1) DE2721744A1 (enExample)
FR (1) FR2352404A1 (enExample)
GB (1) GB1524339A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ
FR2490014A1 (fr) * 1980-09-11 1982-03-12 Scavennec Andre Phototransistor a heterojonction emetteur-base a couche d'emetteur localement de type inverse
NL8501769A (nl) * 1984-10-02 1986-05-01 Imec Interuniversitair Micro E Bipolaire heterojunctie-transistor en werkwijze voor de vervaardiging daarvan.
EP0501279A1 (en) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US5446294A (en) * 1991-07-31 1995-08-29 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US5455440A (en) * 1992-12-09 1995-10-03 Texas Instruments Incorporated Method to reduce emitter-base leakage current in bipolar transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897273A (en) * 1972-11-06 1975-07-29 Hughes Aircraft Co Process for forming electrically isolating high resistivity regions in GaAs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device

Also Published As

Publication number Publication date
FR2352404A1 (fr) 1977-12-16
DE2721744A1 (de) 1977-12-08
FR2352404B1 (enExample) 1978-11-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19920513