DE2721114A1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE2721114A1
DE2721114A1 DE19772721114 DE2721114A DE2721114A1 DE 2721114 A1 DE2721114 A1 DE 2721114A1 DE 19772721114 DE19772721114 DE 19772721114 DE 2721114 A DE2721114 A DE 2721114A DE 2721114 A1 DE2721114 A1 DE 2721114A1
Authority
DE
Germany
Prior art keywords
zone
semiconductor component
metal layer
gallium arsenide
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19772721114
Other languages
German (de)
English (en)
Inventor
Jean Claude Carballes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE2721114A1 publication Critical patent/DE2721114A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE19772721114 1976-05-11 1977-05-11 Halbleiterbauelement Withdrawn DE2721114A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7614163A FR2351504A1 (fr) 1976-05-11 1976-05-11 Nouveau dispositif de prise de contact sur un ensemble semi-conducteur

Publications (1)

Publication Number Publication Date
DE2721114A1 true DE2721114A1 (de) 1977-11-24

Family

ID=9172979

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772721114 Withdrawn DE2721114A1 (de) 1976-05-11 1977-05-11 Halbleiterbauelement

Country Status (5)

Country Link
JP (1) JPS52137280A (enExample)
CA (1) CA1089571A (enExample)
DE (1) DE2721114A1 (enExample)
FR (1) FR2351504A1 (enExample)
GB (1) GB1545425A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4182995A (en) * 1978-03-16 1980-01-08 Rca Corporation Laser diode with thermal conducting, current confining film
DE2856507A1 (de) * 1978-12-28 1980-07-17 Amann Markus Christian Dipl In Halbleiter-laserdiode

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591890A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Photodiode
JPS55153385A (en) * 1979-05-18 1980-11-29 Nippon Telegr & Teleph Corp <Ntt> Current squeezing type semiconductor device
JPS5621387A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Semiconductor luminescent device
DE3332398A1 (de) * 1983-09-08 1985-03-28 Standard Elektrik Lorenz Ag, 7000 Stuttgart Multimodenlaser
CN116978999B (zh) * 2023-09-22 2024-01-02 南昌凯捷半导体科技有限公司 一种电流限域Micro-LED芯片及其制作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4182995A (en) * 1978-03-16 1980-01-08 Rca Corporation Laser diode with thermal conducting, current confining film
DE2856507A1 (de) * 1978-12-28 1980-07-17 Amann Markus Christian Dipl In Halbleiter-laserdiode

Also Published As

Publication number Publication date
GB1545425A (en) 1979-05-10
JPS52137280A (en) 1977-11-16
FR2351504A1 (fr) 1977-12-09
CA1089571A (en) 1980-11-11
FR2351504B1 (enExample) 1980-04-18

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination