FR2351504B1 - - Google Patents
Info
- Publication number
- FR2351504B1 FR2351504B1 FR7614163A FR7614163A FR2351504B1 FR 2351504 B1 FR2351504 B1 FR 2351504B1 FR 7614163 A FR7614163 A FR 7614163A FR 7614163 A FR7614163 A FR 7614163A FR 2351504 B1 FR2351504 B1 FR 2351504B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7614163A FR2351504A1 (fr) | 1976-05-11 | 1976-05-11 | Nouveau dispositif de prise de contact sur un ensemble semi-conducteur |
| GB19413/77A GB1545425A (en) | 1976-05-11 | 1977-05-09 | Contacting structure on a semiconductor arrangement |
| CA278,081A CA1089571A (en) | 1976-05-11 | 1977-05-10 | Contacting structure on a semiconductor arrangement |
| DE19772721114 DE2721114A1 (de) | 1976-05-11 | 1977-05-11 | Halbleiterbauelement |
| JP5419777A JPS52137280A (en) | 1976-05-11 | 1977-05-11 | Contacting structure on semiconductor array |
| US06/020,501 US4206468A (en) | 1976-05-11 | 1979-03-14 | Contacting structure on a semiconductor arrangement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7614163A FR2351504A1 (fr) | 1976-05-11 | 1976-05-11 | Nouveau dispositif de prise de contact sur un ensemble semi-conducteur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2351504A1 FR2351504A1 (fr) | 1977-12-09 |
| FR2351504B1 true FR2351504B1 (enExample) | 1980-04-18 |
Family
ID=9172979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7614163A Granted FR2351504A1 (fr) | 1976-05-11 | 1976-05-11 | Nouveau dispositif de prise de contact sur un ensemble semi-conducteur |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS52137280A (enExample) |
| CA (1) | CA1089571A (enExample) |
| DE (1) | DE2721114A1 (enExample) |
| FR (1) | FR2351504A1 (enExample) |
| GB (1) | GB1545425A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4182995A (en) * | 1978-03-16 | 1980-01-08 | Rca Corporation | Laser diode with thermal conducting, current confining film |
| DE2856507A1 (de) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | Halbleiter-laserdiode |
| JPS5591890A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Photodiode |
| JPS55153385A (en) * | 1979-05-18 | 1980-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Current squeezing type semiconductor device |
| JPS5621387A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Semiconductor luminescent device |
| DE3332398A1 (de) * | 1983-09-08 | 1985-03-28 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Multimodenlaser |
| CN116978999B (zh) * | 2023-09-22 | 2024-01-02 | 南昌凯捷半导体科技有限公司 | 一种电流限域Micro-LED芯片及其制作方法 |
-
1976
- 1976-05-11 FR FR7614163A patent/FR2351504A1/fr active Granted
-
1977
- 1977-05-09 GB GB19413/77A patent/GB1545425A/en not_active Expired
- 1977-05-10 CA CA278,081A patent/CA1089571A/en not_active Expired
- 1977-05-11 DE DE19772721114 patent/DE2721114A1/de not_active Withdrawn
- 1977-05-11 JP JP5419777A patent/JPS52137280A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1545425A (en) | 1979-05-10 |
| JPS52137280A (en) | 1977-11-16 |
| FR2351504A1 (fr) | 1977-12-09 |
| DE2721114A1 (de) | 1977-11-24 |
| CA1089571A (en) | 1980-11-11 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |