DE2716419A1 - Verfahren zum passivieren von leistungs-halbleiterbauelementen - Google Patents

Verfahren zum passivieren von leistungs-halbleiterbauelementen

Info

Publication number
DE2716419A1
DE2716419A1 DE19772716419 DE2716419A DE2716419A1 DE 2716419 A1 DE2716419 A1 DE 2716419A1 DE 19772716419 DE19772716419 DE 19772716419 DE 2716419 A DE2716419 A DE 2716419A DE 2716419 A1 DE2716419 A1 DE 2716419A1
Authority
DE
Germany
Prior art keywords
layer
plate
grooves
passivating
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19772716419
Other languages
German (de)
English (en)
Inventor
Luciano Gandolfi
Rudolf Rocak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of DE2716419A1 publication Critical patent/DE2716419A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
DE19772716419 1976-04-14 1977-04-14 Verfahren zum passivieren von leistungs-halbleiterbauelementen Ceased DE2716419A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22280/76A IT1059086B (it) 1976-04-14 1976-04-14 Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa

Publications (1)

Publication Number Publication Date
DE2716419A1 true DE2716419A1 (de) 1977-11-03

Family

ID=11194095

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772716419 Ceased DE2716419A1 (de) 1976-04-14 1977-04-14 Verfahren zum passivieren von leistungs-halbleiterbauelementen

Country Status (7)

Country Link
US (1) US4126931A (enExample)
JP (1) JPS6026296B2 (enExample)
BR (1) BR7702277A (enExample)
DE (1) DE2716419A1 (enExample)
FR (1) FR2348573A1 (enExample)
GB (1) GB1569931A (enExample)
IT (1) IT1059086B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904801A1 (de) * 1978-02-09 1979-08-16 Hitachi Chemical Co Ltd Verfahren zur herstellung eines zwischenproduktes vom polamidsaeuretyp fuer die herstellung von halbleitern
FR2537778A1 (fr) * 1982-12-08 1984-06-15 Int Rectifier Corp Procede de metallisation d'une plaquette de silicium monocristallin
US6025268A (en) * 1996-06-26 2000-02-15 Advanced Micro Devices, Inc. Method of etching conductive lines through an etch resistant photoresist mask

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0716077B2 (ja) * 1985-10-11 1995-02-22 三菱電機株式会社 半導体レーザ装置の製造方法
TW554639B (en) * 2002-10-04 2003-09-21 Au Optronics Corp Method for fabricating an OLED device and the solid passivation
EP2683633A4 (en) * 2011-03-08 2015-06-17 Lorillard Tobacco Co PHASE TRANSFER COMPOSITIONS FOR REDUCED INFLAMMATORY INFLUENCE OF SMOKING ITEMS
WO2017076659A1 (en) 2015-11-05 2017-05-11 Abb Schweiz Ag Power semiconductor device and method for producing a power semiconductor device
JP6903375B2 (ja) * 2017-04-19 2021-07-14 株式会社ディスコ デバイスチップの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539007A1 (de) * 1965-02-25 1969-08-14 Union Carbide Corp Transistor
GB1261378A (en) * 1968-07-08 1972-01-26 Internat Rectifier Company Gre Improvements relating to the encapsulation of semiconductor devices and other electrical components
US3756872A (en) * 1968-10-28 1973-09-04 Lucas Industries Ltd Method of making non-planar semiconductor devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432919A (en) * 1966-10-31 1969-03-18 Raytheon Co Method of making semiconductor diodes
US3895429A (en) * 1974-05-09 1975-07-22 Rca Corp Method of making a semiconductor device
US4037306A (en) * 1975-10-02 1977-07-26 Motorola, Inc. Integrated circuit and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539007A1 (de) * 1965-02-25 1969-08-14 Union Carbide Corp Transistor
GB1261378A (en) * 1968-07-08 1972-01-26 Internat Rectifier Company Gre Improvements relating to the encapsulation of semiconductor devices and other electrical components
US3756872A (en) * 1968-10-28 1973-09-04 Lucas Industries Ltd Method of making non-planar semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904801A1 (de) * 1978-02-09 1979-08-16 Hitachi Chemical Co Ltd Verfahren zur herstellung eines zwischenproduktes vom polamidsaeuretyp fuer die herstellung von halbleitern
FR2537778A1 (fr) * 1982-12-08 1984-06-15 Int Rectifier Corp Procede de metallisation d'une plaquette de silicium monocristallin
US6025268A (en) * 1996-06-26 2000-02-15 Advanced Micro Devices, Inc. Method of etching conductive lines through an etch resistant photoresist mask

Also Published As

Publication number Publication date
JPS6026296B2 (ja) 1985-06-22
JPS52144968A (en) 1977-12-02
IT1059086B (it) 1982-05-31
FR2348573B1 (enExample) 1982-08-13
US4126931A (en) 1978-11-28
FR2348573A1 (fr) 1977-11-10
BR7702277A (pt) 1977-12-20
GB1569931A (en) 1980-06-25

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: KADOR, U., DIPL.-CHEM. DR.RER.NAT. KLUNKER, H., DI

8110 Request for examination paragraph 44
8128 New person/name/address of the agent

Representative=s name: KLUNKER, H., DIPL.-ING. DR.RER.NAT. SCHMITT-NILSON

8131 Rejection