GB1569931A - Manufacture of semiconductor devices - Google Patents

Manufacture of semiconductor devices Download PDF

Info

Publication number
GB1569931A
GB1569931A GB15573/77A GB1557377A GB1569931A GB 1569931 A GB1569931 A GB 1569931A GB 15573/77 A GB15573/77 A GB 15573/77A GB 1557377 A GB1557377 A GB 1557377A GB 1569931 A GB1569931 A GB 1569931A
Authority
GB
United Kingdom
Prior art keywords
wafer
grooves
layer
chips
passivating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15573/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of GB1569931A publication Critical patent/GB1569931A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
GB15573/77A 1976-04-14 1977-04-14 Manufacture of semiconductor devices Expired GB1569931A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22280/76A IT1059086B (it) 1976-04-14 1976-04-14 Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa

Publications (1)

Publication Number Publication Date
GB1569931A true GB1569931A (en) 1980-06-25

Family

ID=11194095

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15573/77A Expired GB1569931A (en) 1976-04-14 1977-04-14 Manufacture of semiconductor devices

Country Status (7)

Country Link
US (1) US4126931A (enExample)
JP (1) JPS6026296B2 (enExample)
BR (1) BR7702277A (enExample)
DE (1) DE2716419A1 (enExample)
FR (1) FR2348573A1 (enExample)
GB (1) GB1569931A (enExample)
IT (1) IT1059086B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735667A (zh) * 2017-04-19 2018-11-02 株式会社迪思科 器件芯片的制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106599A (en) * 1978-02-09 1979-08-21 Hitachi Chem Co Ltd Preparation of polyamide intermediate for semiconductor processing
SE8306663L (sv) * 1982-12-08 1984-06-09 Int Rectifier Corp Forfarande for framstellning av halvledaranordning
JPH0716077B2 (ja) * 1985-10-11 1995-02-22 三菱電機株式会社 半導体レーザ装置の製造方法
US6025268A (en) * 1996-06-26 2000-02-15 Advanced Micro Devices, Inc. Method of etching conductive lines through an etch resistant photoresist mask
TW554639B (en) * 2002-10-04 2003-09-21 Au Optronics Corp Method for fabricating an OLED device and the solid passivation
EP2683633A4 (en) * 2011-03-08 2015-06-17 Lorillard Tobacco Co PHASE TRANSFER COMPOSITIONS FOR REDUCED INFLAMMATORY INFLUENCE OF SMOKING ITEMS
WO2017076659A1 (en) 2015-11-05 2017-05-11 Abb Schweiz Ag Power semiconductor device and method for producing a power semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3375419A (en) * 1965-02-25 1968-03-26 Union Carbide Corp Field effect transistor with poly-p-xylylene insulated gate structure and method
US3432919A (en) * 1966-10-31 1969-03-18 Raytheon Co Method of making semiconductor diodes
GB1261378A (en) * 1968-07-08 1972-01-26 Internat Rectifier Company Gre Improvements relating to the encapsulation of semiconductor devices and other electrical components
GB1285708A (en) * 1968-10-28 1972-08-16 Lucas Industries Ltd Semi-conductor devices
US3895429A (en) * 1974-05-09 1975-07-22 Rca Corp Method of making a semiconductor device
US4037306A (en) * 1975-10-02 1977-07-26 Motorola, Inc. Integrated circuit and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735667A (zh) * 2017-04-19 2018-11-02 株式会社迪思科 器件芯片的制造方法
CN108735667B (zh) * 2017-04-19 2023-12-15 株式会社迪思科 器件芯片的制造方法

Also Published As

Publication number Publication date
JPS6026296B2 (ja) 1985-06-22
DE2716419A1 (de) 1977-11-03
JPS52144968A (en) 1977-12-02
IT1059086B (it) 1982-05-31
FR2348573B1 (enExample) 1982-08-13
US4126931A (en) 1978-11-28
FR2348573A1 (fr) 1977-11-10
BR7702277A (pt) 1977-12-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19970413