DE2711714B2 - Vakuumaufdampfvorrichtung zur Herstellung von Schichten aus mehreren Komponenten - Google Patents
Vakuumaufdampfvorrichtung zur Herstellung von Schichten aus mehreren KomponentenInfo
- Publication number
- DE2711714B2 DE2711714B2 DE2711714A DE2711714A DE2711714B2 DE 2711714 B2 DE2711714 B2 DE 2711714B2 DE 2711714 A DE2711714 A DE 2711714A DE 2711714 A DE2711714 A DE 2711714A DE 2711714 B2 DE2711714 B2 DE 2711714B2
- Authority
- DE
- Germany
- Prior art keywords
- evaporation
- substrates
- boats
- turntable
- steam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000007738 vacuum evaporation Methods 0.000 title description 4
- 238000001704 evaporation Methods 0.000 claims description 65
- 230000008020 evaporation Effects 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000126 substance Substances 0.000 claims description 17
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims 4
- 238000013016 damping Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- 239000010408 film Substances 0.000 description 16
- 239000010409 thin film Substances 0.000 description 7
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2923476A JPS52113379A (en) | 1976-03-19 | 1976-03-19 | Vacuum evaporation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2711714A1 DE2711714A1 (de) | 1977-09-22 |
| DE2711714B2 true DE2711714B2 (de) | 1980-01-31 |
Family
ID=12270529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2711714A Ceased DE2711714B2 (de) | 1976-03-19 | 1977-03-17 | Vakuumaufdampfvorrichtung zur Herstellung von Schichten aus mehreren Komponenten |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4121537A (enExample) |
| JP (1) | JPS52113379A (enExample) |
| DE (1) | DE2711714B2 (enExample) |
| FR (1) | FR2344643A1 (enExample) |
| GB (1) | GB1532183A (enExample) |
| NL (1) | NL173542C (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5399762A (en) * | 1977-02-12 | 1978-08-31 | Futaba Denshi Kogyo Kk | Device for producing compound semiconductor film |
| US4207836A (en) * | 1977-07-01 | 1980-06-17 | Hitachi, Ltd. | Vacuum vapor-deposition apparatus |
| DE3028123A1 (de) * | 1980-07-24 | 1982-02-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zur herstellung von schichtkondensatoren |
| US4348886A (en) * | 1980-11-19 | 1982-09-14 | Rca Corporation | Monitor for oxygen concentration in aluminum-based films |
| US4681773A (en) * | 1981-03-27 | 1987-07-21 | American Telephone And Telegraph Company At&T Bell Laboratories | Apparatus for simultaneous molecular beam deposition on a plurality of substrates |
| US4386578A (en) * | 1981-05-26 | 1983-06-07 | The Boeing Company | High velocity metallic mass increment vacuum deposit gun |
| JPS58217673A (ja) * | 1982-06-11 | 1983-12-17 | Anelva Corp | 膜厚制御方法 |
| US4459823A (en) * | 1983-03-30 | 1984-07-17 | Sperry Corporation | Rotating liquid nitrogen cooled substrate holder |
| DE3315666A1 (de) * | 1983-04-29 | 1984-10-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur messung des auftrages und abtrages von duennen schichten |
| US5097800A (en) * | 1983-12-19 | 1992-03-24 | Spectrum Control, Inc. | High speed apparatus for forming capacitors |
| US5125138A (en) * | 1983-12-19 | 1992-06-30 | Spectrum Control, Inc. | Miniaturized monolithic multi-layer capacitor and apparatus and method for making same |
| US5032461A (en) * | 1983-12-19 | 1991-07-16 | Spectrum Control, Inc. | Method of making a multi-layered article |
| US5018048A (en) * | 1983-12-19 | 1991-05-21 | Spectrum Control, Inc. | Miniaturized monolithic multi-layer capacitor and apparatus and method for making |
| US4842893A (en) * | 1983-12-19 | 1989-06-27 | Spectrum Control, Inc. | High speed process for coating substrates |
| JPS6261315A (ja) * | 1985-09-11 | 1987-03-18 | Sharp Corp | 分子線エピタキシ−装置 |
| US4954371A (en) * | 1986-06-23 | 1990-09-04 | Spectrum Control, Inc. | Flash evaporation of monomer fluids |
| US4858556A (en) * | 1986-09-15 | 1989-08-22 | Siebert Jerome F | Method and apparatus for physical vapor deposition of thin films |
| US5025664A (en) * | 1989-11-02 | 1991-06-25 | Leybold Inficon, Inc. | Multiple crystal head for deposition thickness monitor |
| JP3292925B2 (ja) * | 1991-03-01 | 2002-06-17 | 株式会社昭和真空 | 連続式スパッタ装置に於ける膜厚確認方法 |
| SE468372B (sv) * | 1991-04-24 | 1992-12-21 | Stiftelsen Im Inst Foer Mikroe | Foerfarande foer tillverkning av tunnfilmssolceller varvid deponering av skikt paa substrat sker i roterbar (cylindrisk) baeranordning |
| US5412180A (en) * | 1993-12-02 | 1995-05-02 | The Regents Of The University Of California | Ultra high vacuum heating and rotating specimen stage |
| FR2719900B1 (fr) * | 1994-05-11 | 1996-09-20 | Essilor Int | Procédé et dispositif pour la mesure in situ des contraintes se développant au sein d'une couche mince lors de son dépôt sur un substrat. |
| US5948983A (en) * | 1997-07-25 | 1999-09-07 | Leybold Inficon, Inc. | Wall deposition monitoring system |
| US6830663B2 (en) * | 1999-01-26 | 2004-12-14 | Symyx Technologies, Inc. | Method for creating radial profiles on a substrate |
| US6364956B1 (en) | 1999-01-26 | 2002-04-02 | Symyx Technologies, Inc. | Programmable flux gradient apparatus for co-deposition of materials onto a substrate |
| US6090444A (en) * | 1999-02-08 | 2000-07-18 | Saunders & Associates, Inc. | Base plater or vacuum deposition apparatus with individually and selectively controlled work holders and capacitively coupled crystal monitor |
| CA2425838A1 (en) * | 2000-10-17 | 2002-04-25 | Ronald J. Mosso | Coating formation by reactive deposition |
| US7828929B2 (en) * | 2004-12-30 | 2010-11-09 | Research Electro-Optics, Inc. | Methods and devices for monitoring and controlling thin film processing |
| EP2113584A1 (en) * | 2008-04-28 | 2009-11-04 | LightLab Sweden AB | Evaporation system |
| WO2011093334A1 (ja) * | 2010-01-26 | 2011-08-04 | キヤノンアネルバ株式会社 | 成膜方法、成膜装置、および該成膜装置の制御装置 |
| EP2418545B1 (en) | 2010-08-12 | 2018-10-10 | Applied Materials, Inc. | Mask handling module |
| KR102002849B1 (ko) * | 2012-09-17 | 2019-07-24 | 삼성디스플레이 주식회사 | 증착 장치 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1073293A (en) * | 1963-10-16 | 1967-06-21 | Edwards High Vacuum Int Ltd | Apparatus for controlling vapour deposition in a vacuum |
| GB1003378A (en) * | 1964-03-23 | 1965-09-02 | Standard Telephones Cables Ltd | Monitoring the thickness of films being vacuum deposited |
| DE2122997A1 (de) * | 1970-05-06 | 1971-11-25 | Metal Lux Spa | Gerät zum Färben von Gegenständen wie beispielsweise Brillengläsern |
| US3732846A (en) * | 1972-01-07 | 1973-05-15 | Us Army | Crystal plating monitoring system |
| JPS5331829B2 (enExample) * | 1972-04-14 | 1978-09-05 | ||
| JPS495834A (enExample) * | 1972-04-15 | 1974-01-19 | ||
| US4059067A (en) * | 1974-10-09 | 1977-11-22 | Balzers Patent-Und Beteiligungs-Aktiengesellschaft | Apparatus for determining the rate of flow of particles in a vacuum deposition device |
| US3939798A (en) * | 1974-12-19 | 1976-02-24 | Texas Instruments Incorporated | Optical thin film coater |
| US4024291A (en) * | 1975-06-17 | 1977-05-17 | Leybold-Heraeus Gmbh & Co. Kg | Control of vapor deposition |
-
1976
- 1976-03-19 JP JP2923476A patent/JPS52113379A/ja active Granted
-
1977
- 1977-03-16 NL NLAANVRAGE7702869,A patent/NL173542C/xx not_active IP Right Cessation
- 1977-03-17 GB GB11476/77A patent/GB1532183A/en not_active Expired
- 1977-03-17 DE DE2711714A patent/DE2711714B2/de not_active Ceased
- 1977-03-18 FR FR7708132A patent/FR2344643A1/fr active Granted
- 1977-03-21 US US05/779,795 patent/US4121537A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB1532183A (en) | 1978-11-15 |
| NL173542B (nl) | 1983-09-01 |
| FR2344643A1 (fr) | 1977-10-14 |
| US4121537A (en) | 1978-10-24 |
| NL7702869A (nl) | 1977-09-21 |
| DE2711714A1 (de) | 1977-09-22 |
| FR2344643B1 (enExample) | 1980-11-21 |
| NL173542C (nl) | 1984-02-01 |
| JPS52113379A (en) | 1977-09-22 |
| JPS5527624B2 (enExample) | 1980-07-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8228 | New agent |
Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN |
|
| 8235 | Patent refused |