DE2649134A1 - Verfahren zur ionenimplantation in halbleitersubstrate - Google Patents

Verfahren zur ionenimplantation in halbleitersubstrate

Info

Publication number
DE2649134A1
DE2649134A1 DE19762649134 DE2649134A DE2649134A1 DE 2649134 A1 DE2649134 A1 DE 2649134A1 DE 19762649134 DE19762649134 DE 19762649134 DE 2649134 A DE2649134 A DE 2649134A DE 2649134 A1 DE2649134 A1 DE 2649134A1
Authority
DE
Germany
Prior art keywords
angle
implantation
deviates
layer
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19762649134
Other languages
German (de)
English (en)
Inventor
Yasuo Hayashi
Hideo Kubota
Nobumichi Okazaki
Seiichi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2649134A1 publication Critical patent/DE2649134A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Recrystallisation Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19762649134 1975-10-28 1976-10-28 Verfahren zur ionenimplantation in halbleitersubstrate Ceased DE2649134A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129646A JPS5834931B2 (ja) 1975-10-28 1975-10-28 ハンドウタイヘノフジユンブツドウニユウホウ

Publications (1)

Publication Number Publication Date
DE2649134A1 true DE2649134A1 (de) 1977-05-12

Family

ID=15014653

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762649134 Ceased DE2649134A1 (de) 1975-10-28 1976-10-28 Verfahren zur ionenimplantation in halbleitersubstrate

Country Status (4)

Country Link
JP (1) JPS5834931B2 (https=)
DE (1) DE2649134A1 (https=)
FR (1) FR2330143A1 (https=)
NL (1) NL7611983A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2351082A1 (fr) * 1976-05-11 1977-12-09 Rhone Poulenc Ind Procede de fabrication d'acide terephtalique a partir de terephtalate dipotassique, realisation en deux etages
DE2833319C2 (de) * 1978-07-29 1982-10-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Kapazitätsdiode
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
JPS61178268U (https=) * 1985-04-24 1986-11-07
JPH0831428B2 (ja) * 1985-06-20 1996-03-27 住友電気工業株式会社 結晶へのイオン注入方法
US4790890A (en) * 1987-12-03 1988-12-13 Ireco Incorporated Packaged emulsion explosives and methods of manufacture thereof
JPH04343479A (ja) * 1991-05-21 1992-11-30 Nec Yamagata Ltd 可変容量ダイオード
EP1139434A3 (en) 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Electronic Engineering, Vol. 42, H. 507, Mai 1970, S. 74-76 *
IEEE Transactions on Electron Devices, Bd. ED-19, Nr. 2, Februar 1972, S. 267-273 *
J. Appl. Phys., Vol. 44, Nr. 7, Juli 1973, S. 2951-2963 *

Also Published As

Publication number Publication date
FR2330143B3 (https=) 1979-07-13
JPS5253658A (en) 1977-04-30
JPS5834931B2 (ja) 1983-07-29
FR2330143A1 (fr) 1977-05-27
NL7611983A (nl) 1977-05-02

Similar Documents

Publication Publication Date Title
EP0010596B1 (de) Verfahren zur Ausbildung von Maskenöffnungen bei der Herstellung von Halbleiteranordnungen
DE1589810C3 (de) Passiviertes Halbleiterbauelement und Verfahren zu seiner Herstellung
DE4226888C2 (de) Diamant-Feldeffekt-Transistor und Verfahren zu dessen Herstellung
DE2160427C3 (https=)
DE2753613B2 (de) Isolierschicht-Feldeffekttransistor
DE3541587A1 (de) Verfahren zur herstellung eines duennen halbleiterfilms
DE2541548A1 (de) Isolierschicht-feldeffekttransistor und verfahren zu dessen herstellung
DE2414033B2 (de) Verfahren zur herstellung von halbleitervorrichtungen mit selektiv auf einer oberflaeche eines halbleitersubstrats angeordneten schichten aus einem oxid des substratmaterials
DE2513459A1 (de) Halbleiteranordnung und verfahren zu ihrer herstellung
DE2429705B2 (de) Schottky-Diode und Verfahren zu ihrer Herstellung
DE2019655C2 (de) Verfahren zur Eindiffundierung eines den Leitungstyp verändernden Aktivators in einen Oberflächenbereich eines Halbleiterkörpers
DE2262943A1 (de) Verfahren zur verhinderung einer unerwuenschten inversion
DE2926334C2 (https=)
WO2001024276A1 (de) Ladungskompensationshalbleiteranordnung
DE1764757A1 (de) Halbleiterbauelement mit isolierter Steuerelektrode
DE2649134A1 (de) Verfahren zur ionenimplantation in halbleitersubstrate
DE19618866B4 (de) Verfahren zur Herstellung einer Bauelementisolation in einem Halbleiterbauelement
DE2705468A1 (de) Verfahren zur herstellung von transistoren durch ionenimplantation
DE2133979B2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE3003391C2 (de) Strahlungsdetektor mit einem passivierten pn-Halbleiterübergang
EP0062725B1 (de) Verfahren zum Herstellen eines integrierten Planartransistors
DE69025784T2 (de) Nichtflüchtige Speicher-Halbleiteranordnung
DE2625856B2 (https=)
DE2162219A1 (de) Verfahren zum Herstellen eines Feldeffekttransistors
WO1999038205A1 (de) Verfahren zur herstellung von dioden

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection