DE2646301C3 - Ladungsgekoppeltes Halbleiterbauelement - Google Patents
Ladungsgekoppeltes HalbleiterbauelementInfo
- Publication number
- DE2646301C3 DE2646301C3 DE2646301A DE2646301A DE2646301C3 DE 2646301 C3 DE2646301 C3 DE 2646301C3 DE 2646301 A DE2646301 A DE 2646301A DE 2646301 A DE2646301 A DE 2646301A DE 2646301 C3 DE2646301 C3 DE 2646301C3
- Authority
- DE
- Germany
- Prior art keywords
- channel
- charge
- electrodes
- semiconductor component
- displacement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000006073 displacement reaction Methods 0.000 claims description 37
- 238000012546 transfer Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 238000011156 evaluation Methods 0.000 claims description 8
- 230000008929 regeneration Effects 0.000 claims description 7
- 238000011069 regeneration method Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- -1 tin oxide Chemical class 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50131941A JPS5255478A (en) | 1975-10-31 | 1975-10-31 | Charge transfer device |
| JP15323275A JPS5945248B2 (ja) | 1975-12-24 | 1975-12-24 | デンカテンソウソシオモチイタ トランスバ−サルフイルタ |
| JP15687675A JPS5282009A (en) | 1975-12-29 | 1975-12-29 | Line-sensor with change transfer unit |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2646301A1 DE2646301A1 (de) | 1977-06-02 |
| DE2646301B2 DE2646301B2 (de) | 1980-05-14 |
| DE2646301C3 true DE2646301C3 (de) | 1981-01-15 |
Family
ID=27316395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2646301A Expired DE2646301C3 (de) | 1975-10-31 | 1976-10-14 | Ladungsgekoppeltes Halbleiterbauelement |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US4531225A (nl) |
| CA (1) | CA1081363A (nl) |
| DE (1) | DE2646301C3 (nl) |
| FR (1) | FR2330118A1 (nl) |
| GB (1) | GB1563341A (nl) |
| NL (1) | NL182765C (nl) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2646301C3 (de) * | 1975-10-31 | 1981-01-15 | Fujitsu Ltd., Kawasaki, Kanagawa (Japan) | Ladungsgekoppeltes Halbleiterbauelement |
| US4371885A (en) * | 1979-10-10 | 1983-02-01 | Hughes Aircraft Company | Charge coupled device improved meander channel serial register |
| JPS58184760A (ja) * | 1982-04-22 | 1983-10-28 | Sony Corp | 電荷転送素子 |
| US4695715A (en) * | 1985-12-12 | 1987-09-22 | Northrop Corporation | Infrared imaging array employing metal tabs as connecting means |
| NL8600786A (nl) * | 1986-03-27 | 1987-10-16 | Philips Nv | Ladingsgekoppelde inrichting. |
| US4972138A (en) * | 1987-05-11 | 1990-11-20 | Hewlett Packard Co. | Oscilloscope-like user-interface for a logic analyzer |
| US4857979A (en) * | 1988-06-20 | 1989-08-15 | Ford Aerospace & Communications Corporation | Platinum silicide imager |
| US5225798A (en) * | 1989-02-13 | 1993-07-06 | Electronic Decisions Incorporated | Programmable transversal filter |
| JPH03114236A (ja) * | 1989-09-28 | 1991-05-15 | Sony Corp | 電荷転送装置 |
| US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
| US5528643A (en) * | 1989-11-13 | 1996-06-18 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
| JP3146526B2 (ja) * | 1991-07-09 | 2001-03-19 | ソニー株式会社 | Ｃｃｄ撮像素子 |
| JP4471677B2 (ja) * | 2004-02-09 | 2010-06-02 | Ｎｅｃエレクトロニクス株式会社 | 固体撮像装置及び電荷転送部 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
| US3921194A (en) * | 1970-07-20 | 1975-11-18 | Gen Electric | Method and apparatus for storing and transferring information |
| NL165869C (nl) * | 1970-09-25 | 1981-05-15 | Philips Nv | Analoog schuifregister. |
| US3789240A (en) * | 1970-10-26 | 1974-01-29 | Rca Corp | Bucket brigade scanning of sensor array |
| US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
| US3906542A (en) * | 1972-06-14 | 1975-09-16 | Bell Telephone Labor Inc | Conductively connected charge coupled devices |
| US3973138A (en) * | 1975-05-05 | 1976-08-03 | General Electric Company | Bucket brigade transversal filter |
| DE2646301C3 (de) * | 1975-10-31 | 1981-01-15 | Fujitsu Ltd., Kawasaki, Kanagawa (Japan) | Ladungsgekoppeltes Halbleiterbauelement |
| CA1101993A (en) * | 1976-04-15 | 1981-05-26 | Kunihiro Tanikawa | Charge coupled device |
-
1976
- 1976-10-14 DE DE2646301A patent/DE2646301C3/de not_active Expired
- 1976-10-27 FR FR7632400A patent/FR2330118A1/fr active Granted
- 1976-10-29 GB GB45177/76A patent/GB1563341A/en not_active Expired
- 1976-10-29 CA CA264,443A patent/CA1081363A/en not_active Expired
- 1976-10-29 NL NLAANVRAGE7612053,A patent/NL182765C/nl not_active IP Right Cessation
-
1981
- 1981-12-18 US US06/332,241 patent/US4531225A/en not_active Expired - Lifetime
-
1985
- 1985-05-08 US US06/731,797 patent/US4639940A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4639940A (en) | 1987-01-27 |
| DE2646301A1 (de) | 1977-06-02 |
| US4531225A (en) | 1985-07-23 |
| FR2330118B1 (nl) | 1982-01-22 |
| NL7612053A (nl) | 1977-05-03 |
| DE2646301B2 (de) | 1980-05-14 |
| GB1563341A (en) | 1980-03-26 |
| CA1081363A (en) | 1980-07-08 |
| NL182765C (nl) | 1988-05-02 |
| FR2330118A1 (fr) | 1977-05-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: REINLAENDER, C., DIPL.-ING. DR.-ING., PAT.-ANW., 8000 MUENCHEN |