DE2636909C3 - Verfahren und Vorrichtung zum Ziehen eines Kristalls - Google Patents

Verfahren und Vorrichtung zum Ziehen eines Kristalls

Info

Publication number
DE2636909C3
DE2636909C3 DE2636909A DE2636909A DE2636909C3 DE 2636909 C3 DE2636909 C3 DE 2636909C3 DE 2636909 A DE2636909 A DE 2636909A DE 2636909 A DE2636909 A DE 2636909A DE 2636909 C3 DE2636909 C3 DE 2636909C3
Authority
DE
Germany
Prior art keywords
crucible
coolant
vessel
space
iridium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2636909A
Other languages
German (de)
English (en)
Other versions
DE2636909A1 (de
DE2636909B2 (de
Inventor
Walter Dr. Schaffhausen Schmidt (Schweiz)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rio Tinto Switzerland AG
Original Assignee
Schweizerische Aluminium AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schweizerische Aluminium AG filed Critical Schweizerische Aluminium AG
Priority to GB3270877A priority Critical patent/GB1587249A/en
Priority to JP9405977A priority patent/JPS5328085A/ja
Priority to NL7708694A priority patent/NL7708694A/xx
Publication of DE2636909A1 publication Critical patent/DE2636909A1/de
Publication of DE2636909B2 publication Critical patent/DE2636909B2/de
Application granted granted Critical
Publication of DE2636909C3 publication Critical patent/DE2636909C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2636909A 1976-08-05 1976-08-17 Verfahren und Vorrichtung zum Ziehen eines Kristalls Expired DE2636909C3 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB3270877A GB1587249A (en) 1976-08-05 1977-08-04 Growing of crystals
JP9405977A JPS5328085A (en) 1976-08-05 1977-08-05 Method and apparatus for growing crystals
NL7708694A NL7708694A (nl) 1976-08-05 1977-08-05 Werkwijze en inrichting voor het kweken van kristallen.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1004376A CH624151A5 (enExample) 1976-08-05 1976-08-05

Publications (3)

Publication Number Publication Date
DE2636909A1 DE2636909A1 (de) 1978-02-09
DE2636909B2 DE2636909B2 (de) 1979-09-13
DE2636909C3 true DE2636909C3 (de) 1980-06-04

Family

ID=4358690

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2636909A Expired DE2636909C3 (de) 1976-08-05 1976-08-17 Verfahren und Vorrichtung zum Ziehen eines Kristalls

Country Status (3)

Country Link
US (1) US4233270A (enExample)
CH (1) CH624151A5 (enExample)
DE (1) DE2636909C3 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988398A (ja) * 1982-11-08 1984-05-22 Shin Etsu Chem Co Ltd ガリウムガ−ネツト単結晶の製造方法
US5302559A (en) * 1989-02-17 1994-04-12 U.S. Philips Corporation Mixed crystals of doped rare earth gallium garnet
US4971652A (en) * 1989-12-18 1990-11-20 General Electric Company Method and apparatus for crystal growth control
US5162072A (en) * 1990-12-11 1992-11-10 General Electric Company Apparatus and method for control of melt flow pattern in a crystal growth process
US5394830A (en) * 1993-08-27 1995-03-07 General Electric Company Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process
JP3242292B2 (ja) * 1995-06-15 2001-12-25 シャープ株式会社 多結晶半導体の製造方法および製造装置
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods
US5863326A (en) * 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
DE10362074B4 (de) * 2003-10-14 2007-12-06 Schott Ag Hochschmelzendes Glas oder Glaskeramik sowie der Verwendung

Also Published As

Publication number Publication date
US4233270A (en) 1980-11-11
DE2636909A1 (de) 1978-02-09
CH624151A5 (enExample) 1981-07-15
DE2636909B2 (de) 1979-09-13

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Legal Events

Date Code Title Description
OAM Search report available
OAP Request for examination filed
OC Search report available
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee