DE2636369C2 - Feldeffekttransistor mit isolierter Gate-Elektrode - Google Patents

Feldeffekttransistor mit isolierter Gate-Elektrode

Info

Publication number
DE2636369C2
DE2636369C2 DE2636369A DE2636369A DE2636369C2 DE 2636369 C2 DE2636369 C2 DE 2636369C2 DE 2636369 A DE2636369 A DE 2636369A DE 2636369 A DE2636369 A DE 2636369A DE 2636369 C2 DE2636369 C2 DE 2636369C2
Authority
DE
Germany
Prior art keywords
zone
substrate
field effect
effect transistor
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2636369A
Other languages
German (de)
English (en)
Other versions
DE2636369A1 (de
Inventor
Akira Musashino Tokyo Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE2636369A1 publication Critical patent/DE2636369A1/de
Application granted granted Critical
Publication of DE2636369C2 publication Critical patent/DE2636369C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
DE2636369A 1975-08-14 1976-08-12 Feldeffekttransistor mit isolierter Gate-Elektrode Expired DE2636369C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50098092A JPS5222480A (en) 1975-08-14 1975-08-14 Insulating gate field effect transistor

Publications (2)

Publication Number Publication Date
DE2636369A1 DE2636369A1 (de) 1977-02-17
DE2636369C2 true DE2636369C2 (de) 1981-09-24

Family

ID=14210688

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2636369A Expired DE2636369C2 (de) 1975-08-14 1976-08-12 Feldeffekttransistor mit isolierter Gate-Elektrode

Country Status (6)

Country Link
US (1) US4091405A (enExample)
JP (1) JPS5222480A (enExample)
CA (1) CA1054723A (enExample)
DE (1) DE2636369C2 (enExample)
FR (1) FR2321194A1 (enExample)
NL (1) NL171397C (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448489A (en) * 1977-09-26 1979-04-17 Nippon Telegr & Teleph Corp <Ntt> Mis type semiconductor device
US4217599A (en) * 1977-12-21 1980-08-12 Tektronix, Inc. Narrow channel MOS devices and method of manufacturing
DE2802838A1 (de) * 1978-01-23 1979-08-16 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
JPS55105373A (en) * 1978-12-04 1980-08-12 Mostek Corp Metal oxide semiconductor transistor and method of fabricating same
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
DE2926416A1 (de) * 1979-06-29 1981-01-22 Siemens Ag Dynamische halbleiter-speicherzelle und verfahren zu ihrer herstellung
DE2926417A1 (de) * 1979-06-29 1981-01-22 Siemens Ag Dynamische halbleiterspeicherzelle und verfahren zu ihrer herstellung
JPS56501509A (enExample) * 1979-11-14 1981-10-15
US4937640A (en) * 1980-11-03 1990-06-26 International Business Machines Corporation Short channel MOSFET
JPS58115863A (ja) * 1981-12-28 1983-07-09 Matsushita Electric Ind Co Ltd 絶縁ゲ−ト型電界効果半導体装置およびその製造方法
JPS62217666A (ja) * 1986-03-18 1987-09-25 Nippon Denso Co Ltd Ｍｉｓトランジスタ
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
JPH0734475B2 (ja) * 1989-03-10 1995-04-12 株式会社東芝 半導体装置
JP3229012B2 (ja) * 1992-05-21 2001-11-12 株式会社東芝 半導体装置の製造方法
US5372960A (en) * 1994-01-04 1994-12-13 Motorola, Inc. Method of fabricating an insulated gate semiconductor device
DE112018000797T5 (de) 2017-02-13 2019-12-05 Uacj Corporation Stranggepresste flache perforierte Aluminiumröhre mit hervorragenden Hartlöteigenschaften und Außenoberflächenkorrosionsbeständigkeit, und unter Verwendung davon erhaltener Aluminiumwärmetauscher
CN110290883A (zh) 2017-02-13 2019-09-27 株式会社Uacj 内外表面防腐蚀性优异的铝挤出扁平多孔管及使用其而成的铝制热交换器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3600647A (en) * 1970-03-02 1971-08-17 Gen Electric Field-effect transistor with reduced drain-to-substrate capacitance
JPS4931509U (enExample) * 1972-06-17 1974-03-19
US3891190A (en) * 1972-07-07 1975-06-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
JPS5636585B2 (enExample) * 1973-07-02 1981-08-25
JPS5024084A (enExample) * 1973-07-05 1975-03-14

Also Published As

Publication number Publication date
CA1054723A (en) 1979-05-15
US4091405A (en) 1978-05-23
NL7609052A (nl) 1977-02-16
FR2321194B1 (enExample) 1979-08-17
DE2636369A1 (de) 1977-02-17
FR2321194A1 (fr) 1977-03-11
JPS5222480A (en) 1977-02-19
NL171397B (nl) 1982-10-18
NL171397C (nl) 1983-03-16

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Legal Events

Date Code Title Description
D2 Grant after examination
8327 Change in the person/name/address of the patent owner

Owner name: NIPPON TELEGRAPH AND TELEPHONE CORP., TOKIO/TOKYO,

8328 Change in the person/name/address of the agent

Free format text: WEICKMANN, H., DIPL.-ING. FINCKE, K., DIPL.-PHYS. DR. WEICKMANN, F., DIPL.-ING. HUBER, B., DIPL.-CHEM. LISKA, H., DIPL.-ING. DR.-ING., PAT.-ANW., 8000 MUENCHEN