DE2632447A1 - Cmos-halbleitervorrichtung - Google Patents
Cmos-halbleitervorrichtungInfo
- Publication number
- DE2632447A1 DE2632447A1 DE19762632447 DE2632447A DE2632447A1 DE 2632447 A1 DE2632447 A1 DE 2632447A1 DE 19762632447 DE19762632447 DE 19762632447 DE 2632447 A DE2632447 A DE 2632447A DE 2632447 A1 DE2632447 A1 DE 2632447A1
- Authority
- DE
- Germany
- Prior art keywords
- area
- transistor
- current
- protective layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 239000000758 substrate Substances 0.000 claims description 74
- 239000011241 protective layer Substances 0.000 claims description 57
- 230000003321 amplification Effects 0.000 claims description 28
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 28
- 230000003071 parasitic effect Effects 0.000 claims description 23
- 239000010410 layer Substances 0.000 claims description 14
- 230000004913 activation Effects 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 description 53
- 238000010438 heat treatment Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002452 interceptive effect Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000009998 heat setting Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 102000003712 Complement factor B Human genes 0.000 description 1
- 108090000056 Complement factor B Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087397A JPS5211872A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2632447A1 true DE2632447A1 (de) | 1977-01-20 |
Family
ID=13913732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762632447 Ceased DE2632447A1 (de) | 1975-07-18 | 1976-07-19 | Cmos-halbleitervorrichtung |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5211872A (da) |
| CH (1) | CH611739A5 (da) |
| DE (1) | DE2632447A1 (da) |
| FR (1) | FR2318503A1 (da) |
| GB (1) | GB1559582A (da) |
| MY (1) | MY8100316A (da) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0013482A2 (en) * | 1978-12-27 | 1980-07-23 | Fujitsu Limited | Complementary metal-oxide semiconductor |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53128281A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Insulated gate field effect type semiconductor device for large power |
| GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
| JPS58210660A (ja) * | 1982-06-01 | 1983-12-07 | Seiko Epson Corp | 半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3226611A (en) * | 1962-08-23 | 1965-12-28 | Motorola Inc | Semiconductor device |
| DE2411839A1 (de) * | 1973-03-14 | 1974-09-26 | Rca Corp | Integrierte feldeffekttransistorschaltung |
-
1975
- 1975-07-18 JP JP50087397A patent/JPS5211872A/ja active Granted
-
1976
- 1976-07-14 GB GB2928276A patent/GB1559582A/en not_active Expired
- 1976-07-19 CH CH923676A patent/CH611739A5/xx not_active IP Right Cessation
- 1976-07-19 DE DE19762632447 patent/DE2632447A1/de not_active Ceased
- 1976-07-19 FR FR7621993A patent/FR2318503A1/fr active Granted
-
1981
- 1981-12-30 MY MY8100316A patent/MY8100316A/xx unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3226611A (en) * | 1962-08-23 | 1965-12-28 | Motorola Inc | Semiconductor device |
| DE2411839A1 (de) * | 1973-03-14 | 1974-09-26 | Rca Corp | Integrierte feldeffekttransistorschaltung |
Non-Patent Citations (2)
| Title |
|---|
| US-Z.: "IEEE J. of Sol.-St. Circ.", Bd. SC-9, No. 3, Juni 1974, S. 103-110 * |
| US-Z.: "Microelectronics and Reliability", Bd. 13, Okt. 1974, S. 363-372 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0013482A2 (en) * | 1978-12-27 | 1980-07-23 | Fujitsu Limited | Complementary metal-oxide semiconductor |
| EP0013482A3 (en) * | 1978-12-27 | 1980-10-15 | Fujitsu Limited | Complementary metal-oxide semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| MY8100316A (en) | 1981-12-31 |
| FR2318503A1 (fr) | 1977-02-11 |
| FR2318503B1 (da) | 1980-05-16 |
| JPS5211872A (en) | 1977-01-29 |
| JPS626347B2 (da) | 1987-02-10 |
| CH611739A5 (en) | 1979-06-15 |
| GB1559582A (en) | 1980-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8128 | New person/name/address of the agent |
Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ |
|
| 8131 | Rejection |