DE2619873C3 - Verfahren zum Überprüfen eines eine Vielzahl nominell identischer Muster tragenden Werkstücks sowie eine Vorrichtung zum Durchführen des Verfahrens - Google Patents
Verfahren zum Überprüfen eines eine Vielzahl nominell identischer Muster tragenden Werkstücks sowie eine Vorrichtung zum Durchführen des VerfahrensInfo
- Publication number
- DE2619873C3 DE2619873C3 DE2619873A DE2619873A DE2619873C3 DE 2619873 C3 DE2619873 C3 DE 2619873C3 DE 2619873 A DE2619873 A DE 2619873A DE 2619873 A DE2619873 A DE 2619873A DE 2619873 C3 DE2619873 C3 DE 2619873C3
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- columns
- patterns
- areas
- storage medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005286 illumination Methods 0.000 description 11
- 238000003384 imaging method Methods 0.000 description 9
- 238000007689 inspection Methods 0.000 description 7
- 238000012795 verification Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/574,617 US3963354A (en) | 1975-05-05 | 1975-05-05 | Inspection of masks and wafers by image dissection |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2619873A1 DE2619873A1 (de) | 1976-11-18 |
| DE2619873B2 DE2619873B2 (de) | 1980-03-20 |
| DE2619873C3 true DE2619873C3 (de) | 1982-01-21 |
Family
ID=24296889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2619873A Expired DE2619873C3 (de) | 1975-05-05 | 1976-05-05 | Verfahren zum Überprüfen eines eine Vielzahl nominell identischer Muster tragenden Werkstücks sowie eine Vorrichtung zum Durchführen des Verfahrens |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3963354A (enExample) |
| JP (1) | JPS51137379A (enExample) |
| CA (1) | CA1045252A (enExample) |
| DE (1) | DE2619873C3 (enExample) |
| FR (1) | FR2310596A1 (enExample) |
| GB (1) | GB1532901A (enExample) |
| NL (1) | NL173111C (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2638138C3 (de) * | 1976-08-25 | 1979-05-03 | Kloeckner-Werke Ag, 4100 Duisburg | Vorrichtung zum Erkennen und Aussortieren fehlerhafter Packungen, die längs einer Förderstrecke transportiert werden |
| JPS5371563A (en) * | 1976-12-08 | 1978-06-26 | Hitachi Ltd | Automatic inspection correcting method for mask |
| US4134066A (en) * | 1977-03-24 | 1979-01-09 | International Business Machines Corporation | Wafer indexing system using a grid pattern and coding and orientation marks in each grid cell |
| US4349880A (en) * | 1979-03-19 | 1982-09-14 | Rca Corporation | Inspection system for detecting defects in regular patterns |
| US4292672A (en) * | 1979-03-19 | 1981-09-29 | Rca Corporation | Inspection system for detecting defects in regular patterns |
| JPS582845A (ja) | 1981-06-30 | 1983-01-08 | Toshiba Corp | フォトマスク及びパタ−ン評価方法 |
| JPS5867093A (ja) * | 1981-10-19 | 1983-04-21 | 株式会社東芝 | 印刷回路基板検査方法及びその装置 |
| EP0119198A4 (en) * | 1982-09-20 | 1986-07-08 | Contrex Inc | AUTOMATIC SEMICONDUCTOR SURFACE CONTROL DEVICE AND METHOD. |
| US4512659A (en) * | 1983-08-10 | 1985-04-23 | Tencor Instruments | Apparatus for calibrating a surface scanner |
| JPS6076606A (ja) * | 1983-10-03 | 1985-05-01 | Nippon Kogaku Kk <Nikon> | マスクの欠陥検査方法 |
| JPH061370B2 (ja) * | 1983-11-24 | 1994-01-05 | 株式会社東芝 | マスク欠陥検査装置 |
| US4710440A (en) * | 1986-07-14 | 1987-12-01 | Rca Corporation | Test mask for determining alignment of an automatic IC mask testing apparatus |
| AT392857B (de) * | 1987-07-13 | 1991-06-25 | Ims Ionen Mikrofab Syst | Vorrichtung und verfahren zur inspektion einer maske |
| US5131755A (en) * | 1988-02-19 | 1992-07-21 | Chadwick Curt H | Automatic high speed optical inspection system |
| DE8808293U1 (de) * | 1988-06-28 | 1989-07-27 | Siemens AG, 1000 Berlin und 8000 München | Optik zur dreidimensionalen Formerfassung von Prüfobjekten mit strukturierter Beleuchtung mit lichtablenkenden Rastern |
| US5085517A (en) * | 1989-10-31 | 1992-02-04 | Chadwick Curt H | Automatic high speed optical inspection system |
| US5093580A (en) * | 1990-03-02 | 1992-03-03 | Spectra-Tech, Inc. | ATR objective and method for sample analyzation using an ATR crystal |
| US5051602A (en) * | 1990-03-02 | 1991-09-24 | Spectra-Tech, Inc. | Optical system and method for sample analyzation |
| US5019715A (en) * | 1990-03-02 | 1991-05-28 | Spectra-Tech, Inc. | Optical system and method for sample analyzation |
| IL99823A0 (en) * | 1990-11-16 | 1992-08-18 | Orbot Instr Ltd | Optical inspection method and apparatus |
| US5200609A (en) * | 1991-08-27 | 1993-04-06 | Sting Donald W | Radiant energy spectroscopy system with diamond internal reflection element |
| US5214486A (en) * | 1991-12-12 | 1993-05-25 | Hoya Micro Mask, Inc. | Monitor plate for automatic particle detection system |
| US5383018A (en) * | 1992-12-28 | 1995-01-17 | National Semiconductor Corporation | Apparatus and method for calibration of patterned wafer scanners |
| JP3566470B2 (ja) * | 1996-09-17 | 2004-09-15 | 株式会社日立製作所 | パターン検査方法及びその装置 |
| DE19713362A1 (de) * | 1997-03-29 | 1998-10-01 | Zeiss Carl Jena Gmbh | Konfokale mikroskopische Anordnung |
| JP3152203B2 (ja) * | 1998-05-27 | 2001-04-03 | 株式会社東京精密 | 外観検査装置 |
| US6324298B1 (en) | 1998-07-15 | 2001-11-27 | August Technology Corp. | Automated wafer defect inspection system and a process of performing such inspection |
| US6946655B2 (en) | 2001-11-07 | 2005-09-20 | Applied Materials, Inc. | Spot grid array electron imaging system |
| US6639201B2 (en) * | 2001-11-07 | 2003-10-28 | Applied Materials, Inc. | Spot grid array imaging system |
| JP2005533365A (ja) * | 2001-11-07 | 2005-11-04 | アプライド マテリアルズ インコーポレイテッド | マスクレスの光子−電子スポット格子アレイ印刷装置 |
| US6828542B2 (en) * | 2002-06-07 | 2004-12-07 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
| US7629993B2 (en) * | 2002-09-30 | 2009-12-08 | Rudolph Technologies, Inc. | Automated wafer defect inspection system using backside illumination |
| US7026832B2 (en) * | 2002-10-28 | 2006-04-11 | Dainippon Screen Mfg. Co., Ltd. | Probe mark reading device and probe mark reading method |
| JP4181159B2 (ja) * | 2005-09-29 | 2008-11-12 | 株式会社東芝 | 欠陥検査装置 |
| DE102005061834B4 (de) * | 2005-12-23 | 2007-11-08 | Ioss Intelligente Optische Sensoren & Systeme Gmbh | Vorrichtung und Verfahren zum optischen Prüfen einer Oberfläche |
| DE102008048660B4 (de) * | 2008-09-22 | 2015-06-18 | Carl Zeiss Sms Gmbh | Verfahren und Vorrichtung zur Vermessung von Strukturen auf Photolithographiemasken |
| CN103219256A (zh) * | 2012-01-20 | 2013-07-24 | 艾特麦司股份有限公司 | 发光二极体磊晶片的对应磊晶载盘位置量测分布图像的呈现方法 |
| NL2014399A (en) * | 2014-04-24 | 2015-11-02 | Asml Holding Nv | Compact two-sided reticle inspection system. |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3434020A (en) * | 1966-12-30 | 1969-03-18 | Texas Instruments Inc | Ohmic contacts consisting of a first level of molybdenum-gold mixture of gold and vanadium and a second level of molybdenum-gold |
| US3581375A (en) * | 1969-03-07 | 1971-06-01 | Ibm | Method and apparatus for manufacturing integrated circuits |
| DE2256617C3 (de) * | 1971-11-19 | 1978-08-31 | Hitachi, Ltd., Tokio | Einrichtung zur Analyse einer Vorlage |
| US3814845A (en) * | 1973-03-01 | 1974-06-04 | Bell Telephone Labor Inc | Object positioning |
-
1975
- 1975-05-05 US US05/574,617 patent/US3963354A/en not_active Expired - Lifetime
-
1976
- 1976-04-30 CA CA251,513A patent/CA1045252A/en not_active Expired
- 1976-05-04 FR FR7613278A patent/FR2310596A1/fr active Granted
- 1976-05-04 NL NLAANVRAGE7604735,A patent/NL173111C/xx not_active IP Right Cessation
- 1976-05-05 GB GB18357/76A patent/GB1532901A/en not_active Expired
- 1976-05-05 DE DE2619873A patent/DE2619873C3/de not_active Expired
- 1976-05-06 JP JP51050965A patent/JPS51137379A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51137379A (en) | 1976-11-27 |
| FR2310596B1 (enExample) | 1978-08-25 |
| FR2310596A1 (fr) | 1976-12-03 |
| NL7604735A (nl) | 1976-11-09 |
| DE2619873A1 (de) | 1976-11-18 |
| JPS5324783B2 (enExample) | 1978-07-22 |
| US3963354A (en) | 1976-06-15 |
| DE2619873B2 (de) | 1980-03-20 |
| NL173111B (nl) | 1983-07-01 |
| CA1045252A (en) | 1978-12-26 |
| NL173111C (nl) | 1983-12-01 |
| GB1532901A (en) | 1978-11-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US |
|
| 8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W., DIPL.-PHYS. DR.RER.NAT., 8000 MUENCHEN ZWIRNER,G., DIPL.-ING. DIPL.-WIRTSCH.-ING., PAT.-ANW., 6200 WIESBADEN |