DE2618760C3 - Halbleiter-Speichervorrichtung - Google Patents
Halbleiter-SpeichervorrichtungInfo
- Publication number
- DE2618760C3 DE2618760C3 DE2618760A DE2618760A DE2618760C3 DE 2618760 C3 DE2618760 C3 DE 2618760C3 DE 2618760 A DE2618760 A DE 2618760A DE 2618760 A DE2618760 A DE 2618760A DE 2618760 C3 DE2618760 C3 DE 2618760C3
- Authority
- DE
- Germany
- Prior art keywords
- data
- switching element
- circuit
- voltage
- igfets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 230000005669 field effect Effects 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 description 29
- 238000000034 method Methods 0.000 description 4
- 238000006880 cross-coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50050792A JPS51127628A (en) | 1975-04-28 | 1975-04-28 | Semiconductor memory |
| JP50144522A JPS5818711B2 (ja) | 1975-12-03 | 1975-12-03 | ハンドウタイキオクソウチノ デンアツセンスカイロ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2618760A1 DE2618760A1 (de) | 1976-11-04 |
| DE2618760B2 DE2618760B2 (de) | 1978-04-06 |
| DE2618760C3 true DE2618760C3 (de) | 1978-11-30 |
Family
ID=26391263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2618760A Expired DE2618760C3 (de) | 1975-04-28 | 1976-04-28 | Halbleiter-Speichervorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4103345A (enExample) |
| DE (1) | DE2618760C3 (enExample) |
| FR (1) | FR2309953A1 (enExample) |
| GB (1) | GB1522753A (enExample) |
| MY (1) | MY8100312A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6032912B2 (ja) * | 1979-09-13 | 1985-07-31 | 株式会社東芝 | Ｃｍｏｓセンスアンプ回路 |
| JPS59218696A (ja) * | 1983-05-26 | 1984-12-08 | Toshiba Corp | 半導体メモリ |
| JPS59221891A (ja) * | 1983-05-31 | 1984-12-13 | Toshiba Corp | スタテイツク型半導体記憶装置 |
| JPS6061985A (ja) * | 1983-09-14 | 1985-04-09 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR920013458A (ko) * | 1990-12-12 | 1992-07-29 | 김광호 | 차동감지 증폭회로 |
| JPH04214297A (ja) * | 1990-12-13 | 1992-08-05 | Mitsubishi Electric Corp | 増幅回路 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3720922A (en) * | 1971-03-17 | 1973-03-13 | Rca Corp | Charge coupled memory |
| US3778782A (en) * | 1971-07-12 | 1973-12-11 | Texas Instruments Inc | Igfet dynamic address decode circuit |
| US3838295A (en) * | 1973-02-05 | 1974-09-24 | Lockheed Electronics Co | Ratioless mos sense amplifier |
| GB1502270A (en) * | 1974-10-30 | 1978-03-01 | Hitachi Ltd | Word line driver circuit in memory circuit |
| US3964031A (en) * | 1975-05-05 | 1976-06-15 | Rca Corporation | Memory cell |
| US4045785A (en) * | 1975-11-05 | 1977-08-30 | American Microsystems, Inc. | Sense amplifier for static memory device |
-
1976
- 1976-04-26 US US05/680,236 patent/US4103345A/en not_active Expired - Lifetime
- 1976-04-28 DE DE2618760A patent/DE2618760C3/de not_active Expired
- 1976-04-28 GB GB17236/76A patent/GB1522753A/en not_active Expired
- 1976-04-28 FR FR7612595A patent/FR2309953A1/fr active Granted
-
1981
- 1981-12-31 MY MY1981312A patent/MY8100312A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US4103345A (en) | 1978-07-25 |
| DE2618760A1 (de) | 1976-11-04 |
| FR2309953B1 (enExample) | 1981-12-04 |
| GB1522753A (en) | 1978-08-31 |
| FR2309953A1 (fr) | 1976-11-26 |
| MY8100312A (en) | 1981-12-31 |
| DE2618760B2 (de) | 1978-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN |
|
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |