MY8100312A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
MY8100312A
MY8100312A MY1981312A MY8100312A MY8100312A MY 8100312 A MY8100312 A MY 8100312A MY 1981312 A MY1981312 A MY 1981312A MY 8100312 A MY8100312 A MY 8100312A MY 8100312 A MY8100312 A MY 8100312A
Authority
MY
Malaysia
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
MY1981312A
Other languages
English (en)
Inventor
Suzuki Yasoji
Ochii Kiyofumi
Original Assignee
Tokyo Shibaura Electric Co.Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50050792A external-priority patent/JPS51127628A/ja
Priority claimed from JP50144522A external-priority patent/JPS5818711B2/ja
Application filed by Tokyo Shibaura Electric Co.Ltd. filed Critical Tokyo Shibaura Electric Co.Ltd.
Publication of MY8100312A publication Critical patent/MY8100312A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
MY1981312A 1975-04-28 1981-12-31 Semiconductor memory device MY8100312A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP50050792A JPS51127628A (en) 1975-04-28 1975-04-28 Semiconductor memory
JP50144522A JPS5818711B2 (ja) 1975-12-03 1975-12-03 ハンドウタイキオクソウチノ デンアツセンスカイロ

Publications (1)

Publication Number Publication Date
MY8100312A true MY8100312A (en) 1981-12-31

Family

ID=26391263

Family Applications (1)

Application Number Title Priority Date Filing Date
MY1981312A MY8100312A (en) 1975-04-28 1981-12-31 Semiconductor memory device

Country Status (5)

Country Link
US (1) US4103345A (enExample)
DE (1) DE2618760C3 (enExample)
FR (1) FR2309953A1 (enExample)
GB (1) GB1522753A (enExample)
MY (1) MY8100312A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032912B2 (ja) * 1979-09-13 1985-07-31 株式会社東芝 Ｃｍｏｓセンスアンプ回路
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
JPS59221891A (ja) * 1983-05-31 1984-12-13 Toshiba Corp スタテイツク型半導体記憶装置
JPS6061985A (ja) * 1983-09-14 1985-04-09 Mitsubishi Electric Corp 半導体記憶装置
KR920013458A (ko) * 1990-12-12 1992-07-29 김광호 차동감지 증폭회로
JPH04214297A (ja) * 1990-12-13 1992-08-05 Mitsubishi Electric Corp 増幅回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3720922A (en) * 1971-03-17 1973-03-13 Rca Corp Charge coupled memory
US3778782A (en) * 1971-07-12 1973-12-11 Texas Instruments Inc Igfet dynamic address decode circuit
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
GB1502270A (en) * 1974-10-30 1978-03-01 Hitachi Ltd Word line driver circuit in memory circuit
US3964031A (en) * 1975-05-05 1976-06-15 Rca Corporation Memory cell
US4045785A (en) * 1975-11-05 1977-08-30 American Microsystems, Inc. Sense amplifier for static memory device

Also Published As

Publication number Publication date
US4103345A (en) 1978-07-25
DE2618760A1 (de) 1976-11-04
DE2618760C3 (de) 1978-11-30
FR2309953B1 (enExample) 1981-12-04
GB1522753A (en) 1978-08-31
FR2309953A1 (fr) 1976-11-26
DE2618760B2 (de) 1978-04-06

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