GB1522753A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- GB1522753A GB1522753A GB17236/76A GB1723676A GB1522753A GB 1522753 A GB1522753 A GB 1522753A GB 17236/76 A GB17236/76 A GB 17236/76A GB 1723676 A GB1723676 A GB 1723676A GB 1522753 A GB1522753 A GB 1522753A
- Authority
- GB
- United Kingdom
- Prior art keywords
- igfets
- data
- lines
- column selection
- selection signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000001514 detection method Methods 0.000 abstract 3
- 230000000295 complement effect Effects 0.000 abstract 2
- 239000011159 matrix material Substances 0.000 abstract 2
- 230000004048 modification Effects 0.000 abstract 2
- 238000012986 modification Methods 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50050792A JPS51127628A (en) | 1975-04-28 | 1975-04-28 | Semiconductor memory |
| JP50144522A JPS5818711B2 (ja) | 1975-12-03 | 1975-12-03 | ハンドウタイキオクソウチノ デンアツセンスカイロ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1522753A true GB1522753A (en) | 1978-08-31 |
Family
ID=26391263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB17236/76A Expired GB1522753A (en) | 1975-04-28 | 1976-04-28 | Semiconductor memory device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4103345A (enExample) |
| DE (1) | DE2618760C3 (enExample) |
| FR (1) | FR2309953A1 (enExample) |
| GB (1) | GB1522753A (enExample) |
| MY (1) | MY8100312A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6032912B2 (ja) * | 1979-09-13 | 1985-07-31 | 株式会社東芝 | Ｃｍｏｓセンスアンプ回路 |
| JPS59218696A (ja) * | 1983-05-26 | 1984-12-08 | Toshiba Corp | 半導体メモリ |
| JPS59221891A (ja) * | 1983-05-31 | 1984-12-13 | Toshiba Corp | スタテイツク型半導体記憶装置 |
| JPS6061985A (ja) * | 1983-09-14 | 1985-04-09 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR920013458A (ko) * | 1990-12-12 | 1992-07-29 | 김광호 | 차동감지 증폭회로 |
| JPH04214297A (ja) * | 1990-12-13 | 1992-08-05 | Mitsubishi Electric Corp | 増幅回路 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3720922A (en) * | 1971-03-17 | 1973-03-13 | Rca Corp | Charge coupled memory |
| US3778782A (en) * | 1971-07-12 | 1973-12-11 | Texas Instruments Inc | Igfet dynamic address decode circuit |
| US3838295A (en) * | 1973-02-05 | 1974-09-24 | Lockheed Electronics Co | Ratioless mos sense amplifier |
| GB1502270A (en) * | 1974-10-30 | 1978-03-01 | Hitachi Ltd | Word line driver circuit in memory circuit |
| US3964031A (en) * | 1975-05-05 | 1976-06-15 | Rca Corporation | Memory cell |
| US4045785A (en) * | 1975-11-05 | 1977-08-30 | American Microsystems, Inc. | Sense amplifier for static memory device |
-
1976
- 1976-04-26 US US05/680,236 patent/US4103345A/en not_active Expired - Lifetime
- 1976-04-28 DE DE2618760A patent/DE2618760C3/de not_active Expired
- 1976-04-28 GB GB17236/76A patent/GB1522753A/en not_active Expired
- 1976-04-28 FR FR7612595A patent/FR2309953A1/fr active Granted
-
1981
- 1981-12-31 MY MY1981312A patent/MY8100312A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US4103345A (en) | 1978-07-25 |
| DE2618760A1 (de) | 1976-11-04 |
| DE2618760C3 (de) | 1978-11-30 |
| FR2309953B1 (enExample) | 1981-12-04 |
| FR2309953A1 (fr) | 1976-11-26 |
| MY8100312A (en) | 1981-12-31 |
| DE2618760B2 (de) | 1978-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19960427 |