DE2613096A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE2613096A1
DE2613096A1 DE19762613096 DE2613096A DE2613096A1 DE 2613096 A1 DE2613096 A1 DE 2613096A1 DE 19762613096 DE19762613096 DE 19762613096 DE 2613096 A DE2613096 A DE 2613096A DE 2613096 A1 DE2613096 A1 DE 2613096A1
Authority
DE
Germany
Prior art keywords
layer
silicon oxide
insulating layer
semiconductor
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19762613096
Other languages
German (de)
English (en)
Inventor
Franklyn C Blaha
James R Cricchi
Michael D Fitzpatrick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE2613096A1 publication Critical patent/DE2613096A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
DE19762613096 1975-03-28 1976-03-26 Halbleiteranordnung Pending DE2613096A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56342375A 1975-03-28 1975-03-28

Publications (1)

Publication Number Publication Date
DE2613096A1 true DE2613096A1 (de) 1976-10-14

Family

ID=24250436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762613096 Pending DE2613096A1 (de) 1975-03-28 1976-03-26 Halbleiteranordnung

Country Status (4)

Country Link
US (1) US4148049A (https=)
JP (1) JPS51121274A (https=)
DE (1) DE2613096A1 (https=)
FR (1) FR2305855A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916425B2 (ja) * 1975-12-25 1984-04-16 松下電子工業株式会社 フキハツセイメモリソシ
US4249191A (en) * 1978-04-21 1981-02-03 Mcdonnell Douglas Corporation Stripped nitride structure and process therefor
US4268328A (en) * 1978-04-21 1981-05-19 Mcdonnell Douglas Corporation Stripped nitride MOS/MNOS process
US4330930A (en) * 1980-02-12 1982-05-25 General Instrument Corp. Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process
US4903094A (en) * 1986-08-26 1990-02-20 General Electric Company Memory cell structure having radiation hardness
US5781882A (en) * 1995-09-14 1998-07-14 Motorola, Inc. Very low bit rate voice messaging system using asymmetric voice compression processing
US7382043B2 (en) * 2002-09-25 2008-06-03 Maxwell Technologies, Inc. Method and apparatus for shielding an integrated circuit from radiation
US7191516B2 (en) * 2003-07-16 2007-03-20 Maxwell Technologies, Inc. Method for shielding integrated circuit devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836894A (en) * 1974-01-22 1974-09-17 Westinghouse Electric Corp Mnos/sos random access memory

Also Published As

Publication number Publication date
JPS51121274A (en) 1976-10-23
FR2305855A1 (fr) 1976-10-22
US4148049A (en) 1979-04-03
FR2305855B3 (https=) 1978-11-10

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